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Results 1 to 25 of 91

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Two-dimensional nucleation in crystal growth: thermodynamically consistent description of the nucleation workKASHCHIEV, Dimo.Journal of crystal growth. 2004, Vol 267, Num 3-4, pp 685-702, issn 0022-0248, 18 p.Article

An interpretation of the metastable zone width concerning primary nucleation in anti-solvent crystallizationKUBOTA, Noriaki.Journal of crystal growth. 2008, Vol 310, Num 22, pp 4647-4651, issn 0022-0248, 5 p.Article

A simple model explaining the preferential (100) orientation of silicon thin films made by aluminum-induced layer exchangeSCHNEIDER, J; SARIKOV, A; KLEIN, J et al.Journal of crystal growth. 2006, Vol 287, Num 2, pp 423-427, issn 0022-0248, 5 p.Conference Paper

MOCVD growth of GaN islands by multistep nucleation layer techniqueLANG, T; ODNOBLYUDOV, M; BOUGROV, V et al.Journal of crystal growth. 2005, Vol 277, Num 1-4, pp 64-71, issn 0022-0248, 8 p.Article

Selective silicon growth on nitride for silicon-plugging process in LPCVDCHEONG, Woo-Seok; LEE, Seok-Kiu; ROH, Jae-Sung et al.Journal of crystal growth. 2003, Vol 254, Num 3-4, pp 329-335, issn 0022-0248, 7 p.Article

Computer simulation, thermodynamic and microstructural studies of benzamide-benzoic acid eutectic systemSINGH, N. B; DAS, S. S; SINGH, N. P et al.Journal of crystal growth. 2008, Vol 310, Num 11, pp 2878-2884, issn 0022-0248, 7 p.Article

Long-range ordering of GaN nano-grains grown on vicinal sapphire substratesCHOE, Hyeokmin; LEE, Sanghwa; SHIN, Boa et al.Journal of crystal growth. 2008, Vol 310, Num 14, pp 3278-3281, issn 0022-0248, 4 p.Article

Low-temperature growth of ZnO with controllable shapes and band gapsJIANHUI ZHANG; HUAIYONG LIU; ZHENLIN WANG et al.Journal of crystal growth. 2008, Vol 310, Num 11, pp 2848-2853, issn 0022-0248, 6 p.Article

A fusion-crystalization mechanism for nucleation of misfit dislocations in FCC epitaxial filmsNAIGEN ZHOU; LANG ZHOU.Journal of crystal growth. 2006, Vol 289, Num 2, pp 681-685, issn 0022-0248, 5 p.Article

Nonisothermal study on crystallization kinetics of GeSe2-As2Se3-CdSe chalcogenide glasses by differential scanning calorimeterDONGHUI ZHAO; ZHANG, X. H; FANG XIA et al.Journal of crystal growth. 2005, Vol 285, Num 1-2, pp 228-235, issn 0022-0248, 8 p.Article

Roughening transition of an SOS model with elastic interactionsMÜLLER-KRUMBHAAR, H; GUTHEIM, F; PÜTTER, C et al.Journal of crystal growth. 2005, Vol 275, Num 1-2, pp 51-55, issn 0022-0248, 5 p.Conference Paper

Dislocation nucleation in 4H silicon carbide epitaxyHA, S; CHUNG, H. J; NUHFER, N. T et al.Journal of crystal growth. 2004, Vol 262, Num 1-4, pp 130-138, issn 0022-0248, 9 p.Article

Initial growth behavior of Cu(In, Ga)Se2 on molybdenum substratesSCHLENKER, T; SCHOCK, H. W; WERNER, J. H et al.Journal of crystal growth. 2003, Vol 259, Num 1-2, pp 47-51, issn 0022-0248, 5 p.Article

Femtosecond laser-induced nucleation of protein in agarose gelYOSHIKAWA, Hiroshi Y; MURAI, Ryota; TAKANO, Kazufumi et al.Journal of crystal growth. 2009, Vol 311, Num 3, pp 956-959, issn 0022-0248, 4 p.Conference Paper

In-situ observation of ettringite crystalsKOMATSU, Ryuichi; MIZUKOSHI, Norihiro; MAKIDA, Koji et al.Journal of crystal growth. 2009, Vol 311, Num 3, pp 1005-1008, issn 0022-0248, 4 p.Conference Paper

Polymorph control of sulfamerazine by ultrasonic irradiationKUROTANI, Masahiro; HIRASAWA, Izumi.Journal of crystal growth. 2008, Vol 310, Num 21, pp 4576-4580, issn 0022-0248, 5 p.Article

Effect of the low-temperature buffer thickness on quality of insb grown on GaAs substrate by molecular beam epitaxyWU, S. D; GUO, L. W; LI, Z. H et al.Journal of crystal growth. 2005, Vol 277, Num 1-4, pp 21-25, issn 0022-0248, 5 p.Article

Effects of gravity on zeolite crystallization from solutionHONGWEI SONG; ILEGBUSI, Olusegun J; SACCO, Albert JR et al.Journal of crystal growth. 2005, Vol 277, Num 1-4, pp 623-630, issn 0022-0248, 8 p.Article

Lysozyme crystallization rates controlled by anomalous fluctuationsPULLARA, F; EMANUELE, A; PALMA-VITTORELLI, M. B et al.Journal of crystal growth. 2005, Vol 274, Num 3-4, pp 536-544, issn 0022-0248, 9 p.Article

Experimental study of brushite precipitationARIFUZZAMAN, S. M; ROHANI, S.Journal of crystal growth. 2004, Vol 267, Num 3-4, pp 624-634, issn 0022-0248, 11 p.Article

Artificial control of ZnO nanostructures grown by metalorganic chemical vapor depositionFUJITA, Shizuo; KIM, Sang-Woo; UEDA, Masaya et al.Journal of crystal growth. 2004, Vol 272, Num 1-4, pp 138-142, issn 0022-0248, 5 p.Conference Paper

Scanning tunneling microscopy study of GaAs overgrowth on InAs islands formed on GaAs(001)HASEGAWA, Shigehiko; SUEKANE, Osamu; TAKATA, Masahiro et al.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 161-165, issn 0022-0248, 5 p.Conference Paper

VO2 rods with a rectangular cross-sectionLILONG JIANG; MINGDENG WEI; BINGHUO YE et al.Journal of crystal growth. 2008, Vol 310, Num 19, pp 4301-4304, issn 0022-0248, 4 p.Article

Nucleation and growth of CUSO4 . 5H2O crystals on the liquid state stearic acid Langmuir-Blodgett filmFEI LU; WANG, Hai-Shui; XINMEI ZHAO et al.Journal of crystal growth. 2008, Vol 310, Num 22, pp 4652-4655, issn 0022-0248, 4 p.Article

A study on the probability of twin plane formation during the nucleation of AgBr and AgCl crystals in the aqueous gelatin solutionOHZEKI, Katsuhisa; HOSOYA, Yoichi.Journal of crystal growth. 2007, Vol 305, Num 1, pp 192-200, issn 0022-0248, 9 p.Article

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