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Performance improvements of ultraviolet/infrared dual-band detectorsPERERA, A. G. U; ARIYAWANSA, G; BEZINGER, A et al.Infrared physics & technology. 2007, Vol 50, Num 2-3, pp 142-148, issn 1350-4495, 7 p.Conference Paper

Highly reliable blue-violet inner stripe laser diodes using planar regrowth of AlGaN/GaN superlattice cladding layerFUKUDA, K; KOHMOTO, S; MATSUDATE, M et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 6, pp 2094-2097, issn 1862-6300, 4 p.Conference Paper

Improved thermal characteristic of InGaN laser diodes with AlGaN ridge passivation layerRYU, H. Y; SAKONG, T; SON, J. K et al.Electronics letters. 2009, Vol 45, Num 25, pp 1318-1320, issn 0013-5194, 3 p.Article

Iridium oxides based gate interface of AlGaN/GaN high electron mobility transistors formed by high temperature oxidationLALINSKY, T; VALLO, M; VANKO, G et al.Applied surface science. 2013, Vol 283, pp 160-167, issn 0169-4332, 8 p.Article

SIMS quantification of matrix and impurity species in Al_xGa_1-xNGU, C. J; STEVIE, F. A; HITZMAN, C. J et al.Applied surface science. 2006, Vol 252, Num 19, pp 7228-7231, issn 0169-4332, 4 p.Conference Paper

Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructureMATSUO, Kazushi; NEGORO, Noboru; KOTANI, Junji et al.Applied surface science. 2005, Vol 244, Num 1-4, pp 273-276, issn 0169-4332, 4 p.Conference Paper

Synchrotron-based XPS studies of AlGaN and GaN surface chemistry and its relationship to ion sensor behaviourFARAH LIYANA MUHAMMAD KHIR; MYERS, Matthew; PODOLSKA, Anna et al.Applied surface science. 2014, Vol 314, pp 850-857, issn 0169-4332, 8 p.Article

Interface properties of an O₂ annealed Au/Ni/n-Al_0.18Ga_0.82N Schottky contactLEGODI, M. J; MEYER, W. E; AURET, F. D et al.Physica. B, Condensed matter. 2012, Vol 407, Num 10, pp 1599-1602, issn 0921-4526, 4 p.Conference Paper

Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxyXU PAN; XIAOLIANG WANG; HONGLING XIAO et al.Applied surface science. 2011, Vol 257, Num 20, pp 8718-8721, issn 0169-4332, 4 p.Article

Photo-capacitance spectroscopy investigation of deep-level defects in AlGaN/GaN hetero-structures with different current collapsesNAKANO, Yoshitaka; IROKAWA, Yoshihiro; SUMIDA, Yasunobu et al.Physica status solidi. Rapid research letters (Print). 2010, Vol 4, Num 12, pp 374-376, issn 1862-6254, 3 p.Article

Analysis of the carrier concentration for field emission from Al_xGa_1-xNCHOI, Tae S; CHUNG, Moon S.Applied surface science. 2005, Vol 251, Num 1-4, pp 191-195, issn 0169-4332, 5 p.Conference Paper

Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructureHARMATHA, Ladislav; STUCHLIKOVA, Lubica; RACKO, Juraj et al.Applied surface science. 2014, Vol 312, pp 102-106, issn 0169-4332, 5 p.Article

Effect of Al mole fraction on structural and electrical properties of Al_xGa_1―xN/GaN heterostructures grown by plasma-assisted molecular beam epitaxyHUSSEIN, A. SH; HASSAN, Z; THAHAB, S. M et al.Applied surface science. 2011, Vol 257, Num 9, pp 4159-4164, issn 0169-4332, 6 p.Article

Effect of radio frequency power on the inductively coupled plasma etched Al_0.65Ga_0.35N surfaceBAI, Y; LIU, J; MA, P et al.Applied surface science. 2010, Vol 256, Num 21, pp 6254-6258, issn 0169-4332, 5 p.Article

Solar-blind MSM-photodetectors based on Alx Ga1-xN heterostructuresAVERIN, Stanislav V; KUZNETZOV, Petr I; ZHITOV, Victor A et al.Optical and quantum electronics. 2007, Vol 39, Num 3, pp 181-192, issn 0306-8919, 12 p.Article

Optimal design of GaN-AlGaN Bragg-confined structures for intersubband absorption in the near-infrared spectral rangeRADOVANOVIC, Jelena; MILANOVIC, Vitomir; IKONIC, Zoran et al.IEEE journal of quantum electronics. 2003, Vol 39, Num 10, pp 1297-1304, issn 0018-9197, 8 p.Article

GaN epitaxy: How to characterize hazards for the operatorsPROUST, N; POISSON, M. A; THENOT, D et al.Physica status solidi. A. Applied research. 2002, Vol 192, Num 2, pp 371-376, issn 0031-8965Conference Paper

Growth by molecular beam epitaxy and optical properties of a Ten-period AlGan/AlN distributed Bragg reflector on (111)SiSEMOND, F; ANTOINE-VINCENT, N; SCHNELL, N et al.Physica status solidi. A. Applied research. 2001, Vol 183, Num 1, pp 163-167, issn 0031-8965Conference Paper

A model of trap-assisted tunneling in GaN/AlGaN/GaN heterostructure based on exchange timesRACKO, Juraj; BENKO, Peter; HOTOVY, Ivan et al.Applied surface science. 2014, Vol 312, pp 68-73, issn 0169-4332, 6 p.Article

Recent advances on dielectrics technology for SiC and GaN power devicesROCCAFORTE, F; FIORENZA, P; GRECO, G et al.Applied surface science. 2014, Vol 301, pp 9-18, issn 0169-4332, 10 p.Conference Paper

Study on the Electron Overflow in 264 nm A1GaN Light-Emitting DiodesJICAI ZHANG; SAKAI, Yusuke; EGAWA, Takashi et al.IEEE journal of quantum electronics. 2010, Vol 46, Num 11-12, pp 1854-1859, issn 0018-9197, 6 p.Article

High performance Al_xGa_1-xN-based avalanche photodiodesTUT, Turgut; BUTUN, Bayram; GOKKAVAS, Mutlu et al.Photonics and nanostructures (Print). 2007, Vol 5, Num 2-3, pp 140-144, issn 1569-4410, 5 p.Article

Grating-gate tunable plasmon absorption in InP and GaN based HEMTsPEALE, R. E; SAXENA, H; BUCHWALD, W. R et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7467, issn 0277-786X, isbn 978-0-8194-7757-6 0-8194-7757-5, 1Vol, 74670Q.1-74670Q.8Conference Paper

Resonant terahertz absorption by plasmons in grating-gate GaN HEMT structuresMURAVJOV, A. V; VEKSLER, D. B; HU, X et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7311, issn 0277-786X, isbn 978-0-8194-7577-0, 73110D.1-73110D.7Conference Paper