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Results 1 to 25 of 1715

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Magnetic susceptibility of compensated Si:PMORI, T; SHIMAZU, Y; IKEHATA, S et al.Solid state communications. 1994, Vol 91, Num 1, pp 13-15, issn 0038-1098Article

Corrosion behaviour of sintered 434L ferritic stainless steel-Al2O3 composites containing phosphorus = Comportement à la corrosion des composites acier inoxydable ferritique 434L fritté-Al2O3, contenant du phosphoreMUKHERJEE, S. K; UPADHYAYA, G. S.Corrosion science. 1985, Vol 25, Num 7, pp 463-470, issn 0010-938XArticle

Efficient conversion of lignin into single chemical species by solvothermal reaction in water-p-cresol solventOKUDA, Kazuhide; XIN MAN; UMETSU, Mitsuo et al.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 14, pp S1325-S1330, issn 0953-8984Conference Paper

Observation of substitutional and interstitial phosphorus on clean Si(100)-(2×1) with scanning tunneling microscopyBROWN, Geoffrey W; UBERUAGA, Bias P; GRUBE, Holger et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 19, pp 195323.1-195323.5, issn 1098-0121Article

Oxynitridation-enhanced diffusion of phosphorus in <100> siliconCHEN, N. K; CHIAPYING LEE.Journal of the Electrochemical Society. 1995, Vol 142, Num 6, pp 2051-2054, issn 0013-4651Article

The Effect of Electrostatic Screening on a Nanometer Scale ElectrometerMACLEAN, Kenneth; MENTZEL, Tamar S; KASTNER, Marc A et al.Nano letters (Print). 2011, Vol 11, Num 1, pp 30-34, issn 1530-6984, 5 p.Article

Large positive magnetoresistive effect in silicon induced by the space-charge effectDELMO, Michael P; YAMAMOTO, Shinpei; KASAI, Shinya et al.Nature (London). 2009, Vol 457, Num 7233, pp 1112-1115, issn 0028-0836, 4 p.Article

Cathodoluminescence of phosphorus doped (111) homoepitaxial diamond thin filmsTANABE, K; NAKAZAWA, K; SUSANTYO, J et al.Diamond and related materials. 2001, Vol 10, Num 9-10, pp 1652-1654, issn 0925-9635Conference Paper

Highly efficient metal-free phosphorus-doped platelet ordered mesoporous carbon for electrocatalytic oxygen reductionYANG, Dae-Soo; BHATTACHARJYA, Dhrubajyoti; MIN YOUNG SONG et al.Carbon (New York, NY). 2014, Vol 67, pp 736-743, issn 0008-6223, 8 p.Article

Conduction-band tight-binding description for Si applied to P donorsMARTINS, A. S; BOYKIN, Timothy B; KLIMECK, Gerhard et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 19, pp 193204.1-193204.4, issn 1098-0121Article

Formation of p-n junctions in high-purity germanium by phosphorus ion implantationDEVYATYKH, G. G; VASIL'EV, V. K; GAVVA, V. A et al.Inorganic materials. 1996, Vol 32, Num 12, pp 1258-1261, issn 0020-1685Article

Investigation of micro-segregation in Incoloy 903WANG, A. C; LI, Y. Y; FAN, C. G et al.Materials letters (General ed.). 1994, Vol 19, Num 5-6, pp 251-255, issn 0167-577XArticle

Scanning tunneling microscopy investigation of phosphorus-doped polycrystalline silicon filmsGONZO, L; LUI, A; BISERO, D et al.Materials letters (General ed.). 1993, Vol 18, Num 1-2, pp 50-56, issn 0167-577XArticle

Application of one-bond-type migration to interstitialcy-type self-interstitial and phosphorus in siliconYOSHIDA, M; KAMIURA, Y; TSURUNO, R et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 128-131, issn 0022-0248Conference Paper

Simulation of phosphorus diffusion in silicon using a pair diffusion model with a reduced number of parametersGHADERI, K; HOBLER, G.Journal of the Electrochemical Society. 1995, Vol 142, Num 5, pp 1654-1658, issn 0013-4651Article

n-type CVD diamond doped with phosphorus using the MOCVD technology for dopant incorporationKOCINIEWSKI, T; BARJON, J; SAGUY, C et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 12, pp 3136-3141, issn 1862-6300, 6 p.Conference Paper

Dislocation of high quality P-doped ZnTe substrate examined by X-ray topographyYOSHINO, K; KAKENO, T; YONETA, M et al.Journal of materials science. Materials in electronics. 2005, Vol 16, Num 7, pp 445-448, issn 0957-4522, 4 p.Conference Paper

Field emission characteristics of phosphorus-doped homoepitaxial diamond filmsKIMURA, C; KURIYAMA, K; KOIZUMI, S et al.Applied surface science. 1999, Vol 146, Num 1-4, pp 295-298, issn 0169-4332Conference Paper

Influence of extended defects and native impurities on external gettering in polycrystalline siliconEHRET, E; ALLAIS, V; VALLARD, J.-P et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1995, Vol 34, Num 2-3, pp 210-215, issn 0921-5107Article

The effect of production conditions for in situ phosphorus-doped LPCVD polysilicon in monosilane/phosphine system on the deposition process kineticsTURTSEVICH, A. S; KRASNITSKY, V. Y; EMELYANOV, V. A et al.Thin solid films. 1994, Vol 248, Num 1, pp 28-31, issn 0040-6090Article

Characteristics of the electric capacitance and dielectric loss of the thermal oxide of porous silicon formed using highly phosphorus diffused siliconARITA, Y; KURANARI, K.Japanese journal of applied physics. 1997, Vol 36, Num 3A, pp 1035-1039, issn 0021-4922, 1Article

Modeling of the kinetics of dopant precipitation in siliconDUNHAM, S. T.Journal of the Electrochemical Society. 1995, Vol 142, Num 8, pp 2823-2828, issn 0013-4651Article

Theory of isoconcentration diffusion in semiconductorsANTONCIK, E.Journal of the Electrochemical Society. 1995, Vol 142, Num 9, pp 3170-3173, issn 0013-4651Article

A 3N rule for the electronic properties of doped grapheneZHOU, Ye-Cheng; ZHANG, Hao-Li; DENG, Wei-Qiao et al.Nanotechnology (Bristol. Print). 2013, Vol 24, Num 22, issn 0957-4484, 225705.1-225705.7Article

Phosphorus doping of silicon at substrate temperatures above 600°CTHOMPSON, P. E; JERNIGAN, G. G; SIMONS, D et al.Thin solid films. 2010, Vol 518, issn 0040-6090, S270-S272, SUP1Conference Paper

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