Synthesis of a thermally stable mesoporous aluminophosphate by using sodium aluminate as precursorHO, Li-Ngee; YUKUSHIMA, Shiro; MORIKAWA, Rie et al.Colloids and surfaces. A, Physicochemical and engineering aspects. 2005, Vol 268, Num 1-3, pp 40-44, issn 0927-7757, 5 p.Article

Twin derivatives containing two 9-alkylcarbazol-3-yl fragments as new electro-active materials for organic light-emitting diodesKRUCAITE, G; GRINIENE, R; TOMKEVICIENE, A et al.Optical materials (Amsterdam). 2013, Vol 36, Num 2, pp 444-448, issn 0925-3467, 5 p.Article

Preparation of self-supporting NaA zeolite membranes using geopolymersYAN HE; CUI, Xue-Min; LIU, Xing-Dong et al.Journal of membrane science (Print). 2013, Vol 447, pp 66-72, issn 0376-7388, 7 p.Article

Analysis of Integrated Solenoid Inductor With Closed Magnetic CoreWRIGHT, Joyce M; DOK WON LEE; MOHAN, Anuraag et al.IEEE transactions on magnetics. 2010, Vol 46, Num 6, pp 2387-2390, issn 0018-9464, 4 p.Conference Paper

A new approach for the description of the initial-stage kinetics during amorphous materials sinteringRISTIC, M. M; DRAGOJEVIC-NESIC, M. J.Powder technology. 1987, Vol 49, Num 2, pp 189-190, issn 0032-5910Article

Proceedings of the 12th International Conference on the Structure of Non-Crystalline Materials (NCM 12), Riva del Garda - Trento, Italy, July 7-12, 2013DALBA, Giuseppe; ROCCA, Francesco.Journal of non-crystalline solids. 2014, Vol 401, issn 0022-3093, 266 p.Conference Proceedings

An explanation of anomalous diffusion patterns observed in electroactive materials by impedance methodsBISQUERT, Juan; GARCIA-BELMONTE, Germa; PITARCH, Angeles et al.ChemPhysChem (Print). 2003, Vol 4, Num 3, pp 287-292, issn 1439-4235, 6 p.Article

Raman scattering diagnostics of the structure of hydrogenated amorphous diamond-like carbon filmsVALAKH, M. Ya; VASYLYK, O. V; GONTAR, A. G et al.SPIE proceedings series. 1998, pp 363-368, isbn 0-8194-2808-6Conference Paper

Adhesion measurements of non-crystalline diamond films prepared by a laser plasma discharge sourceDAVANLOO, F; LEE, T. J; PARK, H et al.Journal of adhesion science and technology. 1993, Vol 7, Num 12, pp 1323-1334, issn 0169-4243Article

THRESHOLD VOLTAGE CONTROL METHOD FOR AMORPHOUS SWITCHES.HOLLAND PA; HUGHES AJ.1977; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1977; VOL. 23; NO 3; PP. 305-314; BIBL. 5 REF.Article

MECANISME DU PHENOMENE DE MEMOIRE DANS LES MATERIAUX AMORPHES EVAPORESFUKUZAWA M; SAKAMOTO N.1977; OYO BUTURI; JAP.; DA. 1977; VOL. 46; NO 7; PP. 690-694; ABS. ANGL.; BIBL. 15 REF.Article

NUCLEATION THEORY OF THRESHOLD SWITCHING IN VANADATE-GLASS DEVICESGATTEF E; DIMITRIEV Y.1981; PHILOS. MAG., B; ISSN 0141-8637; GBR; DA. 1981; VOL. 43; NO 2; PP. 333-343; BIBL. 34 REF.Article

SCHALTMECHANISMEN AMORPHER SILBERMETAPHOSPHAT-SPEICHERELEMENTE MIT NIEDRIGER SCHALTFELDSTAERKE = MECANISMES DE COMMUTATION D'ELEMENTS DE MEMOIRE AU METAPHOSPHATE D'ARGENT AMORPHE SOUS L'ACTION DE CHAMPS FAIBLESKAES HH; HERWIG H.1978; SCI. ELECTR.; CHE; DA. 1978; VOL. 24; NO 4; PP. 124-135; ABS. ENG; BIBL. 22 REF.Article

