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AVALANCHE BREAKDOWN VOLTAGE OF A MICROWAVE PIN DIODE.RATNAKUMAR KN.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 7; PP. 655-656; BIBL. 3 REF.Article

ELECTRONIC SWITCHING IN PYRANTHRONE THIN FILM.SAKAI Y; SADAOKA Y.1975; CHEM. LETTERS; JAP.; DA. 1975; NO 5; PP. 455-458; BIBL. 8 REF.Article

ETUDE DES DOMAINES LOCAUX DE CHARGE NEGATIVE DANS LE SYSTEME MOSSHIRSHOV YU M; FROLOV OS; GAL'KA IM et al.1974; MIKROELEKTRONIKA; S.S.S.R.; DA. 1974; VOL. 3; NO 4; PP. 332-336; BIBL. 8 REF.Article

SECOND BREAKDOWN OF TRANSITRORS DURING INDUCTIVE TURNOFFKRISHNA S; HOWER PL.1973; PROC. I.E.E.E.; U.S.A.; DA. 1973; VOL. 61; NO 3; PP. 393-395; BIBL. 2 REF.Serial Issue

PROPRIETES D'AVALANCHE DE TRANSISTORS PLANARS EPITAXIAUX DE FAIBLE PUISSANCEKOPYL GF; KARPLYUK AI; MUSHCHENKO VA et al.1973; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1973; NO 11; PP. 63-66; BIBL. 3 REF.Serial Issue

ANALYTICAL SOLUTIONS FOR AVALANCHE-BREAKDOWN VOLTAGES OF SINGLE-DIFFUSED GAUSSIAN JUNCTIONSSHENAI K; LIN HC.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 3; PP. 211-216; BIBL. 11 REF.Article

CURRENT MULTIPLICATION RATE AT THE PERIPHERIES OF BURIED JUNCTIONS.TAKUMIYA S; KONDO A; SHIRAHATA K et al.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 4; PP. 743-744; BIBL. 4 REF.Article

SUR LA THEORIE DES PHENOMENES MICROPLASMIQUES DANS LES JONCTIONS P-NALADINSKIJ VK.1972; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1972; VOL. 6; NO 10; PP. 2034-2041; BIBL. 14 REF.Serial Issue

INVESTIGATION ON THE PULSE-HEIGHT DISTRIBUTION OF ELECTRON AVALANCHES GENERATED BY THERMIONICALLY EMITTED ELECTRONS IN A PROPORTIONAL COUNTERCHATTERJEE SD; SASTRI RC; DHARA M et al.1978; INDIAN J. PHYS., A; IND; DA. 1978; VOL. 52; NO 2; PP. 100-113; BIBL. 21 REF.Article

PREDICTION OF AVALANCHE BREAKDOWN VOLTAGE IN SILICON STEP JUNCTIONS.NUTTALL KI; NIELD MW.1974; INTERNATION. J. ELECTRON.; G.B.; DA. 1974; VOL. 37; NO 3; PP. 295-309; BIBL. 19 REF.Article

REFLEXIONS SUR LES STRUCTURES HYPERFREQUENCES A PROFILS CONTROLES.MARIN BH.1974; ELECTR. ELECTRON. MOD., INDUSTR.; FR.; DA. 1974; VOL. 44; NO 280; PP. 57-63Article

ETUDE DU PROCESSUS DE VARIATION DU TYPE DU CLAQUAGE D'AVALANCHE A CELUI DE MESOPLASMA DANS LES JONCTIONS P-N DE SILICIUMPENTYUSH EH V; DEKENA EH K; PURITIS T YA et al.1974; LATV. P.S.R. ZINAT. AKAD. VEST., FIZ. TEH. ZINAT. SER.; S.S.S.R.; DA. 1974; NO 5; PP. 48-57; ABS. ANGL.; BIBL. 15 REF.Article

DIE ENTSTEHUNG UND AUSKOPPLUNG ELEKTROMAGNETISCHER IMPULSE IN KERNSTRAHLUNGSDETEKTOREN MIT LAWINENBILDUNG = FORMATION ET DECLENCHEMENT D'IMPULSIONS ELECTROMAGNETIQUES DANS LES DETECTEURS DE RAYONNEMENTS AVEC FORMATION D'AVALANCHESMICHEL HS.1972; ISOTOPENPRAXIS; DTSCH.; DA. 1972; VOL. 8; NO 7; PP. 244-248; ABS. ANGL. RUSSE; BIBL. 8 REF.Serial Issue

