Effects of buffer layers in GaAs-In_0.2Al_0.8As strained-layer superlatticesNAKAYAMA, M; KUBOTA, K; KATO, H et al.Applied physics letters. 1986, Vol 48, Num 4, pp 281-283, issn 0003-6951Article

Required grading length to eliminate the heterojunction spike in npn In_0.52Al_0.48As/In_0.53Ga_0.47As/InP bipolar transistorsCHAND, N; MORKOC, H.Electronics Letters. 1985, Vol 21, Num 19, pp 841-843, issn 0013-5194Article

Evidence of non-communitativity of band discontinuities in InP-Al(IN)As-Ga(In)As heterostructuresLUGAGNE-DELPON, E; ANDRE, J. P; VOISIN, P et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 635-639, issn 0038-1101Conference Paper

Effective mass filtering: giant quantum amplification of the photocurrent in a semiconductor superlatticeCAPASSO, F; KHALID MOHAMMED; CHO, A. Y et al.Applied physics letters. 1985, Vol 47, Num 4, pp 420-422, issn 0003-6951Article

Photoluminescence determination of well depth of Ga_0.47In_0.53As/Al_0.48In_0.52As in an ultrathin single quantum wellSHUM, K; HO, P. P; ALFANO, R. R et al.Physical review. B, Condensed matter. 1985, Vol 32, Num 6, pp 3806-3810, issn 0163-1829Article

Calculation of the conduction band discontinuity for Ga_0.47In_0.53As/Al_0.48In_0.52As heterojunctionWELCH, D. F; WICKS, G. W; EASTMAN, L. F et al.Journal of applied physics. 1984, Vol 55, Num 8, pp 3176-3179, issn 0021-8979Article

Staggered-lineup heterojunctions as sources of tunable below-gap radiation: experimental verificationCAINE, E. J; SUBBANNA, S; KROEMER, H et al.Applied physics letters. 1984, Vol 45, Num 10, pp 1123-1125, issn 0003-6951Article

In_0.52Al_0.48As/In_0.53Ga_0.47As/In_0.52Al_0.48As abrupt double-heterojunction bipolar transistorsWAI LEE; FONSTAD, C. G.IEEE electron device letters. 1986, Vol 7, Num 12, pp 683-685, issn 0741-3106Article

GA_0.47IN_0.53AS/AL_0.48IN_0.52AS MULTIQUANTUM-WELL LEDS EMITTING AT 1.6 MU MALAVI K; PEARSALL TP; FORREST SR et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 6; PP. 227-229; BIBL. 11 REF.Article

Enhanced annealing kinetics in ion-implanted In_xAl_1-xAs studied by x-ray diffractometryCLARKE, R; DOS PASSOS, W; YI-JEN CHAN et al.Applied physics letters. 1991, Vol 58, Num 20, pp 2267-2269, issn 0003-6951Article

Room-temperature excitons in 1.6-μm band-gap GalnAs/AllnAs quantum wellsWEINER, J. S; CHEMLA, D. S; MILLER, D. A. B et al.Applied physics letters. 1985, Vol 46, Num 7, pp 619-621, issn 0003-6951Article

Low resistance alloyed ohmic contacts to Al_0.48In_0.52As/n⁺-Ga_0.47In_0.53AsCAPANI, P. M; MUKHERJEE, S. D; ZWICKNAGL, P et al.Electronics Letters. 1984, Vol 20, Num 11, pp 446-447, issn 0013-5194Article

Impact ionization rates for electrons and holes in Al_0.48In_0.52AsCAPASSO, F; MOHAMMED, K; ALAVI, K et al.Applied physics letters. 1984, Vol 45, Num 9, pp 968-970, issn 0003-6951Article

High-speed InAlAs/InGaAs heterojunction bipolar transistorsFUKANO, H; KAWAMURA, Y; TAKANASHI, Y et al.IEEE electron device letters. 1988, Vol 9, Num 6, pp 312-314, issn 0741-3106Article

Ga_0.4In_0.6As/Al_0.55In_0.45As pseudomorphic modulation-doped field-effect transistorsKUO, J. M; TAO-YUANG CHANG; LALEVIC, B et al.IEEE electron device letters. 1987, Vol 8, Num 9, pp 380-382, issn 0741-3106Article

Photoluminescence study of In_xAl_1-xAs-GaAs strained-layer superlatticesKATO, H; IGUCHI, N; CHIKA, S et al.Journal of applied physics. 1986, Vol 59, Num 2, pp 588-592, issn 0021-8979Article

Effective mass reversal on In_xAl_1-xAs/GaAs strained-layer superlatticesKATO, H; IGUCHI, N; CHIKA, S et al.Japanese journal of applied physics. 1986, Vol 25, Num 9, pp 1327-1331, issn 0021-4922, 1Article

Raman study of GaAs-in_xAl_1-xAs strained-layer superlatticesNAKAYAMA, M; KUBOTA, K; KANATA, T et al.Journal of applied physics. 1985, Vol 58, Num 11, pp 4342-4345, issn 0021-8979Article

Disordering by Zn-diffusion of InGaAs/InAlAs MQW superlattice structure grown by MBEKAWAMURA, Y; ASAHI, H; KOHZEN, A et al.Electronics Letters. 1985, Vol 21, Num 6, pp 218-219, issn 0013-5194Article

Two-dimensional magneto-transport in a new type of heterostructure, InP/n-AlInAsINOUE, M; NAKAJIMA, S.Solid state communications. 1984, Vol 50, Num 11, pp 1023-1025, issn 0038-1098Article

Zero effective electron g-factor of QD realized by optically induced nuclear fieldSASAKURA, H; ADACHI, S; KAJI, R et al.Physica status solidi. B. Basic research. 2009, Vol 246, Num 4, pp 784-787, issn 0370-1972, 4 p.Article

Double junction AllnAs/GaInAs multiquantum well avalanche photodiodesLE BELLEGO, Y; PRASEUTH, J. P; SCAVENNEC, A et al.Electronics Letters. 1991, Vol 27, Num 24, pp 2228-2230, issn 0013-5194Article

Magnetophonon resonance and remote phonon scattering in a GaInAs-AlInAs multiquantum wellNICHOLAS, R. J; BEN AMOR, S; PORTAL, J. C et al.Semiconductor science and technology. 1989, Vol 4, Num 2, pp 116-118, issn 0268-1242Article

Impact ionization coefficient ratio in InGaAs/InAlAs superlattice avalanche photodiodes determined from noise measurementsYU, Y.-J; BOSMAN, G; BHATTACHARYA, P. K et al.Applied physics letters. 1987, Vol 51, Num 18, pp 1433-1435, issn 0003-6951Article

Determination of the microscopic quality of InGaAs-InAlAs interfaces by photoluminescence. Role of interrupted molecular beam epitaxial growthJUANG, F.-Y; BHATTACHARYA, P. K; SINGH, J et al.Applied physics letters. 1986, Vol 48, Num 4, pp 290-292, issn 0003-6951Article