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About the origin of the boson peak in vitreous silicaDUVAL, E; MERMET, A; LE PARC, R et al.Philosophical magazine (2003. Print). 2004, Vol 84, Num 13-16, pp 1433-1436, issn 1478-6435, 4 p.Conference Paper

Electronic density of states in amorphous seleniumBENKHEDIR, M. L; BRINZA, M; ADRIAENSSENS, G. J et al.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 44, pp S5253-S5264, issn 0953-8984Conference Paper

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Influence of light-soaking and annealing on the microstructure of a-Si:H deposited at 423 KROY, D; LONGEAUD, C; SAADANE, O et al.Journal of non-crystalline solids. 2002, Vol 299302, pp 511-515, issn 0022-3093, aConference Paper

Amorphous morphology, thermal stability and electronic structure of non-crystalline transition-metal elemental and binary oxides, and chalcogenidesLUCOVSKY, Gerald.Journal of non-crystalline solids. 2002, Vol 299302, pp 231-237, issn 0022-3093, aConference Paper

Sensitivity of solutions of Poisson's equation to boundary values in p-type a-Si:H thin filmsPRENTICE, J. S. C.Semiconductor science and technology. 2001, Vol 16, Num 3, pp 151-154, issn 0268-1242Article

Electron density distribution in amorphous Se determined by reverse Monte Carlo simulation coupled with anomalous X-ray scattering dataSAITO, Masatoshi; WASEDA, Yoshio.Materials transactions - JIM. 2001, Vol 42, Num 10, pp 2071-2074, issn 0916-1821Article

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Evolution with light-soaking of polymorphous material prepared at 423 KROY, D; LONGEAUD, C; SAADANE, O et al.Journal of non-crystalline solids. 2002, Vol 299302, pp 482-486, issn 0022-3093, aConference Paper

Density of states and σ-π mixing in hydrogenated amorphous carbon filmsFANCHINI, G; PARET, V; TAGLIAFERRO, A et al.Journal of non-crystalline solids. 2002, Vol 299302, pp 858-863, issn 0022-3093, bConference Paper

Electronic states and the light-induced metastability in hydrogenated amorphous silicon prepared by hot-wire CVDDAXING HAN; GUOZHEN YUE; HABUCHIH, H et al.Thin solid films. 2001, Vol 395, Num 1-2, pp 134-137, issn 0040-6090Conference Paper

Determination of the hydrogen density of states in amorphous hydrogenated siliconJACKSON, W. B; FRANZ, A. J; JIN, H.-C et al.Journal of non-crystalline solids. 1998, Vol 227-30, pp 143-147, issn 0022-3093, aConference Paper

Diamond-like hydrogenated amorphous carbon films studied by X-ray emission spectroscopyWIECH, G; AUER, N; SIMUNEK, A et al.Diamond and related materials. 1997, Vol 6, Num 8, pp 944-951, issn 0925-9635Article

The influence of the distribution of potential fluctuations on the distribution of states in amorphous semiconductorsO'LEARY, S. K; LIM, P. K.Solid state communications. 1997, Vol 101, Num 7, pp 513-517, issn 0038-1098Article

Electronic states of binary tellurite glassesKOWADA, Y; MORIMOTO, K; ADACHI, H et al.Journal of non-crystalline solids. 1996, Vol 196, Num 1-3, pp 204-209, issn 0022-3093Conference Paper

Mössbauer spectra of tin in binary Si-Sn oxide glassesWILLIAMS, K. F. E; JOHNSON, C. E; JOHNSON, J. A et al.Journal of physics. Condensed matter (Print). 1995, Vol 7, Num 49, pp 9485-9497, issn 0953-8984Article

Determination of the electric charge distribution in an amorphous material. II. Evaluation of the Madelung potentials and computation of the electric chargesSPERANZA, G.Journal of non-crystalline solids. 2004, Vol 341, Num 1-3, pp 10-15, issn 0022-3093, 6 p.Article

Electronic structure of amorphous germanium disulfide via density-functional molecular dynamics simulationsBLAINEAU, Sébastien; JUND, Philippe.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 18, pp 184210.1-184210.7, issn 1098-0121, 2Article

Optical spectra of amorphous and polycrystalline beryllium oxide over a wide energy range of fundamental absorptionSOBOLEV, V. Val; MORDAS, D. O; SOBOLEV, V. V et al.Glass physics and chemistry. 2003, Vol 29, Num 4, pp 353-359, issn 1087-6596, 7 p.Article

Density of electronic states in amorphous carbonsFANCHINI, G; RAY, S. C; TAGLIAFERRO, A et al.Diamond and related materials. 2003, Vol 12, Num 3-7, pp 891-899, issn 0925-9635, 9 p.Conference Paper

Probing localized states distributions in semiconductors by Laplace transform transient photocurrent spectroscopyGUEORGUIEVA, M. J; MAIN, C; REYNOLDS, S et al.Journal of non-crystalline solids. 2002, Vol 299302, pp 541-545, issn 0022-3093, aConference Paper

A small cluster approach for the electronic density of states in amorphous germaniumGRADO-CAFFARO, M. A; GRADO-CAFFARO, M.Active and passive electronic components. 1998, Vol 20, Num 3, pp 147-150, issn 0882-7516Article

Effect of melt temperature and quenching rate on the electronic structure of a Ni81P19 alloyBAYANKIN, V. YA; LAD'ANOV, V. I; TRAPEZNIKOV, V. A et al.Physics of metals and metallography. 1996, Vol 82, Num 1, pp 58-61, issn 0031-918XArticle