Comments on pseudo first principlë calculations of Auger sensitivity factorsFERRON, J; DE BERNARDEZ, L. S; BUITRAGO, R. H et al.Surface science. 1984, Vol 145, Num 2-3, pp L501-L503, issn 0039-6028Article

Dynamical screening effects on Auger CVV line shapes of solidsCINI, M; D'ANDREA, A.Physical review. B, Condensed matter. 1984, Vol 29, Num 12, pp 6540-6547, issn 0163-1829Article

Nonlinear extra-atomic relaxation: an analytic insightMATTHEW, J. A. D; SZYMANSKI, J. E.Journal of electron spectroscopy and related phenomena. 1984, Vol 33, Num 1, pp 73-77, issn 0368-2048Article

The natural procedure for the auto-deconvolution of CVV-type Auger peaksSZABO, P; RUSSELL, G. J.Journal of electron spectroscopy and related phenomena. 1984, Vol 33, Num 2, pp 115-121, issn 0368-2048Article

Multielectron spectroscopy : The xenon 4d hole double auger decayPENENT, F; PALAUDOUX, J; LABLANQUIE, P et al.Physical review letters. 2005, Vol 95, Num 8, issn 0031-9007, 083002-1-083002-4Article

Electronic structure of metallic alloys through Auger electron spectroscopyKLEIMAN, G. G.Journal of physics. Condensed matter (Print). 1993, Vol 5, Num 33A, pp A167-A168, issn 0953-8984, SUPConference Paper

INTERPRETATION OF THE ELECTRON CAPTURE BY MULTIPHONON EMISSION AT NATIVE LEVELS IN LPE GALLIUM ARSENIDEMORANTE JR; CARCELLER JE; BARBOLLA J et al.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 7; PP. L175-L179; BIBL. 13 REF.Article

ELECTRON-BEAM DELINEATION OF PB_1-XSN_XTE FILMS ON BAF₂BECK WA; BUCHNER SP; BYER NE et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 35; NO 2; PP. 163-165; BIBL. 7 REF.Article

THE INTERACTION OF SULPHUR DIOXIDE WITH THE ZN(0001) SURFACEGAINEY TC; HOPKINS BJ.1983; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1983; VOL. 16; NO 5; PP. 975-983; BIBL. 13 REF.Article

ELECTRON ESCAPE DEPTHS IN GERMANIUMGANT H; MOENCH W.1981; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1981; VOL. 105; NO 1; PP. 217-224; BIBL. 24 REF.Article

THE BACKSCATTERING FACTOR IN AUGER ELECTRON SPECTROSCOPYJABLONSKI A.1979; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1979; VOL. 87; NO 2; PP. 539-548; BIBL. 29 REF.Article

CALCUL DES DUREES DES PROCESSUS AUGER DANS LES SOLUTIONS SOLIDES INGAASP PGARBUZOV DZ; SOKOLOVA ZN; KHALFIN VB et al.1983; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1983; VOL. 53; NO 2; PP. 315-319; BIBL. 10 REF.Article

CONTRIBUTIONS TO SCREENING IN THE SOLID STATE BY ELECTRON SYSTEMS OF REMOTE ATOMS: EFFECTS TO PHOTOELECTRON AND AUGER TRANSITIONSWAGNER CD; TAYLOR JA.1982; JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA; ISSN 0368-2048; NLD; DA. 1982; VOL. 28; NO 3; PP. 211-217; BIBL. 28 REF.Article

THEORIE DE LA DEPENDANCE ANGULAIRE DE L'EMISSION ELECTRONIQUE DES SURFACES POLYCRISTALLINES SOUS BOMBARDEMENT ELECTRONIQUEBUI MINH DUC.1981; VIDE COUCHES MINCES; ISSN 0223-4335; FRA; DA. 1981; VOL. 36; NO 205; PP. 151-173; ABS. ENG; BIBL. 13 REF.Article

THE DETERMINATION OF SULFUR ION IMPLANTATION PROFILES IN GAAS USING AUGER ELECTRON SPECTROSCOPYPARK YS; GRANT JT; HAAS TW et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 2; PP. 809-812; BIBL. 8 REF.Article

ON AUGER ELECTRON SPECTROSCOPIC MEASUREMENTS OF ZNCL₂-COAL INTERACTIONPARKS GD.1978; J. ELECTRON SPECTROSC. RELAT. PHENOMENA; NLD; DA. 1978; VOL. 16; NO 1-2; PP. 119-121; BIBL. 2 REF.Article

ENHANCED DIFFUSION AND PRECIPITATION IN CU: IN ALLOYS DUE TO LOW ENERGY ION BOMBARDMENTRIVAUD L; WARD ID; ELTOUKHY AH et al.1981; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1981; VOL. 102; NO 2-3; PP. 610-617; BIBL. 20 REF.Article

SURFACE INVESTIGATION OF SI₂TE₃ WITH AUGER SPECTROSCOPY.ERLANDSSON R; BIRKHOLZ U; KARLSSON SE et al.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 41; NO 2; PP. K163-K165; BIBL. 4 REF.Article

ELECTRON AND ION BEAM EFFECTS IN AMORPHOUS SIO₂ AND SI₃N₄ FILMS FOR ELECTRONIC DEVICESHEZEL R.1982; RADIATION EFFECTS; ISSN 0033-7579; GBR; DA. 1982; VOL. 65; NO 1-4; PP. 101-106; BIBL. 13 REF.Article

INTERFACE COMPOSITION STUDIES OF THERMALLY OXIDIZED GAAS USING AUGER DEPTH PROFILINGXUN WANG; REYES MENA A; LICHTMAN D et al.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 4; PP. 851-854; BIBL. 13 REF.Article

AN AES EVALUATION OF CLEANING AND ETCHING METHODS FOR INSBAURET FD.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 12; PP. 2752-2755; BIBL. 17 REF.Article

AES STUDY OF BORON DIFFUSION IN SILICON FROM A BORON NITRIDE SOURCE WITH HYDROGEN INJECTIONPIGNATEL G; QUEIROLO G.1979; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1979; VOL. 126; NO 10; PP. 1805-1810; BIBL. 12 REF.Article

DEEP-HOLE INTERFERENCES IN PHOTON-INDUCED AUGER EMISSION FROM SOLIDSABRAHAM IBRAHIM S; CAROLI B; CAROLI C et al.1978; PHYS. REV., B; USA; DA. 1978; VOL. 18; NO 12; PP. 6702-6712; BIBL. 11 REF.Article

ANALYSE DE LA SILICE VITREUSE EN SPECTROMETRIE D'ELECTRONS AUGER: INFLUENCE DE L'ENERGIE PRIMAIRELEGER D; LACHARME JP; CHAMPION P et al.1978; C.R. ACAD. SCI., C; FRA; DA. 1978; VOL. 287; NO 6; PP. 223-226; ABS. ENG; BIBL. 10 REF.Article

Direct evidence of Doppler shift in 10 keV Ar⁺ ion induced Si Auger emissionXU, F; SICILIANO, R; CAMARCA, M et al.Surface science. 1989, Vol 209, Num 1-2, pp L133-L137, issn 0039-6028Article