1.3-μm Quantum-well InGaAsP, AlGaInAs, and InGaAsN laser material gain: A theoretical studyYONG, J. C. L; RORISON, Judy M; WHITE, Ian H et al.IEEE journal of quantum electronics. 2002, Vol 38, Num 12, pp 1553-1564, issn 0018-9197, 12 p.Article

Polarisation-sensitive switch: An integrated intensity-independent solution for 1.3 μm based on the polarisation anisotropy of ordered InGaAsPKRÄMER, S; NEUMANN, S; PROST, W et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 6, pp 992-996, issn 0031-8965, 5 p.Conference Paper

High temperature characteristics of strained InGaAs/InGaAlAs quantum well lasersPARK, S.-H.Japanese journal of applied physics. 1997, Vol 36, Num 6A, pp 3528-3530, issn 0021-4922, 1Article

Etude optique de la structure électronique de superréseaux GaInAs/AlGaInAs soumis à un champ électrique = Optic studies of the electronic structures of the GaInAs/AlGaInAs superlattice under an electric fieldWang, Guiying; Tronc, P.1996, 144 p.Thesis

Sudden surface roughening followed by levelling observed in SIMS analysis of InP-containing III-V multilayersMIETHE, K; KUPHAL, E.Surface and interface analysis. 1993, Vol 20, Num 8, pp 742-744, issn 0142-2421Article

Selective and non-planar epitaxy of InP/GaInAs(P) by MOCVDTHRUSH, E. J; STAGG, J. P; GIBBON, M. A et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1993, Vol 21, Num 2-3, pp 130-146, issn 0921-5107Conference Paper

Stimulated-emission wavelength switching in optically pumped InGaAs/AIGaInAs laser heterostructuresANDRONOV, A. A; NOZDRIN, Yu. N; OKOMEL'KOV, A. V et al.Quantum electronics (Woodbury). 2009, Vol 39, Num 3, pp 247-250, issn 1063-7818, 4 p.Article

Self-assembled GaInAs quantum wire heterostructure design for temperature stabilized emission wavelengthWOHLERT, D. E; PICKRELL, G. W; CHANG, K. L et al.Journal of crystal growth. 2001, Vol 227-28, pp 985-989, issn 0022-0248Conference Paper

A physical model for mode-locking process of colliding pulse mode-locked multiquantum-well semiconductor laserWEIYOU CHEN; JINTIAN ZHU; SHIYONG LIU et al.IEEE journal of quantum electronics. 1995, Vol 31, Num 9, pp 1663-1667, issn 0018-9197Article

Determination of nonlinear gain coefficient of semiconductor lasers from above threshold spontaneous emission measurementGIRARDIN, F; DUAN, G.-H; CHABRAN, C et al.IEEE photonics technology letters. 1994, Vol 6, Num 8, pp 894-896, issn 1041-1135Article

Emission energy shift in GaInAs/GaInAsP strained quantum-box structures due to 0-dimensional quantum-box effectHIRAYAMA, H; MATSUNAGA, K; ASADA, M et al.Japanese journal of applied physics. 1994, Vol 33, Num 6A, pp 3571-3577, issn 0021-4922, 1Article

Contribution à l'étude optique de l'effet Wannier-Stark dans les superréseaux semiconducteurs = Contribution to the optical study of the Wannier-Stark effect in semiconductor superlatticesDepeyrot, Jérôme; Tronc, P.1994, 181 p.Thesis

Carrier transport effects and dynamics in multiple quantum well optical amplifiersWIESENFELD, J. M; WEISS, S; BOTKIN, D et al.Optical and quantum electronics. 1994, Vol 26, Num 7, pp S731-S756, issn 0306-8919Article

Separate-confinement heterostructure dependence of the effective carrier recombination coefficient of strained InGaAs/InGaAsP multiple quantum well lasersODAGAWA, T; NAKAJIMA, K; TANAKA, K et al.Applied physics letters. 1993, Vol 63, Num 22, pp 2996-2998, issn 0003-6951Article

Exciton saturation and field screening in InGaAs/InGaAsP multiple quantum wellsTÜTKEN, T; HAWDON, B. J; SCHEUBLE, E et al.Journal de physique. IV. 1993, Vol 3, Num 5, pp 257-260, issn 1155-4339Conference Paper

1.3-μm polarization-insensitive optical amplifier structure based on coupled quantum wellsYUMIN ZHANG; RUDEN, P. P.IEEE journal of quantum electronics. 1999, Vol 35, Num 10, pp 1509-1514, issn 0018-9197Article

1.95-μm-wavelength InGaAs/InGaAsP laser with compressively strained quantum well active layerDONG, J; UBUKATA, A; MATSUMOTO, K et al.Japanese journal of applied physics. 1997, Vol 36, Num 9A, pp 5468-5471, issn 0021-4922, 1Article

Size effects in Auger recombination for InGaAs quantum-wire structuresJIN WANG; LEBURTON, J.-P.IEEE photonics technology letters. 1994, Vol 6, Num 9, pp 1091-1093, issn 1041-1135Article

Analysis of the effects of doping and barrier design on the small-signal modulation characteristics of long-wavelength multiple quantum well lasersISHIKAWA, T; NAGARAJAN, R; BOWERS, J. E et al.Optical and quantum electronics. 1994, Vol 26, Num 7, pp S805-S816, issn 0306-8919Article

Gain and radiative current density in InGaAs/InGaAsP lasers with elctrostatically confined electron states : Strained-layer optoelectronic materials and devicesSILVER, M; O'REILLY, E. P.IEEE journal of quantum electronics. 1994, Vol 30, Num 2, pp 547-553, issn 0018-9197Article

Comparison of 1300 nm quantum well lasers using different material systemsLIN, G; LEE, C. P.Optical and quantum electronics. 2002, Vol 34, Num 12, pp 1191-1200, issn 0306-8919, 10 p.Conference Paper

Development of quantum well infrared photodetectors at the center for quantum devicesRAZEGHI, M; ERDTMANN, M; JELEN, C et al.Infrared physics & technology. 2001, Vol 42, Num 3-5, pp 135-148, issn 1350-4495Conference Paper

Contribution à l'optimisation de structures lasers à puits quantiques contraints sur InP, à base des systèmes GaInAsP/GaInAsP/InP et GaInAs/GaInAlAs/InP. Applications aux télécommunications optiques = Contribution to the improvement of strained quantum well lasers grown on InP, based with GaInAsP/GaInAsP/InP and GaInAs/GaInAlAs/InP systems. Application to optical communicationIssanchou, Olivier; Barrau, Jean.1996, 241 p.Thesis

Auger recombination in long-wavelength strained-layer quantum-well structuresJIN WANG; VON ALLMEN, P; LEBURTON, J.-P et al.IEEE journal of quantum electronics. 1995, Vol 31, Num 5, pp 864-875, issn 0018-9197Article

Chemical bevelling of InP-based structures by HBr-H₃PO₄-K₂Cr₂O₇ solutionSRNANEK, R; GOMATI, M. E; NOVOTNY, I et al.Journal of crystal growth. 1997, Vol 179, Num 1-2, pp 320-323, issn 0022-0248Article