AUGER RECOMBINATION RATE IN INGAASP LASERSBURT MG.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 19; PP. 806-807; BIBL. 12 REF.Article

ESTIMATION OF SECOND-ORDER AUGER RECOMBINATION IN LEAD CHALCOGENIDESZIEP O.1983; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1983; VOL. 115; NO 1; PP. 161-170; ABS. GER; BIBL. 20 REF.Article

THE EQUIVALENCE OF TWO RECENT AUGER RECOMBINATION RATE CALCULATIONSROBBINS DJ; YOUNG A.1980; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1980; VOL. 102; NO 2; PP. K143-K147; BIBL. 5 REF.Article

RECOMBINAISON AUGER DANS LE GERMANIUMAKULINICHEV VV.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 6; PP. 1197-1200; BIBL. 7 REF.Article

MEASUREMENT OF RADIATIVE AND AUGER RECOMBINATION RATES IN P-TYPE INGAASP DIODE LASERSSU CB; SCHLAFER J; MANNING J et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 4; PP. 595-596; BIBL. 6 REF.Article

BAND-TO-BAND AUGER EFFECT IN GASB AND INAS LASERSSUGIMURA A.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 8; PP. 4405-4411; BIBL. 33 REF.Article

RECOMBINAISON AUGER DANS SI AUX BASSES TEMPERATURESDELIMOVA LA.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 7; PP. 1349-1352; BIBL. 19 REF.Article

PHOTOCONDUCTIVITE DU MONOSELENIURE D'INDIUM AUX NIVEAUX D'EXCITATION OPTIQUE ELEVESABDULLAEV GB; TAGIROV VI; KYAZYM ZADE AG et al.1980; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1980; VOL. 14; NO 11; PP. 2228-2232; BIBL. 8 REF.Article

IMPACT IONIZATION BY ELECTRIC FIELDS IN INTRINSIC INDIUM-ANTIMONIDE.BRUHNS H; HUBNER K.1977; Z. PHYS. B; DTSCH.; DA. 1977; VOL. 26; NO 3; PP. 227-232; BIBL. 11 REF.Article

THEORY OF INTRINSIC RECOMBINATION AT ZERO TEMPERATURE IN SMALL GAP SEMICONDUCTORS. ESTIMATIONS FOR PBSSEMOCKER M; BEILER M.1983; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1983; VOL. 116; NO 1; PP. 205-215; ABS. GER; BIBL. 13 REF.Article

ETUDE DE LA RECOMBINAISON AUGER DES STRUCTURES A COUCHES MULTIPLES EN SILICIUM POUR UNE DENSITE DE COURANT ELEVEEKUZ'MIN VA; MNATSAKANOV TT; POMORTSEVA LI et al.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 6; PP. 988-992; BIBL. 18 REF.Article

IMPACT IONISATION AND AUGER RECOMBINATION INVOLVING TRAPS IN SEMICONDUCTORSROBBINS DJ; LANDSBERG PT.1980; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1980; VOL. 13; NO 12; PP. 2425-2439; BIBL. 48 REF.Article

ETUDE DES VARIATIONS THERMIQUES DE LA DUREE DE VIE LINEAIRE, DU RENDEMENT D'EMETTEUR ET DU COEFFICIENT DE RECOMBINAISON AUGER D'APRES LA DUREE DU PROCESSUS TRANSITOIRE DE COMMUTATION D'UNE DIODE AU SILICIUMGREKHOV IV; KOROBKOV NN; OTBLESK AE et al.1978; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1978; VOL. 12; NO 2; PP. 319-324; BIBL. 23 REF.Article

RECOMBINAISON AUGER DANS LE SILICIUMABAKUMOV VN; YASSIEVICH IN.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 7; PP. 1302-1310; BIBL. 9 REF.Article

AUGER RECOMBINATION IN PBTE.LISCHKA K; HUBER W.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 6; PP. 2632-2633; BIBL. 10 REF.Article

EFFET PHOTOMAGNETOELECTRIQUE DANS LES SEMICONDUCTEURS FORTEMENT EXCITES DANS LES CONDITIONS DE RECOMBINAISON AUGERTAMASHYAVICHYUS AV; SHATKOVSKIJ EV.1979; LITOV. FIZ. SBOR.; SUN; DA. 1979; VOL. 19; NO 1; PP. 77-83; ABS. LIT/ENG; BIBL. 11 REF.Article

A DIRECT CALCULATION OF OVERLAP INTEGRALS AND THE AUGER RECOMBINATION COEFFICIENT IN GAPDZWIG P.1979; J. PHYS. C; GBR; DA. 1979; VOL. 12; NO 10; PP. 1809-1818; BIBL. 14 REF.Article

Auger recombination in a quantum-well-heterostructure laserTAYLOR, R. I; ABRAM, R. A; BURT, M. G et al.IEE proceedings. Part J. Optoelectronics. 1985, Vol 132, Num 6, pp 364-370, issn 0267-3932Article

Simulation studies of the dynamic behavior of semiconductor lasers with Auger recombinationMING TANG; SHYH WANG.Applied physics letters. 1987, Vol 50, Num 26, pp 1861-1863, issn 0003-6951Article

INFLUENCE DE LA DIFFUSION ELECTRON-ELECTRON ENTRE VALLEES SUR LES TRANSITIONS OPTIQUES DANS LES SEMICONDUCTEURSKYUREGYAN AS.1980; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1980; VOL. 14; NO 3; PP. 428-437; BIBL. 17 REF.Article

RECOMBINATION IN TELLURIUM AT HIGH OPTICAL EXCITATION.GALKIN GN; HERRMANN KH; BOBROVA EA et al.1977; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1977; VOL. 82; NO 1; PP. 237-242; ABS. RUSSE; BIBL. 19 REF.Article

TRANSITION RATES FOR AUGER AND OTHER PROCESSES IN SITUATIONS FAR REMOVED FROM THERMAL EQUILIBRIUMPICKIN W.1980; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1980; VOL. 98; NO 1; PP. 155-164; ABS. GER; BIBL. 13 REF.Article

AUGER RECOMBINATION OF ELECTRON-HOLE DROPS.HAUG A.1978; SOLID STATE COMMUNIC.; G.B.; DA. 1978; VOL. 25; NO 7; PP. 477-479; BIBL. 10 REF.Article

AUGER RECOMBINATION AND JUNCTION RESISTANCE IN LEAD-TIN TELLURIDE.EMTAGE PR.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 6; PP. 2565-2568; BIBL. 7 REF.Article

RECOMBINAISON AUGER NON RADIATIVE D'ELECTRONS SUR TROIS CENTRESKUDYKINA TA; TOLPYGO KB; SHEJNKMAN MK et al.1979; UKRAIN. FIZ. ZH.; UKR; DA. 1979; VOL. 24; NO 6; PP. 809-815; ABS. ENG; BIBL. 24 REF.Article