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Results 1 to 25 of 31106

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Photoconductivity of regular low dimensional arrays of GaAs wiresKSENEVICH, V. K; VALUSIS, G; ROSKOS, H. G et al.Materials science forum. 2002, pp 87-90, issn 0255-5476, isbn 0-87849-890-7Conference Paper

Low threshold InAlGaAs/AlGaAs strained quantum well lasers grown by molecular beam epitaxyCHYI, J.-I; GAU, J.-H; SHIEH, J.-L et al.Solid-state electronics. 1995, Vol 38, Num 5, pp 1105-1106, issn 0038-1101Article

Two step doping channel fet with symmetric normally on and normally off characteristicsWEN-SHIUNG LOUR.Solid-state electronics. 1995, Vol 38, Num 5, pp 961-963, issn 0038-1101Article

An experimental and theoretical analysis o the temperature profile in semiconductor laser diodes using the photodeflection technique : Applied optics and opto-electronicsBERTOLOTTI, M; LIAKHOU, G. L; LI VOLI, R et al.Measurement science & technology (Print). 1995, Vol 6, Num 9, pp 1278-1290, issn 0957-0233Article

Theoretical analysis of band structures and lasing characteristics in strained quantum wire lasersYAMAUCHI, T; TAKAHASHI, T; SCHULMAN, J. N et al.IEEE journal of quantum electronics. 1993, Vol 29, Num 6, pp 2109-2116, issn 0018-9197Article

Photoreflectance and contactless electroreflectance spectroscopy of GaAs-based structures : The below band gap oscillation featuresKUDRAWIEC, R; MOTYKA, M; GLADYSIEWICZ, M et al.Applied surface science. 2006, Vol 253, Num 1, pp 266-270, issn 0169-4332, 5 p.Conference Paper

Orientational dependence of hole effective masses in quantum-well laser structuresKUCHARCZYK, M; WARTAK, M. S.Superlattices and microstructures. 1998, Vol 24, Num 1, pp 17-24, issn 0749-6036Article

Optical gain of interdiffused InGaAs-GaAs and AlGaAs-GaAs quantum wellsCHAN, K. S; LI, E. H; CHAN, M. C. Y et al.IEEE journal of quantum electronics. 1998, Vol 34, Num 1, pp 157-165, issn 0018-9197Article

Contactless electoreflectance study of a GaAlAs/InGaAs/GaAs/GaAlAs step quantum well structureMONEGER, S; QIANG, H; POLLAK, F. H et al.Journal of electronic materials. 1995, Vol 24, Num 10, pp 1341-1344, issn 0361-5235Article

Sub-milliampere single-quantum-well InGaAs-GaAs-AlGaAs addressable laser arraysHANMIN ZHAO; YONG CHENG; MCDOUGAL, M. H et al.IEEE photonics technology letters. 1995, Vol 7, Num 6, pp 593-595, issn 1041-1135Article

Unique top-driven low-threshold lasers by impurity-induced disorderingWEI-XIONG ZOU; KWOK-KEUNG LAW; LIANG-CHEN WANG et al.IEEE journal of quantum electronics. 1993, Vol 29, Num 6, pp 2097-2102, issn 0018-9197Article

Investigations of the spectral characteristics of 980-nm InGaAs-GaAs-AlGaAs lasersAVRUTSKY, I. A; GORDON, R; CLAYTON, R et al.IEEE journal of quantum electronics. 1997, Vol 33, Num 10, pp 1801-1809, issn 0018-9197Article

Hole spin relaxation in intrinsic quantum wellsBAYLAC, B; MARIE, X; AMAND, T et al.Surface science. 1995, Vol 326, Num 1-2, pp 161-166, issn 0039-6028Article

Magneto-optical studies of compound semiconductorsJONES, E. D; KLEM, J. F; LYO, S. K et al.The Journal of physics and chemistry of solids. 1995, Vol 56, Num 11, pp 1525-1528, issn 0022-3697Conference Paper

Nano-tesla magnetic field magnetometry using an InGaAs-AlGaAs-GaAs 2DEG Hall sensorHANED, N; MISSOUS, M.Sensors and actuators. A, Physical. 2003, Vol 102, Num 3, pp 216-222, issn 0924-4247, 7 p.Article

Temperature dependent photoluminescence studies of molecular beam epitaxy grown silicon 8-doped pseudomorphic AlGaAs/InGaAs/GaAs quantum wellsSRINIVASAN, T; MURALIDHARAN, R; SINGH, S. N et al.SPIE proceedings series. 2002, pp 326-329, isbn 0-8194-4500-2, 2VolConference Paper

A novel pseudomorphic (GaAs1-xSbx-InyGa1-yAs)/GaAs bilayer-quantum-well structure lattice-matched to GaAs for long-wavelength optoelectronicsPETER, M; FORKER, J; WINKLER, K et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1551-1555, issn 0361-5235Conference Paper

Pyroelectric effect in semiconductor heterostructuresBAHDER, T. B; TOBER, R. L; BRUNO, J. D et al.Superlattices and microstructures. 1993, Vol 14, Num 2-3, pp 149-152, issn 0749-6036Article

Fabrication and characteristics of 0.12 μm AlGaAs/InGaAs/GaAs pseudomorphic HEMT using a silicon nitride assisted processLIM, Jong-Won; AHN, Ho-Kyun; JI, Hong-Gu et al.Semiconductor science and technology. 2004, Vol 19, Num 12, pp 1416-1421, issn 0268-1242, 6 p.Article

Ultrafast phase-locked spectroscopy of excitons in quantum nanostructuresKOMORI, K; HAYES, G. R; DEVEAUD, B et al.Physica status solidi. A. Applied research. 2002, Vol 190, Num 3, pp 855-859, issn 0031-8965Conference Paper

Alloy scattering in quantum wiresNAG, B. R; GANGOPADHYAY, S.Semiconductor science and technology. 1998, Vol 13, Num 4, pp 417-422, issn 0268-1242Article

Temperature effects on the radiative recombination in self-assembled quantum dotsFAFARD, S; RAYMOND, S; WANG, G et al.Surface science. 1996, Vol 361-62, Num 1-3, pp 778-782, issn 0039-6028Conference Paper

Voltage-tunable far-infrared photodetector with a very large tuning rangeHUANG, Y; LIEN, C.Applied surface science. 1996, Vol 92, Num 1-4, pp 537-542, issn 0169-4332Conference Paper

Strained-layer InGaAs-GaAs-AlGaAs lasers with monolithically integrated photodiodes by selective-area MOCVDLAMMERT, R. M; MENA, P. V; FORBES, D. V et al.IEEE photonics technology letters. 1995, Vol 7, Num 3, pp 247-250, issn 1041-1135Article

Application of the ODCR experiment to the identification of radiative recombination processesGODLEWSKI, M; CHEN, W. M; MONEMAR, B et al.Journal of luminescence. 1994, Vol 60-61, pp 52-55, issn 0022-2313Conference Paper

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