MULTIPLICATION ELECTRONIQUE DANS UN GAZ SOUMIS A UN CHAMP ELECTRIQUE UNIFORMECHATELLARD P; MAUREL J; VIDAL G et al.1971; J. PHYS., COLLOQ.; FR.; DA. 1971; VOL. 32; NO 10; PP. 156-158; ABS. ANGL.; BIBL. 5 REF.; (COLLOQ. SOC. FR. PHYS.; EVIAN; 1971)Conference Paper

LES PHENOMENES DE CLAQUAGE DANS LES SEMI-CONDUCTEURS.HERNANDEZ D.1975; CENTRE NATION. ET. SPATIALES, NOTE TECH.; FR.; DA. 1975; NO 23; PP. 1-26; ABS. ANGL.; BIBL. 8 REF.Serial Issue

VARIATION EN FONCTION DE LA FREQUENCE ET DE LA TEMPERATURE DE L'IONISATION PAR AVALANCHE DANS LES CORPS SOLIDES SOUS L'ACTION D'UN CHAMP ELECTROMAGNETIQUEEPIFANOV AS; MANENKOV AA; PROKHOROV AM et al.1975; PIS'MA ZH. EKSPER. TEOR. FIZ.; S.S.S.R.; DA. 1975; VOL. 21; NO 8; PP. 483-486; BIBL. 8 REF.Article

MICROSCOPIC EVOLUTION OF THE IONIZING COLLISION FREQUENCY IN TOWNSEND AVALANCHES.VIDAL G; LACAZE J; MAUREL J et al.1974; J. PHYS. D; G.B.; DA. 1974; VOL. 7; NO 12; PP. 1684-1698; BIBL. 16 REF.Article

AVALANCHE SWITCHING IN JUNCTION TRANSISTORS.CHATURVEDI PK.1974; J. INSTIT. ELECTRON. TELECOMMUNIC. ENGRS; INDIA; DA. 1974; VOL. 20; NO 5; PP. 198-202; BIBL. 10 REF.Article

ON THE AVALANCHE INITIATION PROBABILITY OF AVALANCHE DIODES ABOVE THE BREAKDOWN VOLTAGE = SUR LA PROBABILITE D'AMORCAGE D'AVALANCHES DANS DES DIODES A AVALANCHE, AU-DESSUS DE LA TENSION DE CLAQUAGEMCINTYRE RJ.1973; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 7; PP. 637-641; BIBL. 19 REF.Serial Issue

SUBSURFACE BREAKDOWN DEVICE RELIABILITYMAR J.1973; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 3; PP. 330-331; BIBL. 4 REF.Serial Issue

TRIGGERING PHENOMENA IN AVALANCHE DIODESOLDHAM WG; SAMUELSON RR; ANTOGNETTI P et al.1972; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1972; VOL. 19; NO 9; PP. 1056-1060; BIBL. 19 REF.Serial Issue

ANALYSE DES MECANISMES DE FORMATION DU STREAMERBAYLE P; SCHMIED H.1972; CERN-72-9; SUISSE; DA. 1972; PP. (34 P.); BIBL. 21 REF.Report

ON THE TIME DEPENDENCY OF THE AVALANCHE PROCESS IN SEMICONDUCTORS.WALMA AA; HACKAM R.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 6; PP. 511-517; BIBL. 10 REF.Article

EFFET D'UN MICROCLAQUAGE D'AVALANCHE DANS LA ZONE DE CHARGE D'ESPACE DE CONDENSATEURS MDSDENISYUK VA; ZAKHAROV VP; POPOV VM et al.1975; MIKROELEKTRONIKA; S.S.S.R.; DA. 1975; VOL. 4; NO 1; PP. 47-49; BIBL. 6 REF.Article

BIPOLAR TRANSISTOR MODELING OF AVALANCHE GENERATION FOR COMPUTER CIRCUIT SIMULATION.DUTTON RW.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 6; PP. 334-338; BIBL. 11 REF.Article

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