p-Channel AlGaAs/GaAs heterostructure FETS employing two-dimensional hole gasHIRANO, M; OE, K; YANAGAWA, F et al.Japanese journal of applied physics. 1984, Vol 23, Num 11, pp L868-L870, issn 0021-4922Article

Frequency offset locking of AlGaAs semiconductor lasersKUBOKI, K; OHTSU, M.IEEE journal of quantum electronics. 1987, Vol 23, Num 4, pp 388-394, issn 0018-9197Article

Highly efficient, long lived AlGaAs lasers fabricated by silicon impurity induced disorderingTHORNTON, R. L; BURNHAM, R. D; PAOLI, T. L et al.Applied physics letters. 1986, Vol 49, Num 3, pp 133-134, issn 0003-6951Article

Improved Al_xGa_1-xAs bulk lasers with superlattice interfacesFISCHER, R; KLEM, J; DRUMMOND, T. J et al.Applied physics letters. 1984, Vol 44, Num 1, pp 1-3, issn 0003-6951Article

Accurate modeling of AlGaAs/GaAs heterostructure bipolar transistors by two-dimensional computer simulationYOKOYAMA, K; TOMIZAWA, M; YOSHII, A et al.I.E.E.E. transactions on electron devices. 1984, Vol 31, Num 9, pp 1222-1229, issn 0018-9383Article

Twisted-terraced-substrate GaAs/AlGaAs lasersCHEN, K.-L; SUGINO, T; WANG, S et al.Electronics Letters. 1984, Vol 20, Num 2, pp 91-93, issn 0013-5194Article

A comparative study of intensity pulsations in a double heterostructure Al_xGa_1-xAs laser with and without an external resonator presentGLAS, P; KLEHR, A; HARTWIG, P et al.Optical and quantum electronics. 1985, Vol 17, Num 3, pp 175-186, issn 0306-8919Article

Fabrication and characteristics of MCRW GaAs/GaAlAs lasers on semiinsulating substrateMULLER, G; HONSBERG, M.Journal of optical communications. 1985, Vol 6, Num 2, pp 42-43, issn 0173-4911Article

Origin of high offset voltage in an AlGaAs/GaAs heterojunction bipolar transistorSI-CHEN LEE; JAU-NAN KAU; HAO-HSIUNG LIN et al.Applied physics letters. 1984, Vol 45, Num 10, pp 1114-1116, issn 0003-6951Article

Limit of the frequency stability in AlGaAs semiconductor lasersTSUCHIDA, H; TAKO, T.Japanese journal of applied physics. 1983, Vol 22, Num 12, pp 1870-1875, issn 0021-4922Article

High efficiency, high modulation bandwidth (Ga,Al)As:Te,Zn light-emitting diodes with graded band gapLEIBENZEDER, S; RÜHLE, W; HOFFMANN, L et al.Applied physics letters. 1985, Vol 46, Num 10, pp 978-980, issn 0003-6951Article

Twisted double-heterostructure GaAs-(AlGa) As laserSUGINO, T; SHYH WANG.Applied physics letters. 1983, Vol 43, Num 5, pp 427-429, issn 0003-6951Article

Wavelength modification of Al_xGa_1-x as quantum well heterostructure lasers by layer interdifffusionCAMRAS, M. D; HOLONYAK, N. JR; BURNHAM, R. D et al.Journal of applied physics. 1983, Vol 54, Num 10, pp 5637-5641, issn 0021-8979Article

Fabrication and characterization of AlGaAs/GaAS heterojunction bipolar transistorsITO, H; ISHIBASHI, T; SUGETA, T et al.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 2, pp 224-229, issn 0018-9383Article

Design of n-p-n AlGaAs double-heterojunction bipolar transistorsCHUNG-ZEN CHEN; SI-CHEN LEE; HAO-HSIUNG LIN et al.Journal of applied physics. 1987, Vol 62, Num 9, pp 3976-3979, issn 0021-8979Article

Photoconductivity in selectively n- and p-doped Al_xGa_1-x/GaAs heterostructuresSCHUBERT, E. F; FISCHER, A; PLOOG, K et al.Solid-state electronics. 1986, Vol 29, Num 2, pp 173-180, issn 0038-1101Article

Pressure dependence of Al_xGa_1-x As light emitting diodes near the direct-indirect transitionKALISKI, R. W; EPLER, J. E; CRAFORD, M. G et al.Journal of applied physics. 1985, Vol 57, Num 5, pp 1734-1738, issn 0021-8979Article

A new chemical etching technique for formation of cavity facets of (GaAl)As lasersWADA, M; HAMADA, K; SHIBUTANI, T et al.IEEE journal of quantum electronics. 1985, Vol 21, Num 6, pp 658-662, issn 0018-9197Article

Effects of GaAs/AlAs superlattice buffer layers on selective area regrowth for GaAs/AlGaAs self-aligned structure lasersNODA, S; FUJIWARA, K; NAKAYAMA, T et al.Applied physics letters. 1985, Vol 47, Num 11, pp 1205-1207, issn 0003-6951Article

Monolithic phase-locked GaAlAs laser arraysKAPPELER, F.Siemens Forschungs- und Entwicklungsberichte. 1985, Vol 14, Num 6, pp 289-294, issn 0370-9736Article

Temperature dependence of current gain in AlGaAs/GaAs heterojunction bipolar transistorsCHAND, N; FISCHER, R; HENDERSON, T et al.Applied physics letters. 1984, Vol 45, Num 10, pp 1086-1088, issn 0003-6951Article

Catastrophic and latent damage in GaAlAs lasers caused by electrical transientsSIM, S. P; ROBERTSON, M. J; PLUMB, R. G et al.Journal of applied physics. 1984, Vol 55, Num 11, pp 3950-3955, issn 0021-8979Article

Extremely low resistance ohmic contacts to n-GaAs for AlGaAs/GaAs heterojunction bipolar transistorsITO, H; ISHIBASHI, T; SUGETA, T et al.Japanese journal of applied physics. 1984, Vol 23, Num 8, pp L635-L637, issn 0021-4922, 2Article

Tunneling hot electron transistor using GaAs/AlGaAs heterojunctionsYOKOYAMA, N; IMAMURA, K; OHSHIMA, T et al.Japanese journal of applied physics. 1984, Vol 23, Num 5, pp L311-L312, issn 0021-4922, 2Article

Gain measurements on semiconductor lasers by optical feedback from an external grating cavityGADE, N; OSMUNDSEN, J. H.IEEE journal of quantum electronics. 1983, Vol 19, Num 8, pp 1238-1242, issn 0018-9197Article