Ultraviolet-sensitive AlGaN-based surface acoustic wave devicesCIPLYS, D; SHUR, M. S; PALA, N et al.IEEE Sensors conference. 2004, isbn 0-7803-8692-2, 3Vol, vol 3, 1345-1348Conference Paper

Essential strategies for the growth of high-quality (Al, Ga)N/GaN and GaN/(In, Ga)N heterostructures on SiC(0001) by molecular beam epitaxyBRANDT, O; MURALIDBARAN, R; THAMM, A et al.SPIE proceedings series. 2000, pp 1495-1506, isbn 0-8194-3601-1Conference Paper

Nitrogen precursors in metalorganic vapor phase epitaxy of (Al,Ga)NBEAUMONT, B; GIBART, P; FAURIE, J. P et al.Journal of crystal growth. 1995, Vol 156, Num 3, pp 140-146, issn 0022-0248Article

Resonant Raman scattering in (Al, Ga)N/GaN quantum well structuresGLEIZE, J; DEMANGEOT, F; FRANDON, J et al.Thin solid films. 2000, Vol 364, Num 1-2, pp 156-160, issn 0040-6090Conference Paper

Advantages of blue InGaN light-emitting diodes with AlGaN barriersCHANG, Jih-Yuan; TSAI, Miao-Chan; KUO, Yen-Kuang et al.Optics letters. 2010, Vol 35, Num 9, pp 1368-1370, issn 0146-9592, 3 p.Article

Growth of thick AlGaN by mixed-source hydride vapor phase epitaxyAHN, H. S; KIM, K. H; YAMAGUCHI, M et al.Applied surface science. 2005, Vol 243, Num 1-4, pp 178-182, issn 0169-4332, 5 p.Article

Scanning near-field optical spectroscopy of AlGaN-based light emitting diodesPINOS, Andrea; MARCINKEVICIUS, Saulius.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7602, issn 0277-786X, isbn 0-8194-7998-5 978-0-8194-7998-3, 1Vol, 76020T.1-76020T.8Conference Paper

Measurement of Al_xGa_1-xN refractive indicesWEBB-WOOD, G; ÖZGÜR, Ü; EVERITT, H. O et al.Physica status solidi. A. Applied research. 2001, Vol 188, Num 2, pp 793-797, issn 0031-8965Conference Paper

Defect and stress control of AlGaN for fabrication of high performance UV light emittersAMAND, H; MIYAZAKI, A; SAHONTA, S et al.Physica status solidi. A. Applied research. 2004, Vol 201, Num 12, pp 2679-2685, issn 0031-8965, 7 p.Conference Paper

Ridge-type AlGaInN-based laser diode structure by selective regrowthWEI ZHAO; DETCHPROHM, Theeradetch; WENTING HOU et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 7, pp 1603-1606, issn 1862-6300, 4 p.Article

MOCVD growth and annealing characteristics of Mg-doped AlGaN filmsYAO, J; HAN, P; ZHENG, Y. D et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 69842N.1-69842N.4, issn 0277-786X, isbn 978-0-8194-7182-6, 1VolConference Paper

The residual donor binding energy in AlGaN epitaxial layersSTEUDE, G; HOFMANN, D. M; MEYER, B. K et al.Physica status solidi. A. Applied research. 1998, Vol 165, Num 2, pp R3-R4, issn 0031-8965Article

Determination of strain state and composition of highly mismatched group-III nitride heterostructures by X-ray diffraction : Special issue on III-nitride semiconductorsBRANDT, Oliver; WALTEREIT, Patrick; PLOOG, Klaus H et al.Journal of physics. D, Applied physics (Print). 2002, Vol 35, Num 7, pp 577-585, issn 0022-3727Article

Synchrotron-based XPS studies of AlGaN and GaN surface chemistry and its relationship to ion sensor behaviourFARAH LIYANA MUHAMMAD KHIR; MYERS, Matthew; PODOLSKA, Anna et al.Applied surface science. 2014, Vol 314, pp 850-857, issn 0169-4332, 8 p.Article

Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxyXU PAN; XIAOLIANG WANG; HONGLING XIAO et al.Applied surface science. 2011, Vol 257, Num 20, pp 8718-8721, issn 0169-4332, 4 p.Article

AlGaN BASED III-NITRIDE TUNNEL BARRIER HYPERSPECTRAL DETECTOR FOR INFRARED DETECTIONSHAHEDIPOUR-SANDVIK, F; TRIPATHI, N; BELL, L. D et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8155, issn 0277-786X, isbn 978-0-8194-8765-0, 81550P.1-81550P.10Conference Paper

Avalanche Photodiodes for High Resolution UV Imaging ApplicationsSOOD, Ashok K; RICHWINE, Robert A; EGERTON, E. James et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8155, issn 0277-786X, isbn 978-0-8194-8765-0, 815509.1-815509.7Conference Paper

Gain Characteristics of Deep UV AlGaN Quantum Wells LasersJING ZHANG; HONGPING ZHAO; TANSU, Nelson et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7953, issn 0277-786X, isbn 978-0-8194-8490-1, 79530H.1-79530H.9Conference Paper

III-Nitride semiconductors for intersubband devicesKOTSAR, Y; MACHHADANI, H; SAKR, S et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7945, issn 0277-786X, isbn 978-0-8194-8482-6, 79451D.1-79451D.7Conference Paper

AlGaN/GaN High Electron Mobility Transistor Based Sensors for Environmental and Bio-ApplicationsCHU, B. H; WANG, Y. L; KROLL, Kevin et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7679, issn 0277-786X, isbn 978-0-8194-8143-6, 76790Q.1-76790Q.12Conference Paper

Review of nitride infrared intersubband devicesTCHERNYCHEVA, Maria; JULIEN, François H; MONROY, Eva et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7602, issn 0277-786X, isbn 0-8194-7998-5 978-0-8194-7998-3, 1Vol, 76021A.1-76021A.12Conference Paper

Improved Surface Morphology and Edge Definition for Ohmic Contacts to AlGaN/GaN HeterostructuresLAN, Yung-Ling; LIN, Hung-Cheng; LIU, Hsueh-Hsing et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7216, issn 0277-786X, isbn 978-0-8194-7462-9 0-8194-7462-2, 1Vol, 72162P.1-72162P.5Conference Paper

Formation of deep acceptor centers in AlGaN alloysDIMITROCENKO, L; GRUBE, J; KULIS, P et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7142, pp 71420P.1-71420P.6, issn 0277-786X, isbn 9780819473844Conference Paper

Effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with AlGaN or AlInGaN electronic blocking layersCHANG, Shu-Hsuan; CHEN, Jun-Rong; LEE, Chung-Hsien et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 636813.1-636813.1, issn 0277-786X, isbn 0-8194-6466-X, 1Vol, -636813.10Conference Paper

Very low dislocation density AlN substrates for device applicationsSCHUJMAN, Sandra B; SCHOWALTER, Leo J; LIU, Wayne et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 61210K.1-61210K.7, issn 0277-786X, isbn 0-8194-6163-6Conference Paper