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Results 1 to 25 of 223

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Diffraction property of ultrashort laser pulses in photorefractive multiple quantum wellsNAKAGAWA, Kiyoshi; MINEMOTO, Takumi; KITA, Takashi et al.SPIE proceedings series. 2000, pp 9-16, isbn 0-8194-3755-7Conference Paper

Reflectance of GaAs/(AlGa)As disordered superlatticesLORUSSO, G. F; TASSONE, F; CAPOZZI, V et al.Solid state communications. 1996, Vol 98, Num 8, pp 705-709, issn 0038-1098Article

Interband transitions and electronic properties of InAs/GaAs quantum dots embedded in AlxGa1-xAs/GaAs modulation-doped heterostructuresIM, H. C; KIM, J. H; OH, D. H et al.Applied surface science. 2006, Vol 252, Num 12, pp 4146-4153, issn 0169-4332, 8 p.Article

Changing planar thin film growth into self-assembled island formation by adjusting experimental conditionsJIE SUN; JIN, P; WANG, Z. G et al.Thin solid films. 2005, Vol 476, Num 1, pp 68-72, issn 0040-6090, 5 p.Article

Coherent Raman resonance from electron spin coherence in GaAs quantum wellsPALINGINIS, Phedon; HAILIN WANG.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 15, pp 153307.1-153307.4, issn 1098-0121Article

Resonant photoionization absorption spectra of spherical quantum dotsBONDARENKO, Victor; YANG ZHAO.Journal of physics. Condensed matter (Print). 2003, Vol 15, Num 9, pp 1377-1385, issn 0953-8984, 9 p.Article

Time constant of the far-IR response of a quantum Hall deviceEROFEEVA, I. V; GAVRILENKO, V. I; KOMIYAMA, S et al.Nanotechnology (Bristol. Print). 2001, Vol 12, Num 4, pp 453-456, issn 0957-4484Conference Paper

The optical intersubband absorption bandgap in quantum wells embedded in an asymmetric microcavityXIN CHEN.Journal of physics. Condensed matter (Print). 1999, Vol 11, Num 11, pp 2471-2480, issn 0953-8984Article

Collapse of quantized Hall resistance and breakdown of IQHE in GaAs/AlGaAs heterostructuresKAWAJI, S; SUZUKI, J; SHIMADA, T et al.Journal of the Physical Society of Japan. 1998, Vol 67, Num 4, pp 1110-1113, issn 0031-9015Article

Subsurface charge accumulation imaging of a quantum Hall liquidTESSMER, S. H; GLICOFRIDIS, P. I; ASHOORI, R. C et al.Nature (London). 1998, Vol 392, Num 6671, pp 51-54, issn 0028-0836Article

Absorption saturation studies of Landau levels in quasi-two-dimensional systemsMURATOV, L. S; STOCKMAN, M. I; PANDEY, L. N et al.Superlattices and microstructures. 1997, Vol 21, Num 4, pp 501-508, issn 0749-6036Article

High-field domain formation conditions in semiconductor multiple quantum well sequential resonant tunneling structuresSHIMADA, Y; HIRAKAWA, K.Japanese journal of applied physics. 1997, Vol 36, Num 3A, pp 1012-1014, issn 0021-4922, 1Article

Strong exciton absorption peak enhancement without redshift of absorption edge in Al0.3Ga0.7As/GaAs five-step asymmetric coupled quantum well with modified potentialFENG, H; SUGIYAMA, M; PANG, J.-P et al.Japanese journal of applied physics. 1997, Vol 36, Num 7A, pp L855-L856, issn 0021-4922, 2Article

Calculations of the time taken for excitons to form in GaAs quantum wellsZHANG, M. H; HUANG, Q; ZHOU, J. M et al.Journal of physics. Condensed matter (Print). 1997, Vol 9, Num 46, pp 10185-10194, issn 0953-8984Article

Naturally formed GaAs quantum dotsGAMMON, D; SNOW, E. S; KATZER, D. S et al.Surface science. 1996, Vol 361-62, Num 1-3, pp 814-817, issn 0039-6028Conference Paper

A comparison of Si-doped (100), (111)A, (111)B and (311)B AlxGa1-xAs samples grown by molecular beam epitaxyPAVESI, L; HENINI, M; JOHNSTON, D et al.Semiconductor science and technology. 1995, Vol 10, Num 1, pp 49-55, issn 0268-1242Article

Design trade-offs and evaluation of the performance attainable by GaAs-Al0.3Ga0.7As asymmetric Fabry-Perot modulatorsZOUGANELI, P; STEVENS, P. J; ATKINSON, D et al.IEEE journal of quantum electronics. 1995, Vol 31, Num 5, pp 927-943, issn 0018-9197Article

More than 103 times photoluminescence intensity recovery by silicon interface-control-layer-based surface passivation of near-surface quantum wellsHASEGAWA, H; KODAMA, S; KOYANAGI, S et al.Japanese journal of applied physics. 1995, Vol 34, Num 4B, pp L495-L498, issn 0021-4922, 2Article

Transmission electron microscopy observation of GaAs/Al0.3Ga0.7As T-shaped quantum well structure fabricated by glancing angle molecular beam epitaxy on GaAs(100) reverse-mesa etched substratesTANAKA, M; TOMITA, N; HIGUCHI, T et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 388-393, issn 0022-0248, 1Conference Paper

Investigation of the hole resonant energies in GaAs-AlGaAs double-barrierSEKKAL, N; ZITOUNI, K; KADRI, A et al.Superlattices and microstructures. 1994, Vol 16, Num 4, pp 391-397, issn 0749-6036Article

Symmetric self-electro-optic effect device using symmetric-cavity quantum well electroabsorption modulatorsZOUGANELI, P; GRINDLE, R. J; RIVERS, A. W et al.IEEE photonics technology letters. 1994, Vol 6, Num 8, pp 939-941, issn 1041-1135Article

Two-dimensional Franz-Keldysh effect in MQW structures with lateral electric fieldsKNEISSL, M; LINDER, N; KIESEL, P et al.Superlattices and microstructures. 1994, Vol 16, Num 2, pp 109-113, issn 0749-6036Article

Spectroscopic transmission ellipsometry studies of semiconductor heterostructuresOZANYAN, K. B; HUNDERI, O.Physica. A. 1994, Vol 207, Num 1-3, pp 420-426, issn 0378-4371Conference Paper

Tunneling between highly correlated 2D electron systemsEISENSTEIN, J. P; PFEIFFER, L. N; WEST, K. W et al.Surface science. 1994, Vol 305, Num 1-3, pp 393-397, issn 0039-6028Conference Paper

Interdiffusion behavior in Al0.3Ga0.7As/GaAs superlatticesKIM, S. K; KANG, T. W; HONG, C. Y et al.Physica status solidi. A. Applied research. 1993, Vol 136, Num 1, pp 99-105, issn 0031-8965Article

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