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Results 1 to 25 of 8115

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Fabrication of low-threshold AlGaAs/GaAs patterned quantum well laser grown on Si substrateHASEGAWA, Y; EGAWA, T; JIMBO, T et al.Japanese journal of applied physics. 1993, Vol 32, Num 7B, pp L997-L999, issn 0021-4922, 2Article

Electrical readout of the local nuclear polarization in the quantum hall effect : A hyperfine batteryWÜRTZ, A; MÜLLER, T; LORKE, A et al.Physical review letters. 2005, Vol 95, Num 5, pp 056802.1-056802.4, issn 0031-9007Article

Photoconductivity of regular low dimensional arrays of GaAs wiresKSENEVICH, V. K; VALUSIS, G; ROSKOS, H. G et al.Materials science forum. 2002, pp 87-90, issn 0255-5476, isbn 0-87849-890-7Conference Paper

Observation of giant magnetoresistances in hybrid semiconductor/ferromagnetic devicesOVEREND, N; NOGARET, A; GALLAGHER, B. L et al.Journal of magnetism and magnetic materials. 1998, Vol 177-81, pp 898-899, issn 0304-8853, 2Conference Paper

Short-wavelength intersubband staircase lasers, with and without AlAs-blocking barriersFRIEDRICH, A; BOEHM, G; AMANN, M. C et al.Semiconductor science and technology. 2007, Vol 22, Num 3, pp 218-221, issn 0268-1242, 4 p.Article

Wavelength tuning of InAs/InAlGaAs quantum-dash-in-well laser using postgrowth intermixingDJIE, H. S; WANG, Y; CHANG, W. H et al.Electronics Letters. 2007, Vol 43, Num 1, pp 33-35, issn 0013-5194, 3 p.Article

Electrical control of the uncertainty in the time of single photon emission eventsBENNETT, A. J; UNITT, D. C; SEE, P et al.Physical review B. Condensed matter and materials physics. 2006, Vol 72, Num 3, pp 033316.1-033316.4, issn 1098-0121Article

Aharonov-Bohm electron interferometer in the integer quantum Hall regimeCAMINO, F. E; ZHOU, W; GOLDMAN, V. J et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 15, pp 155313.1-155313.6, issn 1098-0121Article

Nonparabolic band effects in GaAs/AlxGa1-xAs quantum dots and ultrathin quantum wellsSCHILDERMANS, N; HAYNE, M; MOSHCHALKOV, V. V et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 11, pp 115312.1-115312.5, issn 1098-0121Article

Calculation of the efficiency of multicell cascade solar cells in the GaAs-AlGaAs systemMIRZABAEV, M; RASULOV, K; ABAKUMOV, A. A et al.Applied solar energy. 2001, Vol 37, Num 1, pp 15-19, issn 0003-701XArticle

Lateral oxidation of AlAs layers at elevated water vapour pressure using a closed-chamber systemCHOE, Joong-Seon; PARK, Si-Hyun; CHOE, Byung-Doo et al.Semiconductor science and technology. 2000, Vol 15, Num 10, pp L35-L38, issn 0268-1242Article

Raman response of (11N)-oriented GaAs/AlAs superlattices within the framework of the bond polarizability modelCASTRILLO, P; ARMELLES, G; BARBOLLA, J et al.Solid state communications. 1996, Vol 98, Num 4, pp 307-311, issn 0038-1098Article

A new method for the determination of the interstitial site occupancy of carbon atoms at trace levels in the MO-VPE Ga1-xAlaAs latticeMISDAQ, M. A; ELASSALI, R; CHARIK, R et al.Journal of radioanalytical and nuclear chemistry. 1995, Vol 189, Num 2, pp 277-282, issn 0236-5731Article

Effect of growth interruption on performance of AlGaAs/InGaAs/GaAs quantum well lasersBUGGE, F; BEISTER, G; ERBERT, G et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 907-910, issn 0022-0248Conference Paper

Polarization inversion via parametric scattering in quasi-one-dimensional microcavitiesDASBACH, G; DIEDERICHS, C; TIGNON, J et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 16, pp 161308.1-161308.4, issn 1098-0121Article

Experimental and theoretical studies of a novel hetero-nipi reflection modulatorPOOLE, P. J; PHILLIPS, C. C; ROBERTS, C et al.IEEE journal of quantum electronics. 1994, Vol 30, Num 4, pp 1027-1035, issn 0018-9197Article

A GaAs pressure sensor based on resonant tunnelling diodesFOBELETS, K; VOUNCKX, R; BORGHS, G et al.Journal of micromechanics and microengineering (Print). 1994, Vol 4, Num 3, pp 123-128, issn 0960-1317Article

Dependence of window effects on Al content of a window layer in high-power AlGaAs window structure lasers with window grown on facetsMATSUMOTO, M; SASAKI, K; KONDO, M et al.Journal of applied physics. 1993, Vol 74, Num 2, pp 809-812, issn 0021-8979Article

Index of refraction of AlAs-GaAs superlatticesLEBURTON, J. P; HESS, K; HOLONYAK, N. JR et al.Journal of applied physics. 1983, Vol 54, Num 7, pp 4230-4231, issn 0021-8979Article

BREVET 2.316.190 (A1) (76 18677). - 18 JUIN 1976. STABILISATION D'ARSENIURE D'ALUMINIUM.sdPatent

High-efficiency native-oxide-passivated high-index-contrast ridge waveguide lasersLIANG, D; WANG, J; HALL, D. C et al.Electronics Letters. 2006, Vol 42, Num 6, pp 349-350, issn 0013-5194, 2 p.Article

A GaAs/AlGaAs-based refractometer platform for integrated optical sensing applicationsMAISENHÖLDER, B; ZAPPE, H. P; KUNZ, R. E et al.Sensors and actuators. B, Chemical. 1997, Vol 39, Num 1-3, pp 324-329, issn 0925-4005Conference Paper

Laser operation-induced migration of beryllium at mirrors of GaAs/AlGaAs laser diodesJAKUBOWICZ, A; OOSENBRUG, A; FORSTER, T et al.Applied physics letters. 1993, Vol 63, Num 9, pp 1185-1187, issn 0003-6951Article

Improved heterointerface and vertical transport in GaAs single quantum well confined by all-binary GaAs/AlAs short-period-superlatticesFUJIWARA, K; DE MIGUEL, J. L; PLOOG, K et al.Japanese journal of applied physics. 1985, Vol 24, Num 6, pp L405-L407, issn 0021-4922Article

Characterization of GaAs-AlAs superlattices by laser-Raman spectroscopyKUBOTA, K; NAKAYAMA, M; KATOH, H et al.Solid state communications. 1984, Vol 49, Num 2, pp 157-159, issn 0038-1098Article

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