A comparative study of intensity pulsations in a double heterostructure Al_xGa_1-xAs laser with and without an external resonator presentGLAS, P; KLEHR, A; HARTWIG, P et al.Optical and quantum electronics. 1985, Vol 17, Num 3, pp 175-186, issn 0306-8919Article

Fabrication and characteristics of MCRW GaAs/GaAlAs lasers on semiinsulating substrateMULLER, G; HONSBERG, M.Journal of optical communications. 1985, Vol 6, Num 2, pp 42-43, issn 0173-4911Article

Origin of high offset voltage in an AlGaAs/GaAs heterojunction bipolar transistorSI-CHEN LEE; JAU-NAN KAU; HAO-HSIUNG LIN et al.Applied physics letters. 1984, Vol 45, Num 10, pp 1114-1116, issn 0003-6951Article

Limit of the frequency stability in AlGaAs semiconductor lasersTSUCHIDA, H; TAKO, T.Japanese journal of applied physics. 1983, Vol 22, Num 12, pp 1870-1875, issn 0021-4922Article

Frequency offset locking of AlGaAs semiconductor lasersKUBOKI, K; OHTSU, M.IEEE journal of quantum electronics. 1987, Vol 23, Num 4, pp 388-394, issn 0018-9197Article

Highly efficient, long lived AlGaAs lasers fabricated by silicon impurity induced disorderingTHORNTON, R. L; BURNHAM, R. D; PAOLI, T. L et al.Applied physics letters. 1986, Vol 49, Num 3, pp 133-134, issn 0003-6951Article

Improved Al_xGa_1-xAs bulk lasers with superlattice interfacesFISCHER, R; KLEM, J; DRUMMOND, T. J et al.Applied physics letters. 1984, Vol 44, Num 1, pp 1-3, issn 0003-6951Article

Accurate modeling of AlGaAs/GaAs heterostructure bipolar transistors by two-dimensional computer simulationYOKOYAMA, K; TOMIZAWA, M; YOSHII, A et al.I.E.E.E. transactions on electron devices. 1984, Vol 31, Num 9, pp 1222-1229, issn 0018-9383Article

Twisted-terraced-substrate GaAs/AlGaAs lasersCHEN, K.-L; SUGINO, T; WANG, S et al.Electronics Letters. 1984, Vol 20, Num 2, pp 91-93, issn 0013-5194Article

p-Channel AlGaAs/GaAs heterostructure FETS employing two-dimensional hole gasHIRANO, M; OE, K; YANAGAWA, F et al.Japanese journal of applied physics. 1984, Vol 23, Num 11, pp L868-L870, issn 0021-4922Article

High efficiency, high modulation bandwidth (Ga,Al)As:Te,Zn light-emitting diodes with graded band gapLEIBENZEDER, S; RÜHLE, W; HOFFMANN, L et al.Applied physics letters. 1985, Vol 46, Num 10, pp 978-980, issn 0003-6951Article

Twisted double-heterostructure GaAs-(AlGa) As laserSUGINO, T; SHYH WANG.Applied physics letters. 1983, Vol 43, Num 5, pp 427-429, issn 0003-6951Article

Wavelength modification of Al_xGa_1-x as quantum well heterostructure lasers by layer interdifffusionCAMRAS, M. D; HOLONYAK, N. JR; BURNHAM, R. D et al.Journal of applied physics. 1983, Vol 54, Num 10, pp 5637-5641, issn 0021-8979Article

Improved AlGaAs/GaAs HBT performance by InGaAs emitter cap layerNAGATA, K; NAKAJIMA, O; NITTONO, T et al.Electronics Letters. 1987, Vol 23, Num 11, pp 566-568, issn 0013-5194Article

Photoluminescence in AlGaAs/GaAs heterojunction bipolar transistorsEDA, K; INADA, M.Journal of applied physics. 1987, Vol 62, Num 10, pp 4236-4243, issn 0021-8979Article

A proposed structure for collector transit-time reduction in AlGaAs/GaAs bipolar transistorsMAZIAR, C. M; KLAUSMEIER-BROWN, M. E; LUNDSTROM, M. S et al.IEEE electron device letters. 1986, Vol EDL-7, Num 8, pp 483-485, issn 0741-3106Article

Verification of the charge-control model for GaAlAs/GaAs heterojunction bipolar transistorsTASSELLI, J; MARTY, A; BAILBE, J. P et al.Solid-state electronics. 1986, Vol 29, Num 9, pp 919-923, issn 0038-1101Article

Electron subband structure in selectively doped n-Al_xGa_1-xAs/GaAs heterostructuresSCHUBERT, E. F; PLOOG, K.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 9, pp 1868-1873, issn 0018-9383Article

Vertical electron transistor (VET) in GaAs with a heterojunction (AlGaAs-GaAs) cathodeMISHRA, U; MAKI, P. A; WENDT, J. R et al.Electronics Letters. 1984, Vol 20, Num 3, pp 145-146, issn 0013-5194Article

Achievements of the quantum noise limited frequency stability in AlGaAs semiconductor laserTSUCHIDA, H; TAKO, T.Japanese journal of applied physics. 1983, Vol 22, Num 8, pp 496-498, issn 0021-4922Article

Relation between frequency and intensity stabilities in AlGaAs semiconductor laserTSUCHIDA, H; TAKO, T.Japanese journal of applied physics. 1983, Vol 22, Num 7, pp 1152-1156, issn 0021-4922Article

Filament formation in a tapered GaAlAs optical amplifierGOLDBERG, L; SURETTE, M. R; MEHUYS, D et al.Applied physics letters. 1993, Vol 62, Num 19, pp 2304-2306, issn 0003-6951Article

Properties of red light-emitting (AlGa)As single-heterostructure diodes. I: Structure characterizationHAEFNER, H; HEIDER, M; KOCH, F et al.Physica status solidi. A. Applied research. 1987, Vol 99, Num 2, pp 657-667, issn 0031-8965Article

AlGaAs/GaAs heterojunction bipolar transistor circuits with improved high-speed performanceCHANG, M. F; ASBECK, P. M; WANG, K. C et al.Electronics Letters. 1986, Vol 22, Num 22, pp 1173-1174, issn 0013-5194Article

An empirical pseudopotential analysis of (100) and (110) GaAs-Al_xGa₁-_xAs heterojunctionsMARSH, A. C; INKSON, J. C.Journal of physics. C. Solid state physics. 1986, Vol 19, Num 1, pp 43-52, issn 0022-3719Article