Direct measurement of the electric-field-dependent absorption coefficient in GaAs/AlGaAs multiple quantum wellsWOOD, T. H.Applied physics letters. 1986, Vol 48, Num 21, pp 1413-1415, issn 0003-6951Article

Electroluminescence and avalanche multiplication at electric field strength exceeding 1 MV/cm in hydrogenated amorphous SiC alloyTOYAMA, T; MATSUI, T; HIRATSUKA, K et al.Japanese journal of applied physics. 1996, Vol 35, Num 12A, pp 5975-5979, issn 0021-4922, 1Article

Electro-optic, piezoelectric, and dielectric properties of zinc tris thiourea sulfateRAMABADRAN, U. B; ZELMON, D. .E; KENNEDY, G. C et al.Applied physics letters. 1992, Vol 60, Num 21, pp 2589-2591, issn 0003-6951Article

Absorption de la lumière dans les couches quantiques et les superréseaux en semiconducteurs en présence de champs électriques intensesORLOV, L. K.Fizika i tehnika poluprovodnikov. 1987, Vol 21, Num 4, pp 710-717, issn 0015-3222Article

Influence du déplacement de Gus-Henken sur la valeur des pertes dans les modulateurs à guide d'onde à absorption électriqueSUKHOTIN, S. A; GOLUBEV, V. V.Žurnal tehničeskoj fiziki. 1987, Vol 57, Num 9, pp 1776-1781, issn 0044-4642Article

New coherent detector for terahertz radiation based on excitonic electroabsorptionSHA, W; NORRIS, T. B; BURM, J. W et al.Applied physics letters. 1992, Vol 61, Num 15, pp 1763-1765, issn 0003-6951Article

Influence of the temperature-dependent spontaneous birefringence in the electro-optic measurements of LiNbO₃AILLERIE, M; FONTANA, M. D; ABDI, F et al.Journal of applied physics. 1989, Vol 65, Num 6, pp 2406-2408, issn 0021-8979Article

Intersubband optical absorption in a quantum well with an applied electric fieldAHN, D; CHUANG, S. L.Physical review. B, Condensed matter. 1987, Vol 35, Num 8, pp 4149-4151, issn 0163-1829Article

Electroabsorption of cetylthiotetrathiafulvalene / fluoro-containing 7,7,8,8-tetracyanoquinodimethane systems in Langmuir-Blodgett filmsNAKAMURA, T; AZUMI, R; TACHIBANA, H et al.Synthetic metals. 1997, Vol 86, Num 1-3, pp 1819-1820, issn 0379-6779Conference Paper

Conduction mechanisms in undoped thin films of C₆₀ and C_60/70PALOHEIMO, J; ISOTALO, H; KASTNER, J et al.Synthetic metals. 1993, Vol 56, Num 2-3, pp 3185-3190, issn 0379-6779Conference Paper

Electroabsorption in an InGaAs/GaAs strained-layer multiple quantum well structureVAN ECK, T. E; CHU, P; CHANG, W. S. C et al.Applied physics letters. 1986, Vol 49, Num 3, pp 135-136, issn 0003-6951Article

Temperature-dependent delay time in GaAs high-power high-speed photoconductive switching devicesZU, L. Q; LU, Y; SHEN, H et al.IEEE photonics technology letters. 1995, Vol 7, Num 1, pp 56-58, issn 1041-1135Article

Quantum unconfined Stark effects in a GaAs single quantum well : an optical-constant modelJIN WANG; LEBURTON, J. P; HERZINGER, C. M et al.Physical review. B, Condensed matter. 1993, Vol 47, Num 8, pp 4783-4785, issn 0163-1829Article

Comparison of the limits in performance of multiple quantum well and Franz-Keldysh InGaAs/InP electroabsorption modulatorsTIPPING, A. K; PARRY, G; CLAXTON, P et al.IEE proceedings. Part J. Optoelectronics. 1989, Vol 136, Num 4, pp 205-208, issn 0267-3932Article

Improved electrochromic performance of iridium-oxide films prepared by thermal oxidation of iridium-carbon composite filmsSATO, Y.Journal of applied physics. 1989, Vol 66, Num 4, pp 1810-1815, issn 0021-8979Article

Anomalous applied voltage dependence of the switching time in a ferroelectric liquid crystal with negative dielectric anisotropyNAKAMURA, K; ORIHARA, H; ISHIBASHI, Y et al.Japanese journal of applied physics. 1988, Vol 27, Num 5, pp 705-709, issn 0021-4922, 1Article

Electroabsorption of highly confined systems: theory of the quantum-confined Franz-Keldysh effect in semiconductor quantum wires and dotsMILLER, D. A. B; CHEMLA, D. S; SCHMITT-RINK, S et al.Applied physics letters. 1988, Vol 52, Num 25, pp 2154-2156, issn 0003-6951Article

Semiconductor waveguide phase comparatorLIN, S. C; CHIN, M. K; JING, X. L et al.Applied physics letters. 1988, Vol 53, Num 14, pp 1297-1298, issn 0003-6951Article

Effet Stark dans la bande U et effet Jahn-Teller dans l'état 4T2 excité de l'ion Cr3+ dans le rubisVIKHNIN, V. S; SKVORTSOV, A. P; TIKOMIROV, V. K et al.Fizika tverdogo tela. 1988, Vol 30, Num 7, pp 2058-2065, issn 0367-3294Article

Experimental determination of electroabsorption in GaAs/Al_0.32Ga_0.68As multiple quantum well structures as function of well widthJELLEY, K. W; ALAVI, K; ENGELMANN, R. W. H et al.Electronics Letters. 1988, Vol 24, Num 25, pp 1555-1557, issn 0013-5194Article

Exciton electroabsorption at room temperature in InGaAs/InP multiquantum-well structures grown by atmospheric-pressure MOCVDMOSELEY, A. J; SCOTT, M. D; WILLIAMS, P. J et al.Electronics Letters. 1987, Vol 23, Num 10, pp 516-518, issn 0013-5194Article

High-speed waveguide optical modulator made from GaSb/AlGaSb multiple quantum wells (MQWs)WOOD, T. H; CARR, E. C; BURRUS, C. A et al.Electronics Letters. 1987, Vol 23, Num 10, pp 540-542, issn 0013-5194Article

Multiphoton interband absorption of light in semiconductors in external parallel electric and magnetic fieldsKATANA, P. K.Physica status solidi. B. Basic research. 1986, Vol 134, Num 1, pp 195-201, issn 0370-1972Article

Optical characterization of merocyanine Langmuir-Blodgett layersNISHIKAWA, S; TOKURA, Y; KODA, T et al.Japanese journal of applied physics. 1986, Vol 25, Num 9, pp L701-L703, issn 0021-4922, 2Article

Effet Franz-Keldysch dans les semiconducteurs dans le champ de deux ondes lumineuses intenses en interactionMONOZON, B. S; IGNAT'EVA, L. A.Fizika i tehnika poluprovodnikov. 1986, Vol 20, Num 8, pp 1492-1495, issn 0015-3222Article