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Firm resurrects low-noise-amplifier lineMicrowaves & RF. 1997, Vol 36, Num 9, issn 0745-2993, p. 186Article

Tieftemperatur-Si-JFET-Vorverstärker für SQUID-Systeme = Préamplificateur à TEC à jonction du silicium, fonctionnant à basse température pour les systèmes SQUIDS = A cryogenic Si-JFET preamplifier for SQUIDSNAWROCKI, W; LITWICKI, Z.Journal of physics. E. Scientific instruments. 1987, Vol 20, Num 11, pp 1424-1425, issn 0022-3735Article

Reliability evaluation and redesign of LNALIN, Wei-Cheng; DU, Long-Jei; KING, Ya-Chin et al.Microelectronics and reliability. 2004, Vol 44, Num 9-11, pp 1727-1732, issn 0026-2714, 6 p.Conference Paper

Cooled low-noise preamplifier for a bolometerGUSH, H. P; HALPERN, M; KNOTEK, S et al.Review of scientific instruments. 1992, Vol 63, Num 1, pp 90-92, issn 0034-6748Conference Paper

32-GHZ cryogenically cooled HEMT low-noise amplifiersDUH, K. H. G; KOPP, W. F; HO, P et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 8, pp 1528-1535, issn 0018-9383, 8 p.Article

94 GHz low-noise HEMTCHAO, P. C; DUH, K. H. G; HO, P et al.Electronics Letters. 1989, Vol 25, Num 8, pp 504-505, issn 0013-5194, 2 p.Article

Design of matching networks for low noise preamplifiersREYKOWSKI, A; WRIGHT, S. M; PORTER, J. R et al.Magnetic resonance in medicine. 1995, Vol 33, Num 6, pp 848-852, issn 0740-3194Article

NJ3600L FET as a very low-noise, cooled amplifier for infrared bolometryLANZI, L; SASSOLI, K; VENTURA, G et al.Cryogenics (Guildford). 1994, Vol 34, Num 11, pp 959-960, issn 0011-2275Article

Projet d'amplificateurs microondes transistorisés à faible bruitPETROV, G. V.Radiotehnika i èlektronika. 1988, Vol 33, Num 5, pp 1036-1041, issn 0033-8494Article

Cheap 0.36 dB NF broadband multipath LNAKRÜGER, P. P.Electronics letters. 2012, Vol 48, Num 6, pp 315-317, issn 0013-5194, 3 p.Article

Concept Study of a Shorted Annular Patch Antenna: Design and Fabrication on a Conducting CylinderMOEMAUT, Gerald J. K; VANDENBOSCH, Guy A. E.IEEE transactions on antennas and propagation. 2011, Vol 59, Num 6, pp 2097-2102, issn 0018-926X, 6 p., 2Article

A CMOS low noise amplifier for biomedical telemetry applicationsMORENO, Robson Luiz; RODRIGUES, Edgar Charry.Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS. 2003, pp 95-98, isbn 0-7803-7066-X, 1Vol, 4 p.Conference Paper

The study of the relation between Rn - Gn noise model and En - In noise model of an amplifierJIANSHENG XU; YISONG DAI; LI YAQEN et al.IEEE transactions on circuits and systems. 1, Fundamental theory and applications. 1998, Vol 45, Num 2, pp 154-156, issn 1057-7122Article

Spurious inductive coupling of a dc-SQUID to a resonant input circuitCASTELLANO, M. G; COSMELLI, C.Journal of applied physics. 1988, Vol 63, Num 6, pp 2015-2020, issn 0021-8979Article

Optimisation of LNA and PA circuits for a 1.8 V BiCMOS Si bluetooth transceiverVAN DER HEIJDEN, Edwin; VEENSTRA, Hugo.Bipolar/BiCMOS Circuits and Technology Meetings. 2004, pp 56-59, isbn 0-7803-8618-3, 1Vol, 4 p.Conference Paper

A dect-/bluetooth multi-standard front-end with adaptive image rejection in 0.18 μm CMOSVIDOJKOVIC, Vojkan; VAN DER TANG, Johan; LEEUWENBURGH, Arjan et al.IEEE International Symposium on Circuits and Systems. 2004, pp 573-576, isbn 0-7803-8251-X, 4 p.Conference Paper

A 35 to 45 GHz low noise or buffer amplifier with wide dynamic rangeMicrowave journal (Euro-global edition). 2003, Vol 46, Num 9, pp 226-228, issn 0192-6217, 2 p.Article

1.5V 1.8GHz bandpass amplifierCHAN, K.-L; DO, M.-A; YEO, K.-S et al.IEE proceedings. Circuits, devices and systems. 2000, Vol 147, Num 6, pp 331-333, issn 1350-2409Article

Noise parameters for design of MMIC HEMT LNAPYNDIAH, R; DESWARTE, A; WOLNY, M et al.Electronics Letters. 1989, Vol 25, Num 7, pp 442-443, issn 0013-5194, 2 p.Article

ETUDE D'UNE INTERFACE RADIO FREQUENCE INTEGREE SUR SILICIUM POUR L'EMISSION ET LA RECEPTION A 2GHz = STUDY ON A RADIO FREQUENCY INTERFACE INTEGRATED ON SILICON FOR 2GHZ SIGNALS TRANSMISSION AND RECEPTIONCartalade, David; Gentil, Pierre.1999, 200 p.Thesis

Conception, réalisation et mesures d'un amplificateur cryogénique faible bruit et faible consommation sur la bande 8-12 GHz = Design, realization and characterization of a low consumption, low noise cryogenic amplifier at 8 - 12 GHzBOUTEZ, C; CROZAT, P; DANELON, V et al.Journées nationales microondes. 1997, pp 500-501, 2VolConference Paper

The design of a low-noise amplifier stageSUNDUCHKOV, K. S; GALITSYN, V. V; TUZENKO, A. P et al.Telecommunications & radio engineering. 1992, Vol 47, Num 7, pp 140-144, issn 0040-2508Article

A graphic design method for matched low-noise amplifiersALBINSSON, B. M.IEEE transactions on microwave theory and techniques. 1990, Vol 38, Num 2, pp 118-122, issn 0018-9480Article

High-performance Ka-band and V-band HEMT low-noise amplifiersDUH, K. H. G; PANE-CHANE CHAO; SMITH, P. M et al.IEEE transactions on microwave theory and techniques. 1988, Vol 36, Num 12, pp 1598-1603, issn 0018-9480Article

A 1-GHz BiCMOS RF front-end ICMEYER, R. G; MACK, W. D.IEEE journal of solid-state circuits. 1994, Vol 29, Num 3, pp 350-355, issn 0018-9200Conference Paper

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