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Results 1 to 25 of 997

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HEAT FLOW RESISTANCE EVALUATION IN AVALANCHE DIODES.SELLBERG F.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 6; PP. 763-765; BIBL. 6 REF.Article

EVALUATION OF THE DISPERSION RELATION OF THE MISAWA AVALANCHE DIODEHARTH W.1983; AEUE. ARCHIV FUER ELEKTRONIK UND UEBERTRAGUNGSTECHNIK; ISSN 0001-1096; DEU; DA. 1983; VOL. 37; NO 3-4; PP. 135-136; ABS. GER; BIBL. 8 REF.Article

HIGH-POWER SUBNANOSECOND SWITCHGREKHOV IV; KARDO SYSOEV AF; KOSTINA LS et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 12; PP. 422-423Article

PLANAR INP/INGAAS-ADP WITH A GUARDRING FORMED BY CD DIFFUSION THROUGH SIO2IKEDA M; WAKITA K; HATA S et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 2; PP. 61-62; BIBL. 7 REF.Article

NOISE MEASUREMENTS ON PHOTO AVALANCHE DIODESGONG J; VAN VLIET KM; SUTHERLAND AD et al.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 63; NO 2; PP. 445-460; ABS. GER; BIBL. 16 REF.Article

MULTIPLICATEUR DE FREQUENCE A DIODE DE TRANSIT A AVALANCHEVENGER AZ; ERMAK AN; YAKIMENKO AM et al.1980; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1980; NO 3; PP. 138-139; BIBL. 2 REF.Article

FULLY ION-IMPLANTED P+-N GERMANIUM AVALANCHE PHOTODIODESKAGAWA S; KANEDA T; MIKAWA T et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 6; PP. 429-431; BIBL. 9 REF.Article

BRUIT DANS LES PHOTODETECTEURS SILICIUM N+PI PPI P+CHENINI BENZOHRA MOKHTARIA.1981; ; FRA; DA. 1981; 57 P.; 30 CM; BIBL. 29 REF.; TH. 3E CYCLE: BRUIT FOND COMPOSANTS ELECTRON./MONTPELLIER 2/1981/558Thesis

IMPROVED GERMANIUM AVALANCHE PHOTODIODESMIKAMI O; ANDO H; KANBE H et al.1980; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1980; VOL. 16; NO 9; PP. 1002-1007; BIBL. 22 REF.Article

ESTUDO DE NAO-LINEARIDADES EM DIODOS DE AVALANCHA E TEMPO DE TRANSITO = ETUDE DES PROPRIETES NON LINEAIRES DES DIODES A AVALANCHE A TEMPS DE TRANSITPILLON RICHARDS F; BORGES DINIZ A.1980; REV. BRAS. TECHNOL.; ISSN 0370-3835; BRA; DA. 1980; VOL. 11; NO 3; PP. 117-129; ABS. ENG; BIBL. 14 REF.Article

FONCTIONNEMENT D'UNE PHOTODIODE A AVALANCHE EN REGIME D'HETERODYNAGE ELECTRIQUEVOLOD'KO LV; LAVRUKOVICH VI; PIKULIK VG et al.1977; DOKL. AKAD. NAUK, B.S.S.R.; S.S.S.R.; DA. 1977; VOL. 21; NO 5; PP. 414-416; BIBL. 4 REF.Article

AVALANCHE-NOISE DEPENDENCE ON AVALANCHE-PHOTODIODE STRUCTURES.NISHIDA K.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 14; PP. 419-421; BIBL. 6 REF.Article

THE EFFECT OF SIMULATED BULK LEAKAGE ON THE PERFORMANCE OF APD RECEIVERSWHITE CA.sdOPTICAL COMMUNICATION CONFERENCE. EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION. 5/1979/AMSTERDAM; NLD; DA. S.D.; PP. 23.5.1-23.5.5; BIBL. 2 REF.Conference Paper

A NOVEL AVALANCHE OPTO-ISOLATOR.SCHAIRER W; BERCHTOLD K; HUBER D et al.1976; OPT. QUANTUM ELECTRON.; G.B.; DA. 1976; VOL. 8; NO 5; PP. 465-467; BIBL. 2 REF.Article

ELECTRON TRANSPORT IN AVALANCHING GAAS DIODESLANYON HPD.1982; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 4; PP. 101-102; BIBL. 9 REF.Article

ETUDE DE LA SENSIBILITE DE SEUIL DE PHOTODIODES A AVALANCHE AU SILICIUMBLYNSKIJ VI; OSINSKIJ VI.1980; VESCI AKAD. NAVUK BSSR, SER. FIZ.-TEH. NAVUK; ISSN 0002-3566; BYS; DA. 1980; NO 3; PP. 98-101; ABS. ENG; BIBL. 9 REF.Article

A BROAD-BAND OPTOELECTRONIC MICROWAVE SWITCHHARA EH; MACDONALD RI.1980; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; USA; DA. 1980; VOL. 28; NO 6; PP. 662-665; BIBL. 8 REF.Article

A LOW-NOISE N+NP GERMANIUM AVALANCHE PHOTODIODEMIKAWA T; KAGAWA S; KANEDA T et al.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 2; PP. 210-216; BIBL. 15 REF.Article

HIGH FREQUENCY NOISE PROPERTIES OF A DOUBLE AVALANCHE REGION (DAR) IMPATT DIODEDATTA DN; PAL BB.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 4; PP. 377-382; BIBL. 7 REF.Article

EINFLUB DER DIFFUSION AUF LAWINENDIODEN = INFLUENCE DE LA DIFFUSION SUR LES DIODES A AVALANCHEPOETZL HW; THIM HW; SCHAWARZ RI et al.1978; ARCH. ELEKTRON. UBERTRAG.-TECH.; DEU; DA. 1978; VOL. 32; NO 5-6; PP. 229-234; ABS. ENG; BIBL. 9 REF.Article

METHODE DE DETERMINATION, SANS ETALON, DES PARAMETRES DU SCHEMA EQUIVALENT DU BOITIER D'UNE DIODE DE TRANSIT A AVALANCHEKUZNETSOV OV.1978; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; UKR; DA. 1978; VOL. 21; NO 9; PP. 106-108; BIBL. 6 REF.Article

ANALYSE DU MECANISME DE SENSIBILITE FREQUENTIELLE DE MODULATION D'UN GENERATEUR A DIODE DE TRANSIT A AVALANCHEBUGAEV AV.1982; RADIOTEH. ELEKTRON.; ISSN 508322; SUN; DA. 1982; VOL. 27; NO 6; PP. 1186-1188; BIBL. 8 REF.Article

RECHNERGSTUETZTE UNTERSUCHUNG VON LAWINENDIODEN = ETUDE SUR ORDINATEUR DES DIODES A AVALANCHEWETSPHAL K.1978; NACHR.-TECH., ELEKTRON.; DDR; DA. 1978; VOL. 28; NO 12; PP. 494-498; BIBL. 15 REF.Article

AVALANCHE BREAKDOWN AS A NONLINEAR WAVE.AGU M; KINOSHITA T.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; NO 5; PP. 835-839; BIBL. 6 REF.Article

IMPACT IONIZATION IN (100)-, AND (111)-ORIENTED INP AVALANCHE PHOTODIODESARMIENTO CA; GROVES SH.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 43; NO 2; PP. 198-200; BIBL. 25 REF.Article

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