Electron emission by current injection from n-type diamond film surface with negative electron affinityTAKEUCHI, D; MAKINO, T; KATO, H et al.Physica status solidi. A, Applications and materials science (Print). 2010, Vol 207, Num 9, pp 2093-2098, issn 1862-6300, 6 p.Conference Paper

Photoemission characteristics of diamond filmsVOUAGNER, D; SHOW, Y; KIRALY, B et al.Applied surface science. 2000, Vol 168, Num 1-4, pp 79-84, issn 0169-4332Conference Paper

Negative electron affinity on polycrystalline diamond surface induced by lithium fluoride depositionWONG, K. W; WANG, Y. M; LEE, S. T et al.Diamond and related materials. 1999, Vol 8, Num 10, pp 1885-1890, issn 0925-9635Article

Degradation of a gallium-arsenide photoemitting NEA surface by water vapourDUREK, D; FROMMBERGER, F; REICHELT, T et al.Applied surface science. 1999, Vol 143, Num 1-4, pp 319-322, issn 0169-4332Article

NEA peak of the differently terminated and oriented diamond surfacesDIEDERICH, L; AEBI, P; KÜTTEL, O. M et al.Surface science. 1999, Vol 424, Num 2-3, pp L314-L320, issn 0039-6028Article

A proposal for a new type of thin-film field-emission display by edge breakdown of MIS structureKONOPSKY, V. N.Journal of physics. D, Applied physics (Print). 1998, Vol 31, Num 6, pp 617-621, issn 0022-3727Article

Protection of photomultipliers from overloadAPLIN, P. S.Measurement science & technology (Print). 1997, Vol 8, Num 3, pp 340-342, issn 0957-0233Article

Tubes intensificateurs d'image de 3^e générationFOUASSIER, M; PIAGET, C; RICHARD, J.-C et al.Acta electronica. 1987, Vol 27, Num 3-4, pp 159-163, issn 0001-558XArticle

Ionization kinetics of optically excited lithium vapour under conditions of negative electron mobilityGORBUNOV, N. A; MELNIKOV, A. S; SMUROV, I et al.Journal of physics. D, Applied physics (Print). 2001, Vol 34, Num 9, pp 1379-1388, issn 0022-3727Article

Interpretation of low-energy feature in energy spectra measured from surfaces with low or negative electron affinityYATER, J. E; SHIH, A.Applied surface science. 1999, Vol 143, Num 1-4, pp 219-222, issn 0169-4332Article

The diamond-vacuum interface: I. A model of the interface between an n-type semiconductor, with negative electron affinity, and the vacuumPRINS, Johan F.Semiconductor science and technology. 2003, Vol 18, Num 3, pp S125-S130, issn 0268-1242Article

Diamond/sp2-bonded carbon structures : quantum well field electron emission?KARABUTOV, A. V; FROLOV, V. D; KONOV, V. I et al.Diamond and related materials. 2001, Vol 10, Num 3-7, pp 840-846, issn 0925-9635Conference Paper

Field emission from filtered arc deposited amorphous diamondZHAO, J. P; CHEN, Z. Y; WANG, X et al.Materials letters (General ed.). 1998, Vol 35, Num 3-4, pp 157-160, issn 0167-577XArticle

Influence of the dopant concentration on the photoemission in NEA GaAs photocathodesVERGARA, G; GOMEZ, L; CAPMANY, J et al.Vacuum. 1997, Vol 48, Num 2, pp 155-160, issn 0042-207XArticle

Electron emitter device of NEA diamond thin filmHATTA, A; OGAWA, K; EIMORI, N et al.Applied surface science. 1997, Vol 117-18, pp 592-596, issn 0169-4332Conference Paper

Negative electron affinity based vacuum collector transistorWILLIAMS, M. D; FEUER, M. D; SHUNK, S. C et al.Journal of applied physics. 1992, Vol 71, Num 6, pp 3042-3044, issn 0021-8979Article

Experimental study of lifetimes and current production from a GaAs electron sourceCALABRESE, R; GUIDI, V; LAMANNA, G et al.Journal de physique 3, Applied physics, materials science, fluids, plasma and instrumentation. 1992, Vol 2, Num 3, pp 473-480Article

Emission characterization from nitrogen-doped diamond with respect to energy conversionKOECK, Franz A. M; NEMANICH, Robert J.Diamond and related materials. 2006, Vol 15, Num 2-3, pp 217-220, issn 0925-9635, 4 p.Conference Paper

On the possibility of negative electron mobility in a decaying plasmaDYATKO, N. A; NAPARTOVICH, A. P; SAKADZIC, S et al.Journal of physics. D, Applied physics (Print). 2000, Vol 33, Num 4, pp 375-380, issn 0022-3727Article

Electron field emission from a cesiated NEA diamond (100) surface : an activation conceptKÜTTEL, O. M; GRÖNING, O; SCHALLER, E et al.Diamond and related materials. 1996, Vol 5, Num 6-8, pp 807-811, issn 0925-9635Conference Paper

Photoelectron spectroscopy with high augular and energy resolution for GaAs with negative electron affinityKORABLEV, V. V; KUDINOV, Y. A; SUGAIPOV, M. S et al.Soviet journal of communications technology & electronics. 1992, Vol 37, Num 8, pp 84-88, issn 8756-6648Article

Use of X-ray photoelectron spectroscopy method to determine the surface composition of GaAs and Inp photocathodes with a negative electron affinity during thermal desorptionKOROTKIKH, V. L; AFANAS'YEV, M. V; TURCHINSKIY, V. M et al.Soviet journal of communications technology & electronics. 1992, Vol 37, Num 9, pp 86-90, issn 8756-6648Article

Complex band structures and decay length in polyethylene chainsPICAUD, Fabien; SMOGUNOV, Alexander; DAL CORSO, Andrea et al.Journal of physics. Condensed matter (Print). 2003, Vol 15, Num 22, pp 3731-3740, issn 0953-8984, 10 p.Article

A new surface electron-emission mechanism in diamond cathodesGEIS, M. W; EFREMOW, N. N; KROHN, K. E et al.Nature (London). 1998, Vol 393, Num 6684, pp 431-435, issn 0028-0836Article

Selective emission of electrons from patterned negative electron affinity cathodesSANTOS, E. J. P; MACDONALD, N. C.I.E.E.E. transactions on electron devices. 1994, Vol 41, Num 4, pp 607-611, issn 0018-9383Article