Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("Aluminium Nitrides")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Origin

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 5282

  • Page / 212
Export

Selection :

  • and

Mécanisme de frittage sous charge du nitrure d'aluminium et de l'oxynitrure AlON-γ = Pressure sintering mechanisms of aluminium nitride and oxynitride AlON-γADO, G; BERNACHE, D; BILLY, M et al.Revue de chimie minérale. 1985, Vol 22, Num 4, pp 473-483, issn 0035-1032Article

Aluminum nitride (AlN)MATTHEW, D. V.American Ceramic Society bulletin. 1999, Vol 78, Num 6, pp 69-71, issn 0002-7812Article

Une céramique polycristalline transparente: l'oxynitrure d'aluminium = A polycrystalline transparent ceramic: aluminium oxynitrideADO, G; BILLY, M; GUILLO, P et al.L' Industrie céramique (Paris). 1985, Num 792, pp 173-174, issn 0019-9044Article

Oxygen behavior of normal and HIP sintered AlNISHIZAKI, K; WATARI, K.The Journal of physics and chemistry of solids. 1989, Vol 50, Num 10, pp 1009-1012, issn 0022-3697, 4 p.Article

ION BEAM TECHNIQUES COMBINING INSULATOR DEPOSITION AND HYDROGEN PLASMA ETCHING FOR III-IV COMPOUND METAL/INSULATOR/SEMICONDUCTOR DEVICE APPLICATIONSSIBRAN C; BLANCHET R; GARRIGUES M et al.1983; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1983; VOL. 103; NO 1-2; PP. 211-219; BIBL. 16 REF.Article

The Si3Al4N4C3 and Si3Al5N5C3 compounds as SiC-AlN solid solutionsAVIGDOR ZANGVIL; RUH, R.Journal of materials science letters. 1984, Vol 3, Num 3, pp 249-250, issn 0261-8028Article

Determination of carrier type in MIS structures with pyrolytic AlN insulator filmsREUTERS, P. J; DOTHANH, L; BALK, P et al.Physica status solidi. A. Applied research. 1984, Vol 83, Num 2, pp 719-727, issn 0031-8965Article

Microstructural evolution during pressureless infiltration of aluminium alloy parts fabricated by selective laser sinteringPENG YU; SCHAFFER, G. B.Acta materialia. 2009, Vol 57, Num 1, pp 163-170, issn 1359-6454, 8 p.Article

ETUDE DU DIAGRAMME DE PHASES Al2O3-AlN = STUDY OF Al2O3-AlN PHASE DIAGRAMTabary, Patrick; Servant, Colette.1997, 210 p.Thesis

AlN-based ceramics : an alternative to Si3N4 and SiC in high-temperature applications?GOGOTSI, Y. G; DESMAISON, J; RICHTER, G et al.Key engineering materials. 1997, pp 1600-1603, issn 1013-9826, isbn 0-87849-761-7, 3VolConference Paper

Preparation of Al2O3-AlON and Al2O3-AlN composites via reaction-bondingCAI, K. F; MCLACHLAN, D. S; SIGALAS, I et al.Journal of materials science letters. 2001, Vol 20, Num 3, pp 193-195, issn 0261-8028Article

Evolution of the secondary phase AlON in AlN during its bonding with CaO-doped tungstenDENOIRJEAN-DERIU, P; LEFORT, P.Journal of the European Ceramic Society. 1993, Vol 11, Num 4, pp 359-362, issn 0955-2219Article

Effects of additive on the microwave synthesis of AIN powderXIOFENG ZENG; DUANFEN QIAN; WEIFENG LI et al.Journal of the American Ceramic Society. 2007, Vol 90, Num 10, pp 3289-3292, issn 0002-7820, 4 p.Article

Synthesis and sintering of AIN using enriched nitrogenMARUYAMA, T; ISHIKAWA, M.Journal of Nuclear Science and Technology. 1996, Vol 33, Num 7, pp 597-603, issn 0022-3131Article

Effect of rolling on structure and properties of aluminium nitride powder and material on its base. I : powdersKATRUS, O. A; TKACHENKO, YU. G; OLEINIK, G. S et al.Poroškovaâ metallurgiâ (Kiev). 1992, Num 3, pp 41-44, issn 0032-4795Article

Plasma activated sintering of additive-free AlN powders to near-theoretical density in 5 minutesGROZA, J. R; RISBUD, S. H; YAMAZAKI, K et al.Journal of materials research. 1992, Vol 7, Num 10, pp 2643-2645, issn 0884-2914Article

Optical properties and stress of ion-assisted aluminum nitride thin filmsMARTIN, P; NETTERFIELD, R; KINDER, T et al.Applied optics. 1992, Vol 31, Num 31, pp 6734-6740, issn 0003-6935Article

Essor du nitrure d'aluminium au Japon = Progress of aluminium nitride in JapanJARRIGE, J; GUINET, J.L' Industrie céramique (Paris). 1990, Num 853, pp 683-685, issn 0019-9044, 3 p.Article

Effects of InP surface treatment on the electrical properties and structures of AlN/n-InP interfaceFUJIEDA, S; AKIMOTO, K; HIROSAWA, I et al.Japanese journal of applied physics. 1989, Vol 28, Num 1, pp L16-L18, issn 0021-4922, part 2Article

Preparation of a composite powder of the system SiC-AINMITOMO, M; TSUTSUMI, M; KISHI, Y et al.Journal of materials science letters. 1988, Vol 7, Num 11, pp 1151-1153, issn 0261-8028Article

Comportement dans la vapeur d'eau à haute température du nitrure d'aluminium fritté = High temperature behaviour of AlN based ceramics in water vaporYEFSAH, S; BILLY, M; JARRIGE, J et al.Annales de chimie (Paris. 1914). 1985, Vol 10, Num 2, pp 79-83, issn 0151-9107Article

Pressage à chaud du système AlN-ZrO2(PSZ)NISHIDA, T; YAMAGUCHI, T; UENO, I et al.Zairyo. 1984, Vol 33, Num 374, pp 1360-1365, issn 0514-5163Article

Oxidation of sintered aluminium nitrideLAVRENKO, V. A; ALEXEEX, A. F.Ceramics international. 1983, Vol 9, Num 3, pp 80-82, issn 0272-8842Article

Growth of AlN single crystals by modified PVTHONGLEI WU; RUISHENG ZHENG; SHU MENG et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7135, issn 0277-786X, isbn 978-0-8194-7375-2 0-8194-7375-8, 71350H.1-71350H.7, 2Conference Paper

Effect of hydrogen on improving purity of WC and A1N powdersTREFILOV, V. I; MOROZOV, I. A; MOROZOVA, R. A et al.International journal of hydrogen energy. 1996, Vol 21, Num 11-12, pp 1097-1099, issn 0360-3199Conference Paper

  • Page / 212