Influence des résonances magnétiques d'impuretés sur la photoconductivité de Ge-pSHOVKUN, D. V.Fizika i tehnika poluprovodnikov. 1988, Vol 22, Num 9, pp 1569-1573, issn 0015-3222Article

Effect of iron impurities on the electrical proprerties of GaSe single crystalsTAGIYEV, B. G; NIFTIYEV, G. M; BASHIROV, S. M et al.Solid state communications. 1984, Vol 51, Num 11, pp 893-896, issn 0038-1098Article

Hot photoluminescence in beryllium-doped gallium arsenideIMHOFF, E. A; BELL, M. I; FORMAN, R. A et al.Solid state communications. 1985, Vol 54, Num 10, pp 845-848, issn 0038-1098Article

Unusual conformations of 1,3-dialkoxythiacalix[4]arenes in the solid stateKASYAN, Oleg; THONDORF, Iris; BOLTE, Michael et al.Acta crystallographica. Section C, Crystal structure communications. 2006, Vol 62, issn 0108-2701, o289-o294, 5Article

Effect of occupational sites of rare-earth elements on the Curie point in BaTiO₃KISHI, H; KOHZU, N; OZAKI, N et al.Proceedings - IEEE International Symposium on Applications of Ferroelectrics. 2002, pp 271-276, issn 1099-4734, isbn 0-7803-7414-2, 6 p.Conference Paper

Déplacement polaronique dans la théorie des accepteurs à niveau peu profond dans les semiconducteurs à bande dégénéréeGIFEJSMAN, SH. N; KOROPCHANU, V. P.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 10, pp 1853-1855, issn 0015-3222Article

Atomic deuterium passivation of boron acceptor levels in silicon crystalsMIKKELSEN, J. C. JR.Applied physics letters. 1985, Vol 46, Num 9, pp 882-884, issn 0003-6951Article

Mixed dicationic and monocationic benzidine species in the proton-transfer compound of benzidine with 3,5-dinitrosalicylic acidSMITH, Graham; WERMUTH, Urs D; WHITE, Jonathan M et al.Acta crystallographica. Section C, Crystal structure communications. 2006, Vol 62, issn 0108-2701, o402-o404, 7Article

Contact charging of ideal insulators: experiments on solidified rare gasesCOTTRELL, G. A; HATTO, C. E; REEDS, C et al.Journal of physics. D, Applied physics (Print). 1984, Vol 17, Num 5, pp 989-1005, issn 0022-3727Article

Spherical model of acceptor-associated bound magnetic polaronsWARNOCK, J; WOLFF, P. A.Physical review. B, Condensed matter. 1985, Vol 31, Num 10, pp 6579-6587, issn 0163-1829Article

Méthode des intégrales sur les trajectoires dans la théorie des bandes dégénéréesGIFEJSMAN, SH. N; PERLIN, YU. E.Fizika tverdogo tela. 1984, Vol 26, Num 9, pp 2760-2766, issn 0367-3294Article

Influence of deformations on the behavior of negative muon polarisation in the μAl acceptor center in longitudinal magnetic fieldBATURIN, A. S; GORELKIN, V. N.Physica. B, Condensed matter. 2003, Vol 334, Num 1-2, pp 44-48, issn 0921-4526, 5 p.Article

Base sequence dependence of charge transport via short DNA bridgesMATULEWSKI, J; BARANOVSKII, S. D; THOMAS, P et al.Physica status solidi. B. Basic research. 2004, Vol 241, Num 10, pp R46-R48, issn 0370-1972Article

Manganese luminescence in AlGaAs-alloys and AlGaAs/GaAs quantum wellsBANTIEN, F; WEBER, J.Solid state communications. 1987, Vol 61, Num 7, pp 423-426, issn 0038-1098Article

EPR studies of heat-teatment centers in p-type siliconGREGORKIEWICZ, T; VAN WEZEP, D. A; BEKMAN, H. H. P. T et al.Physical review. B, Condensed matter. 1987, Vol 35, Num 8, pp 3810-3817, issn 0163-1829Article

Low-temperature photoluminescence properties of high-quality GaAs layers grown by molecular-beam epitaxyRAO, E. V. K; ALEXANDRE, F; MASSON, J. M et al.Journal of applied physics. 1985, Vol 57, Num 2, pp 503-508, issn 0021-8979Article

The doping concentration dependence of the zinc acceptor ionization energy in In_0.49 Ga_0.51 PCHANG, C. Y; WU, M. C; SU, Y. K et al.Journal of applied physics. 1985, Vol 58, Num 10, pp 3907-3908, issn 0021-8979Article

Régime de relaxation non monotone avec un modèle de corrélation de la recombinaisonVERNER, I. V; KOPAEV, YU. V; KORNYAKOV, N. V et al.Fizika tverdogo tela. 1984, Vol 26, Num 8, pp 2377-2380, issn 0367-3294Article

Additional structure in infrared excitation spectra of group-III acceptors in siliconFISCHER, D. W; ROME, J. J.Physical review. B, Condensed matter. 1983, Vol 27, Num 8, pp 4826-4832, issn 0163-1829Article

Observation d'un effondrement photoélectrique sur les accepteurs excités dans le germaniumBOCHARNIKOV, V. I; GODIK, EH. EH; PETROV, A. V et al.Pis′ma v žurnal èksperimental′noj i teoretičeskoj fiziki. 1983, Vol 37, Num 6, pp 259-261, issn 0370-274XArticle

The mobility of a nickel-related centre in reverse biased germanium n+p diodesPEARTON, S. J; TAVENDALE, A. J.Solid-state electronics. 1983, Vol 26, Num 10, pp 1019-1021, issn 0038-1101Article

Host-guest interaction in a thioureadimethyl oxalate (2/1) complex at 300 and 100 KCHITRA, R; ROUSSEL, Pascal; CHOUDHURY, R. R et al.Acta crystallographica. Section C, Crystal structure communications. 2006, Vol 62, issn 0108-2701, o547-o549, 9Article

Quantification quasi classique des niveaux d'un accepteur dans les semi-conducteurs du type GeGEL'MONT, B. L; MIRLIN, A. D; PEREL, V. I et al.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 6, pp 1052-1057, issn 0015-3222Article

Photoluminescence studies of the neutralization of acceptors in silicon by atomic hydrogenTHEWALT, M. L. W; LIGHTOWLERS, E. C; PANKOVE, J. I et al.Applied physics letters. 1985, Vol 46, Num 7, pp 689-691, issn 0003-6951Article

Variational calculation of multihole binding energies in hydrogenic impurity centers in semiconductorsYAN WU; FALICOV, L. M.Physical review. B, Condensed matter. 1984, Vol 29, Num 6, pp 3671-3672, issn 0163-1829Article