Pascal and Francis Bibliographic Databases

Help

Search results

Your search

ti.\*:("Amorphous semiconductors - Science and technology")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 925

  • Page / 37
Export

Selection :

  • and

Amorphous semiconductors. Science and technologyELLIOTT, Stephen R; DAVIS, Edward A; ROBERTSON, John et al.Journal of non-crystalline solids. 1993, Vol 164-66, issn 0022-3093, 1Conference Proceedings

Amorphous semiconductors - Science and technologySHIMIZU, Tatsuo; YONEZAWA, Fumiko; NITTA, Shoji et al.Journal of non-crystalline solids. 1996, Vol 198200, issn 0022-3093, 667 p., 2Conference Proceedings

Amorphous semiconductors - Science and technologySHIMIZU, Tatsuo; YONEZAWA, Fumiko; NITTA, Shoji et al.Journal of non-crystalline solids. 1996, Vol 198200, issn 0022-3093, 647 p., 1Conference Proceedings

Hydrogen in siliconDAVIES, E. A.Journal of non-crystalline solids. 1996, Vol 198200, pp 1-10, issn 0022-3093, 1Conference Paper

Amorphous semiconductors-science and technologyELLIOTT, Stephen R; DAVIS, Edward A; ROBERTSON, John et al.Journal of non-crystalline solids. 1993, Vol 164-66, issn 0022-3093, 701 p., 2Conference Proceedings

Behavior of surface hydrogen on a-Ge:HTOYOSHIMA, Y; MATSUDA, A; ARAI, K et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 1042-1045, issn 0022-3093, 2Conference Paper

Einstein's relationship for hopping electronsBARANOVSKII, S. D; FABER, T; HENSEL, F et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 214-217, issn 0022-3093, 1Conference Paper

Phonon-assisted luminescence excitation in porous siliconMURAYAMA, K; KOMATSU, H; MIYAZAKI, S et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 953-956, issn 0022-3093, 2Conference Paper

Preparation and properties of a-Ge1-xNxYOKOMICHI, H; OKINA, T; KONDO, M et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 379-382, issn 0022-3093, 1Conference Paper

Structural heterogeneity in nitrogen-rich a-SiNx:HHAYASHI, H; MATSUMOTO, S; NAKAYAMA, Y et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 15-18, issn 0022-3093, 1Conference Paper

Tetrahedrally bonded amorphous carbonMILNE, W. I.Journal of non-crystalline solids. 1996, Vol 198200, pp 605-610, issn 0022-3093, 2Conference Paper

Diffusion of lithium and hydrogen in hydrogenated amorphous siliconBEYER, W; ZASTROW, U.Journal of non-crystalline solids. 1993, Vol 164-66, pp 289-292, issn 0022-3093, 1Conference Paper

Effect of deposition temperature on disorder in InPBAYLISS, S. C; BAKER, S. H; BATES, J. S et al.Journal of non-crystalline solids. 1993, Vol 164-66, pp 143-146, issn 0022-3093, 1Conference Paper

Effect of the deposition variables on amorphous silicon stabilityBUITRAGO, R. H; ARCE, R. D; KOROPECKI, R. R et al.Journal of non-crystalline solids. 1993, Vol 164-66, pp 259-262, issn 0022-3093, 1Conference Paper

Interstitial hydrogen in silicon : a theoretical studyCOLLE, R; STAVREV, K.Journal of non-crystalline solids. 1993, Vol 164-66, pp 293-296, issn 0022-3093, 1Conference Paper

Optically detected ESR studies of a-Si:HMAO, D; TAYLOR, P. C.Journal of non-crystalline solids. 1993, Vol 164-66, pp 367-370, issn 0022-3093, 1Conference Paper

Structural and electronic properties of amorphous SiGe:H alloysPAUL, W; CHEN, J. H; LIU, E. Z et al.Journal of non-crystalline solids. 1993, Vol 164-66, pp 1-10, issn 0022-3093, 1Conference Paper

Defect-pool model for doped a-Si:HSCHMAL, J.Journal of non-crystalline solids. 1996, Vol 198200, pp 387-390, issn 0022-3093, 1Conference Paper

Phenomenological scaling of optical absorption in amorphous semiconductorsOKAMOTO, H; HATTORI, K; HAMAKAWA, Y et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 124-127, issn 0022-3093, 1Conference Paper

Visible room-temperature photoluminescence from oxidized germaniumCHEN, J. H; PANG, D; WICKBOLT, P et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 128-131, issn 0022-3093, 1Conference Paper

Effective temperature for electrons in band tailsBARANOVSKII, S. D; CLEVE, B; HESS, R et al.Journal of non-crystalline solids. 1993, Vol 164-66, pp 437-440, issn 0022-3093, 1Conference Paper

Reconsideration of electron-lattice interaction in amorphous semiconductorsSHINOZUKA, Y.Journal of non-crystalline solids. 1993, Vol 164-66, pp 567-570, issn 0022-3093, 1Conference Paper

Charge carrier transport in diluted hopping systemsARKHIPOV, V. I; BÄSSLER, H.Journal of non-crystalline solids. 1996, Vol 198200, pp 242-245, issn 0022-3093, 1Conference Paper

Defects in magnetron-sputtered a-Ge1-xNx:HMIN, H; UEDA, S; ISHII, N et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 375-378, issn 0022-3093, 1Conference Paper

Excitation spectroscopy of photoinduced absorption in amorphous siliconMALINOVSKY, I; HAJIEV, F; UGUR, S et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 98-102, issn 0022-3093, 1Conference Paper

  • Page / 37