kw.\*:("Amorphous semiconductors")
Results 1 to 25 of 841
Selection :
The future of phase-change semiconductor memory devicesHUDGENS, Stephen J.Journal of non-crystalline solids. 2008, Vol 354, Num 19-25, pp 2748-2752, issn 0022-3093, 5 p.Conference Paper
AC/DC Rectification With Indium Gallium Oxide Thin-Film TransistorsMCFARLANE, Brian R; KURAHASHI, Peter; HEINECK, Daniel P et al.IEEE electron device letters. 2010, Vol 31, Num 4, pp 314-316, issn 0741-3106, 3 p.Article
All-optical actuation of amorphous chalcogenide-coated cantileversSTUCHLIK, M; ELLIOTT, S. R.Journal of non-crystalline solids. 2007, Vol 353, Num 3, pp 250-262, issn 0022-3093, 13 p.Article
Amorphous silicon : From doping to multi-billion dollar applicationsMADAN, Arun.Journal of non-crystalline solids. 2006, Vol 352, Num 9-20, pp 881-886, issn 0022-3093, 6 p.Conference Paper
Scattering and movement asymmetry in the one-dimensional lucky-drift simulation of the avalanche processes in disordered semiconductorsJANDIERI, K; RUBEL, O; BARANOVSKII, S. D et al.Journal of non-crystalline solids. 2008, Vol 354, Num 19-25, pp 2657-2661, issn 0022-3093, 5 p.Conference Paper
The science of atomic engineering of chalcogenide glasses : Amorphous semiconductors and phase-change materialsOVSHINSKY, Stanford.Physica status solidi. B. Basic research. 2009, Vol 246, Num 8, pp 1741-1743, issn 0370-1972, 3 p.Article
Uncooled amorphous silicon 1/4VGA IRFPA with 25 μm pixel-pitch for High End applicationsMINASSIAN, C; TISSOT, J. L; VILAIN, M et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7113, issn 0277-786X, isbn 978-0-8194-7345-5 0-8194-7345-6, 1Vol, 711303.1-711303.6Conference Paper
High-performance uncooled amorphous silicon TEC less XGA IRFPA with 17μm pixel-pitchTROUILLEAU, C; FIEQUE, B; YON, Jj et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7298, issn 0277-786X, isbn 978-0-8194-7564-0 0-8194-7564-5, 72980Q.1-72980Q.6, 2Conference Paper
On-chip parametric amplification with 26.5 dB gain at telecommunication wavelengths using CMOS-compatible hydrogenated amorphous silicon waveguidesKUYKEN, Bart; CLEMMEN, Stéphane; SHANKAR KUMAR SELVARAJA et al.Optics letters. 2011, Vol 36, Num 4, pp 552-554, issn 0146-9592, 3 p.Article
Uncooled amorphous silicon TEC-less 1 VGA IRFPA with 25μm pixel-pitch for high volume applicationsDURAND, A; MINASSIAN, C; TISSOT, J. L et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7298, issn 0277-786X, isbn 978-0-8194-7564-0 0-8194-7564-5, 72982B.1-72982B.7, 2Conference Paper
Amorphous and Nanocrystalline Semiconductors - Science and Technology. Proceedings of the Twenty Second International Conference on Amorphous and Nanocrystalline SemiconductorsJournal of non-crystalline solids. 2008, Vol 354, Num 19-25, issn 0022-3093, 863 p.Conference Proceedings
The Meyer―Neldel rule for dc activation processes in mixed isoelectronic chalcogens systemsKOTKATA, M. F.Journal of non-crystalline solids. 2012, Vol 358, Num 2, pp 420-426, issn 0022-3093, 7 p.Article
Incorporation of Bi, Cd and Zn on the optical properties of Ge20Se80 thin filmsALY, K. A; AFIFY, N; ABOUSHLY, A. M et al.Physica. B, Condensed matter. 2010, Vol 405, Num 7, pp 1846-1851, issn 0921-4526, 6 p.Article
Steady state and transient photoconductivity measurements in a-Se90-xSb10Inx thin filmsKAMBOJ, Maninder; MOHAMMADI, Farah.Thin solid films. 2010, Vol 518, Num 5, pp 1585-1589, issn 0040-6090, 5 p.Article
Transition from amorphous semiconductor to amorphous insulator in hydrogenated carbon-germanium films investigated by IR spectroscopyKAZIMIERSKI, P; JOZWIAK, L.Journal of non-crystalline solids. 2009, Vol 355, Num 4-5, pp 280-286, issn 0022-3093, 7 p.Article
Analysis of lifetime distribution of defect luminescence in hydrogenated amorphous siliconOGIHARA, C; YU, X; MORIGAKI, K et al.Journal of non-crystalline solids. 2008, Vol 354, Num 19-25, pp 2121-2125, issn 0022-3093, 5 p.Conference Paper
Low-temperature Er3+ emission in Ge-S-Ga glasses excited by host absorptionIVANOVA, Z. G; ANEVA, Z; GANESAN, R et al.Journal of non-crystalline solids. 2007, Vol 353, Num 13-15, pp 1418-1421, issn 0022-3093, 4 p.Conference Paper
Holographic recording in amorphous chalcogenide thin filmsTETERIS, J; REINFELDE, Mara.Journal of non-crystalline solids. 2007, Vol 353, Num 13-15, pp 1450-1453, issn 0022-3093, 4 p.Conference Paper
Mass transport in chalcogenide electrolyte films - : materials and applicationsKOZICKI, Michael N; MITKOVA, Maria.Journal of non-crystalline solids. 2006, Vol 352, Num 6-7, pp 567-577, issn 0022-3093, 11 p.Conference Paper
Experimental evidence for extended hydrogen diffusion in silicon thin films during light-soakingKAIL, F; FELLAH, S; ABRAMOV, A et al.Journal of non-crystalline solids. 2006, Vol 352, Num 9-20, pp 1083-1086, issn 0022-3093, 4 p.Conference Paper
Light induced degradation of microcrystalline silicon solar cellsYAN WANG; XIAOYAN HAN; FENG ZHU et al.Journal of non-crystalline solids. 2006, Vol 352, Num 9-20, pp 1909-1912, issn 0022-3093, 4 p.Conference Paper
Simulation of phase-change processes in non-volatile memory cellsPOPOV, A. I; SAVINOV, I. S; VORONKOV, E. N et al.Journal of non-crystalline solids. 2006, Vol 352, Num 9-20, pp 1624-1627, issn 0022-3093, 4 p.Conference Paper
Light-induced creation of hydrogen-pairs in a-Si:HMORIGAKI, K; HIKITA, H.Solid state communications. 2005, Vol 136, Num 11-12, pp 616-620, issn 0038-1098, 5 p.Article
Photoexcitation-induced processes in amorphous semiconductorsSINGH, Jai.Applied surface science. 2005, Vol 248, Num 1-4, pp 50-55, issn 0169-4332, 6 p.Conference Paper
Light structured deposition (2): Material optical functionalityGONZALEZ-LEAL, J. M; GAMEZ, A. J; ANGEL, J. A et al.Journal of non-crystalline solids. 2009, Vol 355, Num 37-42, pp 1966-1968, issn 0022-3093, 3 p.Conference Paper