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Advanced short-time thermal processing for Si-based CMOS devices (Paris, 27 April - 2 May 2003)Roozeboom, F; Gusev, E.P; Chen, L.J et al.Proceedings - Electrochemical Society. 2003, issn 0161-6374, isbn 1-56677-396-2, XIV, 480 p, isbn 1-56677-396-2Conference Proceedings

Junction scaling for 90 NM and beyondHWANG, Jack; KENNEL, Hal; PACKAN, Paul et al.Proceedings - Electrochemical Society. 2003, pp 35-42, issn 0161-6374, isbn 1-56677-396-2, 8 p.Conference Paper

Silicide scaling: Co, Ni or CoNi?LAUWERS, A; KITTL, J. A; AKHEYAR, A et al.Proceedings - Electrochemical Society. 2003, pp 167-176, issn 0161-6374, isbn 1-56677-396-2, 10 p.Conference Paper

Charges in HFO2 ALD gate dielectricsBERSUKER, G; ZEITZOFF, P. M; HUFF, H. R et al.Proceedings - Electrochemical Society. 2003, pp 417-422, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Cluster ion beam process technologyYAMADA, Isao; TOYODA, Noriaki; MATSUO, Jiro et al.Proceedings - Electrochemical Society. 2003, pp 51-60, issn 0161-6374, isbn 1-56677-396-2, 10 p.Conference Paper

Sidewall grooving on COSI2 narrow linesCHAMIRIAN, O; DE POTTER, M; LAUWERS, A et al.Proceedings - Electrochemical Society. 2003, pp 155-160, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Effect of starting surface in atomic layer depositionHAUKKA, Suvi; TUOMINEN, Marko; VAINONEN-AHLGREN, Elizaveta et al.Proceedings - Electrochemical Society. 2003, pp 405-416, issn 0161-6374, isbn 1-56677-396-2, 12 p.Conference Paper

Batch atomic layer deposition for MIM capacitorsDE BLANK, René; JAN SNIJDERS, Gert; BEULENS, Sjaak et al.Proceedings - Electrochemical Society. 2003, pp 225-229, issn 0161-6374, isbn 1-56677-396-2, 5 p.Conference Paper

A first principles examination of the diffusion of boron in silicon during microwave RTPTHOMPSON, K; BONIFAS, C. J; COOPER, R. F et al.Proceedings - Electrochemical Society. 2003, pp 61-66, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

HfO2 films by UV-assisted and thermal injection liquid source MOCVDO'SULLIVAN, B. J; HURLEY, P. K; RUSHWORTH, S et al.Proceedings - Electrochemical Society. 2003, pp 443-449, issn 0161-6374, isbn 1-56677-396-2, 7 p.Conference Paper

Development of 12 Å plasma nitrided gate dielectrics through characterization of process, physical and electrical parametersMINER, Gary; KRAUS, Philip; LEPERT, Arnaud et al.Proceedings - Electrochemical Society. 2003, pp 251-264, issn 0161-6374, isbn 1-56677-396-2, 14 p.Conference Paper

MOSFET channel engineering using strained silicon, silicon-germanium, and germanium channelsFITZGERALD, E. A; LEE, M. L; LEITZ, C. W et al.Proceedings - Electrochemical Society. 2003, pp 315-324, issn 0161-6374, isbn 1-56677-396-2, 10 p.Conference Paper

Relation between thermal evolution of interstitial defects and transient enhanced diffusion in siliconCLAVERIE, A; CRISTIANO, F; COLOMBEAU, B et al.Proceedings - Electrochemical Society. 2003, pp 73-82, issn 0161-6374, isbn 1-56677-396-2, 10 p.Conference Paper

Ultra-shallow junction formation by gas immersion laser doping (GILD) on silicon bulk and SOI substrateHERNANDEZ, M; SARNET, T; DEBARRE, D et al.Proceedings - Electrochemical Society. 2003, pp 145-151, issn 0161-6374, isbn 1-56677-396-2, 7 p.Conference Paper

Advanced layer-by-layer deposition and annealing process for high-quality high-K dielectrics formationIWAMOTO, K; TOMINAGA, T; YASUDA, T et al.Proceedings - Electrochemical Society. 2003, pp 265-272, issn 0161-6374, isbn 1-56677-396-2, 8 p.Conference Paper

Fabrication of SiGe-on-insulator substrates for high-performance strained SOI-MOSFETs by germanium condensation techniqueTEZUKA, Tsutomu; SUGIYAMA, Naoharu; MIZUNO, Tomohisa et al.Proceedings - Electrochemical Society. 2003, pp 305-314, issn 0161-6374, isbn 1-56677-396-2, 10 p.Conference Paper

Growth and characterization of Al2O3:HfO2nanolaminate films deposited by atomic layer depositionD'EMIC, C; GUSEV, E. P; COPEL, M et al.Proceedings - Electrochemical Society. 2003, pp 217-224, issn 0161-6374, isbn 1-56677-396-2, 8 p.Conference Paper

Pathways for advanced transistors using hafnium-based oxides by atomic layer depositionLONDERGAN, Ana R; RAMANATHAN, Sasangan; WINKLER, Jereld et al.Proceedings - Electrochemical Society. 2003, pp 243-249, issn 0161-6374, isbn 1-56677-396-2, 7 p.Conference Paper

Performance enhancements for 50 nm PMOS by angled pre-amorphization implants and fluorine implantsCHIDAMBARAM, P. R; EKBOTE, S; CHAKRAVARTHI, S et al.Proceedings - Electrochemical Society. 2003, pp 93-98, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Electrical characterization of silicon diodes formed by laser annealing of implanted dopantsNANVER, L. K; SLABBEKOORN, J; BURTSEV, A et al.Proceedings - Electrochemical Society. 2003, pp 119-130, issn 0161-6374, isbn 1-56677-396-2, 12 p.Conference Paper

Roadblocks and detours for poly-silicon/metal-oxide MOS integrationGILMER, D. C; HOBBS, C; GARCIA, R et al.Proceedings - Electrochemical Society. 2003, pp 345-359, issn 0161-6374, isbn 1-56677-396-2, 15 p.Conference Paper

Investigation of HFO2 dielectrics for inter-poly dielectrics and metal-insulator-metal capacitorsPERNG, Tsu-Hsiu; CHIEN, Chao-Hsin; CHEN, Ching-Wei et al.Proceedings - Electrochemical Society. 2003, pp 465-469, issn 0161-6374, isbn 1-56677-396-2, 5 p.Conference Paper

High-k dielectric processing for germanium channel MOSFETsMCINTYRE, Paul C; CHI, David; KIM, Hyoungsub et al.Proceedings - Electrochemical Society. 2003, pp 295-304, issn 0161-6374, isbn 1-56677-396-2, 10 p.Conference Paper

Modelling of HfO2 film deposition from Hf(MMP)4YANO, T; KAGATSUME, A; FUJIMOTO, T et al.Proceedings - Electrochemical Society. 2003, pp 437-442, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Laser thermal processing for ultra-shallow junction formation: Experiment and modellingVENTURINI, J; HERNANDEZ, M; SARNET, T et al.Proceedings - Electrochemical Society. 2003, pp 131-136, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

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