kw.\*:("Altura barrera")
Results 1 to 25 of 1363
Selection :
Protein folding rates correlate with heterogeneity of folding mechanismÖZTOP, B; EJTEHADI, M. R; PLOTKIN, S. S et al.Physical review letters. 2004, Vol 93, Num 20, pp 208105.1-208105.4, issn 0031-9007Article
Schottky-barrier-height engineering for strained-Si MOSFETsIKEDA, Keiji; YAMASHITA, Yoshimi; ENDOH, Akira et al.DRC : Device research conference. 2004, pp 111-112, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper
Effect of lateral inhomogeneity of Barrier height on the photoresponse characteristics of Schottky junctionsHORVATH, Z. J; VO VAN TUYEN.SPIE proceedings series. 1998, pp 65-67, isbn 0-8194-2808-6Conference Paper
Thermally activated escape over fluctuating barriersZÜRCHER, U; DOERING, C. R.Physical review. A. 1993, Vol 47, Num 6E, pp 3862-3869, issn 1050-2947Article
Barrier height of titanium silicide Scholttky barrier diodesKIKUCHI, A.Japanese journal of applied physics. 1986, Vol 25, Num 11, pp L894-L895, issn 0021-4922Article
Escape rates in the region between the Kramers limitsLINKWITZ, S; GRABERT, H.Physical review. A. 1992, Vol 45, Num 6, pp R3369-R3372, issn 1050-2947Article
Schottky contact barrier height enhancement on p-type silicon by wet chemical etchingADEGBOYEGA, G. A; POGGI, A; SUSI, E et al.Applied physics. A, Solids and surfaces. 1989, Vol 48, Num 4, pp 391-395, issn 0721-7250Article
Optische Barrierenmodulation bei Silizium-Bulk-Barrier-Photodioden = Modulation optique de la barrière de potentiel des photodiodes silicium = Optical modulation of the Barrier of Silicon Bulk barrier photodiodesGEORGOULAS, N.AEU. Archiv für Elektronik und Übertragungstechnik. 1989, Vol 43, Num 6, pp 381-387, issn 0001-1096Article
Quantum wells with localized states at energies above the barrier height : a Fabry-Perot electron filterSIRTORI, C; CAPASSO, F; FAIST, J et al.Applied physics letters. 1992, Vol 61, Num 8, pp 898-900, issn 0003-6951Article
The dependence of barrier height and effective recombination velocity on the grain boundary theories in polycrystalline siliconBEN AMAR, M; BEN ARAB, A.World renewable energy congress. 2000, pp 1986-1989, isbn 0-080-43865-2, 4VolConference Paper
Photocurrent investigation on a graded heterojunctionGRUMMT, G; PICKENHAIN, R; OELGART, G et al.Physica status solidi. A. Applied research. 1990, Vol 122, Num 2, pp 765-772, issn 0031-8965, 8 p.Article
A simplified approach to reduce the effective barrier height of triangular barrier structuresGUPTA, R. S; CHILANA, G. S; SRIVASTAVA, G. P et al.Physica status solidi. A. Applied research. 1986, Vol 96, Num 1, pp K89-K93, issn 0031-8965Article
Eine analytische Approximation für den Potentialverlauf bei Schottky-Randschichten = Approximation analytique du saut de potentiel pour une barrière SchottkyLEMKE, H.Physica status solidi. A. Applied research. 1986, Vol 96, Num 2, pp K213-K217, issn 0031-8965Article
Ramp rate dependence of NiSi formation studied by silicided Schottky contactJIANG, Y.-L; RU, G.-P; LI, B.-Z et al.Electronics Letters. 2005, Vol 41, Num 2, pp 103-104, issn 0013-5194, 2 p.Article
Numerical model for current conduction in single layer organic light-emitting devices including both bulk and injection effectsPENG, Ying-Quan; SONG, Chang-An; SHUO SUN et al.Semiconductor science and technology. 2004, Vol 19, Num 9, pp 1117-1121, issn 0268-1242, 5 p.Article
Band offsets in GaSb/AlGaAsSb : correlation with the Schottky barrier height and the depth of native acceptorsPOLYAKOV, A. Y; MILNES, A. G; EGLASH, S. J et al.Solid-state electronics. 1993, Vol 36, Num 4, pp 649-651, issn 0038-1101Article
Consequences of spatial distributions of the interface states on the Schottky barrierLU, G. N; BARRET, C; NEFFATI, T et al.Solid-state electronics. 1990, Vol 33, Num 1, pp 1-9, issn 0038-1101Article
Temperature dependent barrier heights in bulk unipolar diodes leading to improved temperature stable performanceKEARNEY, M. J; KELLY, M. J; CONDIE, A et al.Electronics Letters. 1990, Vol 26, Num 10, pp 671-672, issn 0013-5194Article
Mechanisms for the formation of low temperature, non-alloyed Au-Ge ohmic contacts to n-GaAsDORNATH-MOR, M. A; COLE, M. W; COSANDEY, F et al.Journal of electronic materials. 1990, Vol 19, Num 11, pp 1247-1255, issn 0361-5235Conference Paper
Schottky barrier instabilities due to contaminationNEWMAN, N; LILIENTAL-WEBER, Z; WEBER, E. R et al.Applied physics letters. 1988, Vol 53, Num 2, pp 145-147, issn 0003-6951Article
Barrier height modification of metal/germanium Schottky diodesHAN, C. C; MARSHALL, E. D; FANG, F et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1988, Vol 6, Num 6, pp 1662-1666, issn 0734-211XArticle
Effect of surface treatment on Al-Si Schottky structuresVAYA, P. R; MAJHI, J.Physica status solidi. A. Applied research. 1988, Vol 106, Num 2, pp K209-K213, issn 0031-8965Article
Correlation of interface composition and barrier height for model AuGeNi contacts to GaAsWALDROP, J. R; GRANT, R. W.Applied physics letters. 1987, Vol 50, Num 5, pp 250-252, issn 0003-6951Article
Noise in epitaxial silicon bulk unipolar diodesWERRES, C; VESCAN, L; BENEKING, H et al.Electronics Letters. 1987, Vol 23, Num 12, pp 613-614, issn 0013-5194Article
Etude expérimentale des contacts avec une faible hauteur de barrière sur le n-GaAsDUBROVSKIJ, V. N; KARASEV, A. S; KIREEV, O. A et al.Radiotehnika i èlektronika. 1987, Vol 32, Num 3, pp 612-616, issn 0033-8494Article