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Results 1 to 25 of 4389

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Low threshold InAlGaAs/AlGaAs strained quantum well lasers grown by molecular beam epitaxyCHYI, J.-I; GAU, J.-H; SHIEH, J.-L et al.Solid-state electronics. 1995, Vol 38, Num 5, pp 1105-1106, issn 0038-1101Article

Spin-polarized electron transport and emission from strained superlatticesAMBRAJEI, A. N; CLENDENIN, J. E; EGOROV, A. Yu et al.Applied surface science. 2000, Vol 166, pp 40-44, issn 0169-4332Conference Paper

Photoconductivity of regular low dimensional arrays of GaAs wiresKSENEVICH, V. K; VALUSIS, G; ROSKOS, H. G et al.Materials science forum. 2002, pp 87-90, issn 0255-5476, isbn 0-87849-890-7Conference Paper

The limiting capabilities of injection-laser-based recirculating optical range finders under actual temperature conditionsKOROSTIK, K. N.Journal of engineering physics and thermophysics. 2001, Vol 74, Num 2, pp 390-396, issn 1062-0125Article

160 GHz harmonic mode-locked AlGaInAs 1.55 μm strained quantum-well compound-cavity laserLIANPING HOU; HAJI, Mohsin; DYLEWICZ, Rafal et al.Optics letters. 2010, Vol 35, Num 23, pp 3991-3993, issn 0146-9592, 3 p.Article

Theoretical analysis of band structures and lasing characteristics in strained quantum wire lasersYAMAUCHI, T; TAKAHASHI, T; SCHULMAN, J. N et al.IEEE journal of quantum electronics. 1993, Vol 29, Num 6, pp 2109-2116, issn 0018-9197Article

Excited state dynamics in In0.5Al0.04Ga0.46As/Al0.08Ga0.92As self-assembled quantum dotsSMITH, L. M; LEOSSON, K; ERLAND, J et al.Physica status solidi. B. Basic research. 2001, Vol 224, Num 2, pp 447-451, issn 0370-1972Conference Paper

Strained AlGaInAs/AlGaAs quantum wells and quantum-well lasers grown by molecular beam epitaxyO'KEEFE, S. S; SCHAFF, W. J; EASTMAN, L. F et al.IEEE photonics technology letters. 1993, Vol 5, Num 7, pp 738-740, issn 1041-1135Article

Native oxides on AlGaAs epilayerGHITA, R. V; VASILE, E; CENGHER, D et al.Thin solid films. 1999, Vol 338, Num 1-2, pp 46-48, issn 0040-6090Article

Phase equilibria in III-V quinary systemsRUBTSOV, E. R; KUZNETSOV, V. V; LEBEDEV, O. A et al.Inorganic materials. 1998, Vol 34, Num 5, pp 422-426, issn 0020-1685Article

Optical and structural analysis of degraded high power InGaAlAs/AlGaAs lasersFRIGERI, C; BAEUMLER, M; MIGLIORI, A et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 66, Num 1-3, pp 209-214, issn 0921-5107Conference Paper

Low divergence angle and low jitter 40 GHz AlGaInAs/InP 1.55 μm mode-locked lasersLIANPING HOU; HAJI, Mohsin; AKBAR, Jehan et al.Optics letters. 2011, Vol 36, Num 6, pp 966-968, issn 0146-9592, 3 p.Article

GaAlAs-based micromachined accelerometerKONCZEWICZ, L; LEE, H. Y; SADOWSKI, M. L et al.Physica status solidi. B. Basic research. 2001, Vol 223, Num 2, pp 593-596, issn 0370-1972Article

Emission of optically coupled semiconductor lasersBORISOV, P. V; BYKOVSKII, Yu A; DEDUSHENKO, K. B et al.Quantum electronics (Woodbury). 2000, Vol 30, Num 10, pp 867-872, issn 1063-7818Article

A theory of broad-area semiconductor lasers with modal reflectorsSZYMANSKI, M; KUBICA, J. M; SZCZEPANSKI, P et al.Journal of physics. D, Applied physics (Print). 1997, Vol 30, Num 8, pp 1181-1189, issn 0022-3727Article

On the double negative-differential resistance of a superlattice-emitter resonant-tunneling bipolar transistorWEN-SHIUNG LOUR.Solid-state electronics. 1995, Vol 38, Num 5, pp 965-969, issn 0038-1101Article

Coherent and incoherent exciton dynamics in Al1-yGayAs/GaAs multiple quantum wellsOBERHAUSER, D; PANTKE, K. H; LANGBEIN, W et al.Physica status solidi. B. Basic research. 1992, Vol 173, Num 1, pp 53-68, issn 0370-1972Conference Paper

Quantitative thermal imaging of GaInAsSb/AlGaAsSb laser diodes by thermoreflectanceTESSIER, G; SALHI, A; ROUILLARD, Y et al.Journal de physique. IV. 2005, Vol 125, pp 375-378, issn 1155-4339, 4 p.Conference Paper

Novel fabrication of 3-D microstructures by volume oxidation of AlGaAsHSU, Alan Y; CICH, Michael J; VAWTER, Gregory A et al.Lasers and Electro-optics Society. 2004, isbn 0-7803-8557-8, 2Vol, Vol1, 366-367Conference Paper

Side-mode injection locking characteristics of 150 mW AlGaAs semiconductor lasersXIAOHUI WANG; XUZONG CHEN; JIDONG HOU et al.Optics communications. 2000, Vol 178, Num 1-3, pp 165-173, issn 0030-4018Article

Enhanced spontaneous emission using quantum dots and an apertured microcavityDEPPE, D. G; GRAHAM, L. A; HUFFAKER, D. L et al.IEEE journal of quantum electronics. 1999, Vol 35, Num 10, pp 1502-1508, issn 0018-9197Article

Coupled quantum dots fabricated by cleaved edge overgrowth : From artificial atoms to moleculesSCHEDELBECK, G; WEGSCHEIDER, W; BICHLER, M et al.Science (Washington, D.C.). 1997, Vol 278, Num 5344, pp 1792-1795, issn 0036-8075Article

Interisland exciton migration and enhanced bound exciton recombination in an AlGaAs/GaAs quantum well structure grown by molecular beam epitaxy without growth interruptions at interfacesGODLEWSKI, M; HOLTZ, P. O; BERGMAN, J. P et al.Semiconductor science and technology. 1997, Vol 12, Num 11, pp 1416-1421, issn 0268-1242Article

A high polarization and high quantum efficiency photocathode using a GaAs-AlGaAs superlatticeKURIHARA, Y; OMORI, T; MIZUTA, M et al.Japanese journal of applied physics. 1995, Vol 34, Num 1, pp 355-358, issn 0021-4922, 1Article

Carrier-induced lensing in broad-area and tapered semiconductor amplifiersHALL, D. C; SURETTE, M. R; GOLDBERG, L et al.IEEE photonics technology letters. 1994, Vol 6, Num 2, pp 186-188, issn 1041-1135Article

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