How to measure atomic diffusion processes in the sub-nanometer rangeSCHMIDT, H; GUPTA, M; GUTBERLET, T et al.Acta materialia. 2008, Vol 56, Num 3, pp 464-470, issn 1359-6454, 7 p.Article

ORIGIN OF AMORPHOUS INTERSTELLAR GRAINSSEKI J; HASEGAWA H.1981; PROG. THEOR. PHYS.; ISSN 0033-068X; JPN; DA. 1981; VOL. 66; NO 3; PP. 903-912; BIBL. 22 REF.Article

BIPOLAR THRESHOLD SWITCHING IN VANADATE GLASSESDIMITRIEV Y; GATTEF E; ENEVA A et al.1981; INT. J. ELECTRON. THEOR. EXP.; ISSN 0020-7217; GBR; DA. 1981; VOL. 50; NO 5; PP. 385-394; BIBL. 2 P.Article

MODIFICATIONS DE STRUCTURE DANS LES VERRES CHALCOGENES SEMICONDUCTEURS DU SYSTEME SI-TE ET LEUR RELATION AVEC L'EFFET DE MEMOIREALTUNYAN SA; MINAEV VS.1977; IZVEST. AKAD. NAUK ARM. S.S.R., FIZ.; S.S.S.R.; DA. 1977; VOL. 12; NO 5; PP. 378-382; ABS. ARM. ANGL.; BIBL. 8 REF.Article

FORTSCHRITTE UND ENTWICKLUNGSTENDENZEN IN DER TROCKNUNGSTECHNIK BEI DER TROCKNUNG FORMLOSER GUETER. = PROGRESS AND DEVELOPMENT TRENDS IN THE DRYING TECHNIQUE OF AMORPHOUS MATERIALS = PROGRES ET TENDANCES DE DEVELOPPEMENT DANS LA TECHNIQUE DU SECHAGE DES MATIERES AMORPHESSTOCKBURGER D.1975; V.D.I. BER.; DTSCH.; DA. 1975 PARU 1976; NO 260; PP. 41-47; BIBL. 6 REF.Article

Electronic transport in Ru-Si-O and Ir-Si-O amorphous thin filmsGOTTLIEB, U; LABORDE, O; GIAUQUE, P. H et al.Microelectronic engineering. 2002, Vol 60, Num 1-2, pp 107-111, issn 0167-9317Conference Paper

Dielectric relaxation behavior of amorphous polymers and related materialsWILLIAMS, G.IEEE transactions on electrical insulation. 1985, Vol 20, Num 5, pp 843-857, issn 0018-9367Article

Opportunities in magnetic materialsWHITE, R. M.Science (Washington, D.C.). 1985, Vol 229, Num 4708, pp 11-16, issn 0036-8075Article

Electrical properties of light-addressed sub-μm electrodes fabricated by use of nanostencil-technologyBUCHER, Volker; BRUGGER, Jürgen; KERN, Dieter et al.Microelectronic engineering. 2002, Vol 61-62, pp 971-980, issn 0167-9317Conference Paper

Thermal studies of a-Ga₂₀Se_80-xTe_x semiconducting alloysZULFEQAUR, M; KHAN, Z. H; HUSAIN, M et al.SPIE proceedings series. 1998, pp 1291-1294, isbn 0-8194-2756-X, 2VolConference Paper

Accumulation d'une charge anodique photo-induite dans les couches amorphesPOZNYAK, S. K; KULAK, A. I.Èlektrohimiâ. 1989, Vol 25, Num 1, pp 129-131, issn 0424-8570Article

Nanostructure of a-C:N films characterised by Raman spectroscopyVASIN, A. V; VASYLYK, O. V; MATVEEVA, L. A et al.SPIE proceedings series. 1998, pp 359-362, isbn 0-8194-2808-6Conference Paper