Evaporation of oxygen-bearing species from Si melt and influence of Sb additionXIMING HUANG; TERASHIMA, K; SASAKI, H et al.Japanese journal of applied physics. 1994, Vol 33, Num 4A, pp 1717-1722, issn 0021-4922, 1Article

Ètude, réalisation, et métrologie de photodétecteurs infrarouge à bande d'impuretés bloquée à base de silicium dope antimoine = Study, realisation, and metrology of infrared blocked impurity band photoconductors based on antimony doped siliconSirmain, Gilles; Leotin, J.1994, 125 p.Thesis

Dielectric spectroscopy of nanoparticulate semiconductors in thin filmsTEXTER, J; LELENTAL, M.Journal of materials science letters. 1999, Vol 18, Num 10, pp 775-778, issn 0261-8028Article

Raman spectroscopy of surface phonons on Sb-terminated Si(001)HINRICHS, K; POWER, J. R; ESSER, N et al.Applied surface science. 2000, Vol 166, pp 185-189, issn 0169-4332Conference Paper

Electrical properties of Sb-doped PZT films deposited by d.c. reactive sputtering using multi-targetsCHOI, W.-Y; AHN, J.-H; LEE, W.-J et al.Materials letters (General ed.). 1998, Vol 37, Num 3, pp 119-127, issn 0167-577XArticle

Photoconductivité de structures au silicium à Bande d'Impuretés Bloquée = Photoconductivity of Blocked Impurity Band structures of siliconPasquier Puech, Sabine; Leotin, J.1996, 175 p.Thesis

Silicon homoepitaxy on high index surfaces and the effect of antimony on this growthLADEVEZE, M; BERBEZIER, I; ARNAUD D'AVITAYA, F et al.Surface science. 1996, Vol 352-54, pp 797-801, issn 0039-6028Conference Paper

Evaluation of evaporated species from silicon melt surface during Sb-doped Czochralski silicon crystal growthIZUNOME, K; XINMING HUANG; TERASHIMA, K et al.Japanese journal of applied physics. 1995, Vol 34, Num 12B, pp L1635-L1637, issn 0021-4922, 2Article

Analysis of P and Sb diffusion during thermal oxidation in siliconOKINO, T; ONISHI, M.Japanese journal of applied physics. 1994, Vol 33, Num 6A, pp 3362-3367, issn 0021-4922, 1Article

Variation of conductivity and activation energy in metal-doped and undoped C₆₀ films under oxygen exposureFUJIMORI, S; HOSHIMONO, K; FUJITA, S et al.FUJITA, S et al.Solid state communications. 1994, Vol 89, Num 5, pp 437-440, issn 0038-1098Article

The stress dependence of the change in sound velocity in Sb-doped GeUMEBAYASHI, T; SUZUKI, K.Journal of physics. Condensed matter (Print). 1993, Vol 5, Num 41, pp 7623-7632, issn 0953-8984Article

Surface segregation of antimony in Fe-Si steel for grain oriented sheetsJENKO, M; VODOPIVEC, F; PRACEK, B et al.Applied surface science. 1993, Vol 70-71, Num 1-4, pp 118-122, issn 0169-4332, AConference Paper

Novel Sb³⁺/Eu³⁺ Co-doped phosphate luminescent glasses with adjustable emissionQING YU; HUIDAN ZENG; ZHAO LIU et al.Journal of alloys and compounds. 2014, Vol 590, pp 92-95, issn 0925-8388, 4 p.Article

Assessment on thermoelectric power factor in silicon nanowire networksLOHN, Andrew J; COLEMAN, Elane; TOMPA, Gary S et al.Physica status solidi. A, Applications and materials science (Print). 2012, Vol 209, Num 1, pp 171-175, issn 1862-6300, 5 p.Article

Structural modification of Ge-Se amorphous films with the addition of SbGANJOO, A; JAIN, H; KHALID, S et al.Philosophical magazine letters. 2005, Vol 85, Num 10, pp 503-512, issn 0950-0839, 10 p.Article

Optical properties of silver ion-exchanged antimony doped glassPAJE, S. E; GARCIA, M. A; VILLEGAS, M. A et al.Journal of non-crystalline solids. 2000, Vol 278, Num 1-3, pp 128-136, issn 0022-3093Article

The electrical and optical properties of thin layers of nano-sized antimony doped tinoxide particlesVAN BOMMEL, M. J; GROEN, W. A; VAN HAL, H. A. M et al.Journal of materials science. 1999, Vol 34, Num 19, pp 4803-4809, issn 0022-2461Article

The effect of Sb on the nucleation and growth of Ag on Ag(100)VAN DER VEGT, H. A; HUISMAN, W. J; HOWES, P. B et al.Surface science. 1995, Vol 330, Num 2, pp 101-112, issn 0039-6028Article

Annealing and Sb-doping of Sn-O films produced by filtered vacuum arc deposition : structure and electro-optical propertiesKAPLAN, L; BEN-SHALOM, A; BOXMAN, R. L et al.Thin solid films. 1994, Vol 253, Num 1-2, pp 1-8, issn 0040-6090Conference Paper

Occupied and unoccupied surface states on the single-domain Si(100):Sb-2×1 surfaceCRICENTI, A; BERNHOFF, H; REIHL, B et al.Physical review. B, Condensed matter. 1993, Vol 48, Num 15, pp 10983-10986, issn 0163-1829Article

On the theory of enhanced diffusion in high-temperature antimony-implanted siliconANTONCIK, E.Radiation effects and defects in solids. 1993, Vol 127, Num 1, pp 75-82, issn 1042-0150Article

Influence of antimony doping on structure and conductivity of tin oxide whiskersZHUKOVA, A. A; RUMYANTSEVA, M. N; ABAKUMOV, A. M et al.Thin solid films. 2010, Vol 518, Num 4, pp 1359-1362, issn 0040-6090, 4 p.Conference Paper

Antimony as substitute for arsenic to eliminate enhanced diffusion effectsRÜCKER, H; HEINEMANN, B; BARTH, R et al.ESSCIRC 2002 : European solid-state circuits conferenceEuropean solid-state device research conference. 2002, pp 199-202, isbn 88-900847-8-2, 4 p.Conference Paper

Study of morphological instability during crystal growth using AHP methodMARCHENKO, M; FRJAZINOV, I; GOLYSHEV, V et al.International heat transfer conference. 2002, pp 321-326, isbn 2-84299-308-X, 6 p.Conference Paper

A scanning tunneling microscopy study of surface segregation of Sb at a Cu(111) surfaceAUFRAY, B; GIORDANO, H; SEIDMAN, D. N et al.Surface science. 2000, Vol 447, Num 1-3, pp 180-186, issn 0039-6028Article