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Results 1 to 25 of 1182

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The opportunities, successes and challenges for GaInNAsSbHARRIS, James S.Journal of crystal growth. 2005, Vol 278, Num 1-4, pp 3-17, issn 0022-0248, 15 p.Conference Paper

Photocurrent of 1 eV GaInNAs lattice-matched to GaAsGEISZ, J. F; FRIEDMAN, D. J; OLSON, J. M et al.Journal of crystal growth. 1998, Vol 195, Num 1-4, pp 401-408, issn 0022-0248Conference Paper

Mode locking a 1550 nm semiconductor disk laser by using a GaInNAs saturable absorberLINDBERG, Hans; SADEGHI, Mahdad; WESTLUND, Mathias et al.Optics letters. 2005, Vol 30, Num 20, pp 2793-2795, issn 0146-9592, 3 p.Article

Gain-cavity alignment profiling of 1.3 μm emitting GaInNAs vertical cavity surface emitting lasers (VCSELs) using high pressure techniquesKNOWLES, G; TOMIC, S; JIN, S et al.Physica status solidi. B. Basic research. 2003, Vol 235, Num 2, pp 480-485, issn 0370-1972, 6 p.Conference Paper

Advances in 1300-nm InGaAsN quantum well VCSELsKLEM, J. F; SERKLAND, D. K; GEIB, K. M et al.SPIE proceedings series. 2002, pp 137-144, isbn 0-8194-4385-9, 8 p.Conference Paper

Self-assembled InAs quantum dots in an InGaAsN matrix on GaAsEGOROV, A. Yu; BEDAREV, D; BERNKLAU, D et al.Physica status solidi. B. Basic research. 2001, Vol 224, Num 3, pp 839-843, issn 0370-1972Conference Paper

Mechanism analysis of improved GaInNAs optical properties through thermal annealingKITATANI, T; NAKAHARA, K; KONDOW, M et al.Journal of crystal growth. 2000, Vol 209, Num 2-3, pp 345-349, issn 0022-0248Conference Paper

Room-temperature pulsed operation of GaInNAs laser diodes with excellent high-temperature performanceKONDOW, M; NAKATSUKA, S; KITATANI, T et al.Japanese journal of applied physics. 1996, Vol 35, Num 11, pp 5711-5713, issn 0021-4922, 1Article

Theoretical study of GaInNAs-GaAs-based semiconductor optical amplifiersALEXANDROPOULOS, Dimitris; ADAMS, Mike J.IEEE journal of quantum electronics. 2003, Vol 39, Num 5, pp 647-655, issn 0018-9197, 9 p.Article

Photo-induced transient spectroscopy of defect levels in GaInNAsEROL, A; MAZZUCATO, S; ARIKAN, M. C et al.Semiconductor science and technology. 2003, Vol 18, Num 11, pp 968-972, issn 0268-1242, 5 p.Article

1.53μm GaInNAsSB laser diodes grown on GaAs(100)GUPTA, J. A; BARRIOS, P. J; ZHANG, X et al.Electronics Letters. 2005, Vol 41, Num 2, pp 71-72, issn 0013-5194, 2 p.Article

Effect of nitrogen concentration on electronic energy bands of Ga1-xInxNyAs1-y alloysKASSALI, K; BOUARISSA, N.Microelectronic engineering. 2000, Vol 54, Num 3-4, pp 277-286, issn 0167-9317Article

X-ray diffraction analysis of GaInNAs double-quantum-well structuresNAKASHIMA, Kiichi; TATENO, Kouta.Journal of applied crystallography. 2004, Vol 37, pp 14-23, issn 0021-8898, 10 p., 1Article

Photoreflectance spectroscopy of InGaAsN/GaAs quantum wells grown by MBSEK, G; RYCZKO, K; MISIEWICZ, J et al.Thin solid films. 2000, Vol 380, Num 1-2, pp 240-242, issn 0040-6090Conference Paper

GaInNAs-based vertical cavity semiconductor optical amplifiersALEXANDROPOULOS, Dimitris; ADAMS, Mike J.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 31, pp 3345-3354, issn 0953-8984, 10 p.Article

Influence of doping on gain characteristics of GaInNAs/GaAs quantum well lasersGÖNÜL, B; ODUNCUOGLU, M; DINDAROGLU, S et al.Semiconductor science and technology. 2003, Vol 18, Num 2, pp 163-169, issn 0268-1242, 7 p.Article

Photoluminescence study of strain-induced GaInNAs/GaAs quantum dotsKOSKENVAARA, H; HAKKARAINEN, T; LIPSANEN, H et al.Journal of materials science. Materials in electronics. 2003, Vol 14, Num 5-7, pp 357-360, issn 0957-4522, 4 p.Conference Paper

Recent progress on 1.55-μm dilute-nitride lasersBANK, Seth R; BAE, Hopil; GODDARD, Lynford L et al.IEEE journal of quantum electronics. 2007, Vol 43, Num 9-10, pp 773-785, issn 0018-9197, 13 p.Article

Long-wavelength GaInNAs(Sb) lasers on GaAsHA, Wonill; GAMBIN, Vincent; BANK, Seth et al.IEEE journal of quantum electronics. 2002, Vol 38, Num 9, pp 1260-1267, issn 0018-9197Article

Optical and electrical properties of modulation-doped n and p-type GaxIn1-xNyAs1-y/GaAs quantum wells for 1.3 μm laser applicationsSUN, Y; EROL, A; FONTAINE, C et al.Optical and quantum electronics. 2008, Vol 40, Num 7, pp 467-474, issn 0306-8919, 8 p.Article

Carrier Transport Study in GaInNAs Material Using Monte-Carlo MethodVOGIATZIS, Nikolaos; YING NING QIU; RORISON, Judy M et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 69971V.1-69971V.11, issn 0277-786X, isbn 978-0-8194-7195-6Conference Paper

Time and temperature dependence on rapid thermal annealing of molecular beam epitaxy grown Ga0.8In0.2N0.01As0.99 quantum wells analyzed using photoluminescenceGOVINDARAJU, Sridhar; REIFSNIDER, Jason M; OYE, Michael M et al.Journal of electronic materials. 2003, Vol 32, Num 1, pp 29-33, issn 0361-5235, 5 p.Article

Quantum-dot-like composition fluctuations in near-field magneto-photoliminescence [photoluminescence] spectra of InGaAsN alloysMINTAIROV, A. M; BLAGNOV, P. A; MERZ, J. L et al.SPIE proceedings series. 2003, pp 157-160, isbn 0-8194-4824-9, 4 p.Conference Paper

SIMS depth profiling of InGaAsN/InAlAs quantum wells on InPMAIER, M; SERRIES, D; GEPPERT, T et al.Applied surface science. 2003, Vol 203-04, pp 486-489, issn 0169-4332, 4 p.Conference Paper

GaInNAs quantum well structures for 1.55 μm emission on GaAs by atmospheric pressure metalorganic vapor phase epitaxyHAKKARAINEN, T; TOIVONEN, J; SOPANEN, M et al.Journal of crystal growth. 2002, Vol 234, Num 4, pp 631-636, issn 0022-0248Article

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