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Enhancing the light emission of AlGaAs-based LEDs through single gold nanoparticlesGÖHLER, Tino; HILLE, Andreas; GRAFSTRÖM, Stefan et al.Journal of the Optical Society of America. B, Optical physics (Print). 2011, Vol 28, Num 4, pp 851-855, issn 0740-3224, 5 p.Article

Identification of the active photo-excited carrier in reverse biased quantum dot resonant tunneling diodeWANGPING WANG; WENXIN WANG; HONG CHEN et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7658, issn 0277-786X, isbn 978-0-8194-8088-0, 76581C.1-76581C.7, 2Conference Paper

Fabrication of low-threshold AlGaAs/GaAs patterned quantum well laser grown on Si substrateHASEGAWA, Y; EGAWA, T; JIMBO, T et al.Japanese journal of applied physics. 1993, Vol 32, Num 7B, pp L997-L999, issn 0021-4922, 2Article

Femtosecond tuning of Cr:colquiriite lasers with AlGaAs-based saturable Bragg reflectorsDEMIRBAS, Umit; PETRICH, Gale S; DUO LI et al.Journal of the Optical Society of America. B, Optical physics (Print). 2011, Vol 28, Num 5, pp 986-993, issn 0740-3224, 8 p.Article

Pulsed- and continuous-wave difference-frequency generation in AlGaAs Bragg reflection waveguidesHAN, J. B; KANG, D. P; ABOLGHASEM, P et al.Journal of the Optical Society of America. B, Optical physics (Print). 2010, Vol 27, Num 12, pp 2488-2494, issn 0740-3224, 7 p.Article

Difference-frequency generation in AlGaAs Bragg reflection waveguidesHAN, Jun-Bo; ABOLGHASEM, Payam; DONGPENG KANG et al.Optics letters. 2010, Vol 35, Num 14, pp 2334-2336, issn 0146-9592, 3 p.Article

Index of refraction of AlAs-GaAs superlatticesLEBURTON, J. P; HESS, K; HOLONYAK, N. JR et al.Journal of applied physics. 1983, Vol 54, Num 7, pp 4230-4231, issn 0021-8979Article

Improved heterointerface and vertical transport in GaAs single quantum well confined by all-binary GaAs/AlAs short-period-superlatticesFUJIWARA, K; DE MIGUEL, J. L; PLOOG, K et al.Japanese journal of applied physics. 1985, Vol 24, Num 6, pp L405-L407, issn 0021-4922Article

Characterization of GaAs-AlAs superlattices by laser-Raman spectroscopyKUBOTA, K; NAKAYAMA, M; KATOH, H et al.Solid state communications. 1984, Vol 49, Num 2, pp 157-159, issn 0038-1098Article

Electrical readout of the local nuclear polarization in the quantum hall effect : A hyperfine batteryWÜRTZ, A; MÜLLER, T; LORKE, A et al.Physical review letters. 2005, Vol 95, Num 5, pp 056802.1-056802.4, issn 0031-9007Article

Photoconductivity of regular low dimensional arrays of GaAs wiresKSENEVICH, V. K; VALUSIS, G; ROSKOS, H. G et al.Materials science forum. 2002, pp 87-90, issn 0255-5476, isbn 0-87849-890-7Conference Paper

Observation of giant magnetoresistances in hybrid semiconductor/ferromagnetic devicesOVEREND, N; NOGARET, A; GALLAGHER, B. L et al.Journal of magnetism and magnetic materials. 1998, Vol 177-81, pp 898-899, issn 0304-8853, 2Conference Paper

160 GHz harmonic mode-locked AlGaInAs 1.55 μm strained quantum-well compound-cavity laserLIANPING HOU; HAJI, Mohsin; DYLEWICZ, Rafal et al.Optics letters. 2010, Vol 35, Num 23, pp 3991-3993, issn 0146-9592, 3 p.Article

Short-wavelength intersubband staircase lasers, with and without AlAs-blocking barriersFRIEDRICH, A; BOEHM, G; AMANN, M. C et al.Semiconductor science and technology. 2007, Vol 22, Num 3, pp 218-221, issn 0268-1242, 4 p.Article

Wavelength tuning of InAs/InAlGaAs quantum-dash-in-well laser using postgrowth intermixingDJIE, H. S; WANG, Y; CHANG, W. H et al.Electronics Letters. 2007, Vol 43, Num 1, pp 33-35, issn 0013-5194, 3 p.Article

Electrical control of the uncertainty in the time of single photon emission eventsBENNETT, A. J; UNITT, D. C; SEE, P et al.Physical review B. Condensed matter and materials physics. 2006, Vol 72, Num 3, pp 033316.1-033316.4, issn 1098-0121Article

Aharonov-Bohm electron interferometer in the integer quantum Hall regimeCAMINO, F. E; ZHOU, W; GOLDMAN, V. J et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 15, pp 155313.1-155313.6, issn 1098-0121Article

Nonparabolic band effects in GaAs/AlxGa1-xAs quantum dots and ultrathin quantum wellsSCHILDERMANS, N; HAYNE, M; MOSHCHALKOV, V. V et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 11, pp 115312.1-115312.5, issn 1098-0121Article

Calculation of the efficiency of multicell cascade solar cells in the GaAs-AlGaAs systemMIRZABAEV, M; RASULOV, K; ABAKUMOV, A. A et al.Applied solar energy. 2001, Vol 37, Num 1, pp 15-19, issn 0003-701XArticle

Lateral oxidation of AlAs layers at elevated water vapour pressure using a closed-chamber systemCHOE, Joong-Seon; PARK, Si-Hyun; CHOE, Byung-Doo et al.Semiconductor science and technology. 2000, Vol 15, Num 10, pp L35-L38, issn 0268-1242Article

Raman response of (11N)-oriented GaAs/AlAs superlattices within the framework of the bond polarizability modelCASTRILLO, P; ARMELLES, G; BARBOLLA, J et al.Solid state communications. 1996, Vol 98, Num 4, pp 307-311, issn 0038-1098Article

Effect of growth interruption on performance of AlGaAs/InGaAs/GaAs quantum well lasersBUGGE, F; BEISTER, G; ERBERT, G et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 907-910, issn 0022-0248Conference Paper

High-efficiency native-oxide-passivated high-index-contrast ridge waveguide lasersLIANG, D; WANG, J; HALL, D. C et al.Electronics Letters. 2006, Vol 42, Num 6, pp 349-350, issn 0013-5194, 2 p.Article

Laser operation-induced migration of beryllium at mirrors of GaAs/AlGaAs laser diodesJAKUBOWICZ, A; OOSENBRUG, A; FORSTER, T et al.Applied physics letters. 1993, Vol 63, Num 9, pp 1185-1187, issn 0003-6951Article

Quantum-Cascade Lasers with Emission Wavelength 3—5 μmMASSELINK, W. T; SEMTSIV, M. P.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7836, issn 0277-786X, isbn 978-0-8194-8354-6, 78360U.1-78360U.6Conference Paper

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