Advanced short-time thermal processing for Si-based CMOS devices (Paris, 27 April - 2 May 2003)Roozeboom, F; Gusev, E.P; Chen, L.J et al.Proceedings - Electrochemical Society. 2003, issn 0161-6374, isbn 1-56677-396-2, XIV, 480 p, isbn 1-56677-396-2Conference Proceedings

Junction scaling for 90 NM and beyondHWANG, Jack; KENNEL, Hal; PACKAN, Paul et al.Proceedings - Electrochemical Society. 2003, pp 35-42, issn 0161-6374, isbn 1-56677-396-2, 8 p.Conference Paper

Silicide scaling: Co, Ni or CoNi?LAUWERS, A; KITTL, J. A; AKHEYAR, A et al.Proceedings - Electrochemical Society. 2003, pp 167-176, issn 0161-6374, isbn 1-56677-396-2, 10 p.Conference Paper

Charges in HFO₂ ALD gate dielectricsBERSUKER, G; ZEITZOFF, P. M; HUFF, H. R et al.Proceedings - Electrochemical Society. 2003, pp 417-422, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Cluster ion beam process technologyYAMADA, Isao; TOYODA, Noriaki; MATSUO, Jiro et al.Proceedings - Electrochemical Society. 2003, pp 51-60, issn 0161-6374, isbn 1-56677-396-2, 10 p.Conference Paper

Effect of starting surface in atomic layer depositionHAUKKA, Suvi; TUOMINEN, Marko; VAINONEN-AHLGREN, Elizaveta et al.Proceedings - Electrochemical Society. 2003, pp 405-416, issn 0161-6374, isbn 1-56677-396-2, 12 p.Conference Paper

Batch atomic layer deposition for MIM capacitorsDE BLANK, René; JAN SNIJDERS, Gert; BEULENS, Sjaak et al.Proceedings - Electrochemical Society. 2003, pp 225-229, issn 0161-6374, isbn 1-56677-396-2, 5 p.Conference Paper

Advanced layer-by-layer deposition and annealing process for high-quality high-K dielectrics formationIWAMOTO, K; TOMINAGA, T; YASUDA, T et al.Proceedings - Electrochemical Society. 2003, pp 265-272, issn 0161-6374, isbn 1-56677-396-2, 8 p.Conference Paper

Fabrication of SiGe-on-insulator substrates for high-performance strained SOI-MOSFETs by germanium condensation techniqueTEZUKA, Tsutomu; SUGIYAMA, Naoharu; MIZUNO, Tomohisa et al.Proceedings - Electrochemical Society. 2003, pp 305-314, issn 0161-6374, isbn 1-56677-396-2, 10 p.Conference Paper

Growth and characterization of Al₂O₃:HfO₂nanolaminate films deposited by atomic layer depositionD'EMIC, C; GUSEV, E. P; COPEL, M et al.Proceedings - Electrochemical Society. 2003, pp 217-224, issn 0161-6374, isbn 1-56677-396-2, 8 p.Conference Paper

Pathways for advanced transistors using hafnium-based oxides by atomic layer depositionLONDERGAN, Ana R; RAMANATHAN, Sasangan; WINKLER, Jereld et al.Proceedings - Electrochemical Society. 2003, pp 243-249, issn 0161-6374, isbn 1-56677-396-2, 7 p.Conference Paper

Performance enhancements for 50 nm PMOS by angled pre-amorphization implants and fluorine implantsCHIDAMBARAM, P. R; EKBOTE, S; CHAKRAVARTHI, S et al.Proceedings - Electrochemical Society. 2003, pp 93-98, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Electrical characterization of silicon diodes formed by laser annealing of implanted dopantsNANVER, L. K; SLABBEKOORN, J; BURTSEV, A et al.Proceedings - Electrochemical Society. 2003, pp 119-130, issn 0161-6374, isbn 1-56677-396-2, 12 p.Conference Paper

Roadblocks and detours for poly-silicon/metal-oxide MOS integrationGILMER, D. C; HOBBS, C; GARCIA, R et al.Proceedings - Electrochemical Society. 2003, pp 345-359, issn 0161-6374, isbn 1-56677-396-2, 15 p.Conference Paper

Investigation of HFO₂ dielectrics for inter-poly dielectrics and metal-insulator-metal capacitorsPERNG, Tsu-Hsiu; CHIEN, Chao-Hsin; CHEN, Ching-Wei et al.Proceedings - Electrochemical Society. 2003, pp 465-469, issn 0161-6374, isbn 1-56677-396-2, 5 p.Conference Paper

High-k dielectric processing for germanium channel MOSFETsMCINTYRE, Paul C; CHI, David; KIM, Hyoungsub et al.Proceedings - Electrochemical Society. 2003, pp 295-304, issn 0161-6374, isbn 1-56677-396-2, 10 p.Conference Paper

Modelling of HfO₂ film deposition from Hf(MMP)4YANO, T; KAGATSUME, A; FUJIMOTO, T et al.Proceedings - Electrochemical Society. 2003, pp 437-442, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Laser thermal processing for ultra-shallow junction formation: Experiment and modellingVENTURINI, J; HERNANDEZ, M; SARNET, T et al.Proceedings - Electrochemical Society. 2003, pp 131-136, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Atomic vapour deposition of complex high-K thin films for sub-90 NM CMOS devicesLINDNER, J; MIEDL, S; SCHUMACHER, M et al.Proceedings - Electrochemical Society. 2003, pp 459-464, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Co-silicide, Co(Ni)-silicide and Ni-silicide to source/drain contact resistanceAKHEYAR, A; LAUWERS, A; MAEX, K et al.Proceedings - Electrochemical Society. 2003, pp 197-204, issn 0161-6374, isbn 1-56677-396-2, 8 p.Conference Paper

Excimer laser annealing: A solution for the future technology nodes ?PRIVITERA, V; LA MAGNA, A; MANNINO, G et al.Proceedings - Electrochemical Society. 2003, pp 137-143, issn 0161-6374, isbn 1-56677-396-2, 7 p.Conference Paper

TaN metal gate MOSFETs with aggressively scaled HfO₂ gate dielectricsLANDER, R. J. P; SCHRAM, T; KUBICEK, S et al.Proceedings - Electrochemical Society. 2003, pp 367-373, issn 0161-6374, isbn 1-56677-396-2, 7 p.Conference Paper

Time-resolved analysis of flash-assist RTP thermal pulse progression in SOI and bulk silicon wafersELLION, Kiefer; MCCOY, S; CAMM, D. M et al.Proceedings - Electrochemical Society. 2003, pp 17-24, issn 0161-6374, isbn 1-56677-396-2, 8 p.Conference Paper

Ultra-shallow junction formation: Current manufacturability issues and future prospectsHEBB, Jeffrey; AGARWAL, Aditya; GOSSMANN, Hans et al.Proceedings - Electrochemical Society. 2003, pp 83-92, issn 0161-6374, isbn 1-56677-396-2, 10 p.Conference Paper

Ultrathin plasma nitrided oxide gate dielectrics for sub-100 nm generation CMOS technologyJEON, Joong; YEH, Ping; OGLE, Bob et al.Proceedings - Electrochemical Society. 2003, pp 287-292, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper