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Understanding defects in semiconductors as key to advancing device technologyWEBER, Eicke R.Physica. B, Condensed matter. 2003, Vol 340-42, pp 1-14, issn 0921-4526, 14 p.Conference Paper

Determination of antisite defects in double perovskite Sr2FeMoO6 by diffraction method : Simulation studiesZHANG, Q; LIU, G. Y; RAO, G. H et al.Solid state communications. 2006, Vol 138, Num 6, pp 294-298, issn 0038-1098, 5 p.Article

Yttrium aluminum garnet Nanoparticles with low antisite Defects studied with neutron and X-ray diffractionYUANHUA SANG; DEHONG YU; AVDEEV, Maxim et al.Journal of solid state chemistry (Print). 2012, Vol 192, pp 366-370, issn 0022-4596, 5 p.Article

On the nature of defect states at interfaces of InAs/AlSb quantum wellsVASILYEV, Yu. B; MELTSER, B. Ya; IVANOV, S. V et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 5150-5152, issn 0921-4526, 3 p.Conference Paper

Octahedral cation antisite disorder effects in double 1:1 perovskites : Monte Carlo simulation study and percolation approachTARASEVICH, Yu. Yu; PANCHENKO, T. V; MANZHOSOVA, E. N et al.Journal de physique. IV. 2005, Vol 126, pp 65-68, issn 1155-4339, 4 p.Conference Paper

Exciton-related luminescence in LuAg:Ce single crystals and single crystalline filmsZORENKO, Yu; GORBENKO, V; VOLOSHINOVSKII, A et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 6, pp 1113-1119, issn 0031-8965, 7 p.Conference Paper

Amphoteric defects in GaAs leading to Fermi-level pinning: A hybrid functional studyCOLLEONI, Davide; PASQUARELLO, Alfredo.Microelectronic engineering. 2013, Vol 109, pp 50-53, issn 0167-9317, 4 p.Article

Nanomanipulation using only mechanical energyDIESKA, Peter; STICH, Ivan; PEREZ, Rubén et al.Physical review letters. 2005, Vol 95, Num 12, pp 126103.1-126103.4, issn 0031-9007Article

Luminescence properties of Y3Al5O12:Ce nanoceramicsZORENKO, Yu; VOZNYAK, T; GORBENKO, V et al.Journal of luminescence. 2011, Vol 131, Num 1, pp 17-21, issn 0022-2313, 5 p.Article

Point defects in thermal GaAs/GaAs-oxide structures probed by electron paramagnetic resonanceNGUYEN, S; STESMANS, A; AFANAS'EV, V. V et al.Microelectronic engineering. 2013, Vol 109, pp 294-297, issn 0167-9317, 4 p.Article

Study on the defects of ZnO nanowireWANG, D. F; ZHANG, T. J.Solid state communications. 2009, Vol 149, Num 43-44, pp 1947-1949, issn 0038-1098, 3 p.Article

Tailoring the visible photoluminescence of mass-produced ZnO nanowiresJINZHANG LIU; LEE, Soonil; AHN, Y. H et al.Journal of physics. D, Applied physics (Print). 2009, Vol 42, Num 9, issn 0022-3727, 095401.1-095401.6Article

Stability and band gaps of InGaAs, BGaAs, and BInGaAs alloys: Density-functional supercell calculationsJENICHEN, Arndt; ENGLER, Cornelia.Physica status solidi. B. Basic research. 2007, Vol 244, Num 6, pp 1957-1963, issn 0370-1972, 7 p.Article

Stability and band gaps of InGaP, basic solid BGaP, and BInGaP alloys: Density-functional supercell calculationsJENICHEN, Arndt; ENGLER, Cornelia.Physica status solidi. B. Basic research. 2010, Vol 247, Num 1, pp 59-66, issn 0370-1972, 8 p.Article

A theoretical study of intrinsic point defects and defect clusters in magnesium aluminate spinelGILBERT, C. A; SMITH, R; KENNY, S. D et al.Journal of physics. Condensed matter (Print). 2009, Vol 21, Num 27, issn 0953-8984, 175406.1-175406.7Article

Free energy and capture cross section of the E2 trap in n-type GaNPERNOT, J; ULZHÖLER, C; MURET, P et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 4, pp 609-613, issn 0031-8965, 5 p.Conference Paper

Point defects in the NiAl(100) surfaceLERCH, D; DÖSSEL, K; HAMMER, L et al.Journal of physics. Condensed matter (Print). 2009, Vol 21, Num 13, issn 0953-8984, 134007.1-134007.6Article

Increasing the Curie temperature of Ca2FeMoO6 double perovskite by introducing near-neighbour antiferromagnetic interactionsRUBI, D; FRONTERA, C; ROIG, A et al.Journal of physics. Condensed matter (Print). 2005, Vol 17, Num 50, pp 8037-8047, issn 0953-8984, 11 p.Article

Surface orientation as a control parameter for the growth of non-stoichiometric gallium arsenideMAREK, T; SCHÜR, C; KUNSAGI-MATE, S et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 15, pp 2980-2991, issn 0031-8965, 12 p.Article

Structural ordering and antisite defect formation in double perovskitesSANYAL, P; TARAT, S; MAJUMDAR, P et al.The European physical journal. B, Condensed matter physics. 2008, Vol 65, Num 1, pp 39-47, issn 1434-6028, 9 p.Article

Agglomeration of As antisites in As-rich low-temperature GaAs : Nucleation without a critical nucleus sizeSTAAB, T. E. M; NIEMINEN, R. M; LUYSBERG, M et al.Physical review letters. 2005, Vol 95, Num 12, pp 125502.1-125502.4, issn 0031-9007Article

Defects in dilute nitridesBUYANOVA, I. A; CHEN, W. M; TU, C. W et al.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 31, pp 3027-3035, issn 0953-8984, 9 p.Article

Compensation in GaAs crystals due to anti-structure disorderFIGIELSKI, T.Applied physics. A, Solids and surfaces. 1984, Vol 35, Num 4, pp 255-261, issn 0721-7250Article

Chemical trends for deep antisite defect levels in III-V compoundsPÖTZ, W; FERRY, D. K.The Journal of physics and chemistry of solids. 1985, Vol 46, Num 9, pp 1101-1108, issn 0022-3697Article

Electroactive and electroinactive dopants in Bi2Te3 and their interaction with antisite defectsCHIZHEVSKAYA, S. N; SHELIMOVA, L. E.Inorganic materials. 1995, Vol 31, Num 9, pp 1083-1095, issn 0020-1685Article

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