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Disordering by Zn-diffusion of InGaAs/InAlAs MQW superlattice structure grown by MBEKAWAMURA, Y; ASAHI, H; KOHZEN, A et al.Electronics Letters. 1985, Vol 21, Num 6, pp 218-219, issn 0013-5194Article

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Zero effective electron g-factor of QD realized by optically induced nuclear fieldSASAKURA, H; ADACHI, S; KAJI, R et al.Physica status solidi. B. Basic research. 2009, Vol 246, Num 4, pp 784-787, issn 0370-1972, 4 p.Article

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Magnetophonon resonance and remote phonon scattering in a GaInAs-AlInAs multiquantum wellNICHOLAS, R. J; BEN AMOR, S; PORTAL, J. C et al.Semiconductor science and technology. 1989, Vol 4, Num 2, pp 116-118, issn 0268-1242Article

Impact ionization coefficient ratio in InGaAs/InAlAs superlattice avalanche photodiodes determined from noise measurementsYU, Y.-J; BOSMAN, G; BHATTACHARYA, P. K et al.Applied physics letters. 1987, Vol 51, Num 18, pp 1433-1435, issn 0003-6951Article

Determination of the microscopic quality of InGaAs-InAlAs interfaces by photoluminescence. Role of interrupted molecular beam epitaxial growthJUANG, F.-Y; BHATTACHARYA, P. K; SINGH, J et al.Applied physics letters. 1986, Vol 48, Num 4, pp 290-292, issn 0003-6951Article

Optical characterization of InGaAs-InAlAs strained-layer superlattices grown by molecular beam epitaxyNISHI, K; HIROSE, K; MIZUTANI, T et al.Applied physics letters. 1986, Vol 49, Num 13, pp 794-796, issn 0003-6951Article

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Frequency-shifted polaron coupling in Ga_0.47In_0.53As heterojunctionsNICHOLAS, R. J; BRUNEL, L. C; HUANT, S et al.Physical review letters. 1985, Vol 55, Num 8, pp 883-886, issn 0031-9007Article

High-temperature heavy-hole and light-hole excitons and well-width dependence of excitons in InGaAs/InAlAs multiple-quantum-well structuresKAWAMURA, Y; WAKITA, K; ASAHI, H et al.Electronics Letters. 1985, Vol 21, Num 24, pp 1168-1169, issn 0013-5194Article