TEMPERATURE DEPENDENCE OF THE FUNDAMENTAL EDGE OF GERMANIUM AND ZINC-BLENDE-TYPE SEMICONDUCTORS.CAMASSEL J; AUVERGNE D.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 12; NO 8; PP. 3258-3267; BIBL. 31 REF.Article

METHODE DE MESURE PRECISE DE LA VALEUR DU POINT DE CROISEMENT ENTRE GAP DIRECT ET GAP INDIRECT DES ALLIAGES DE COMPOSES III-V.MERLE P; AUVERGNE D; MATHIEU H et al.1976; VIDE; FR.; DA. 1976; NO 183 SUPPL.; PP. 125-128; ABS. ANGL.; BIBL. 7 REF.; (MATER. TECHNOL. MICROELECTR. TENDANCES ACTUELLES. COLLOQ. C.R.; MONTPELLIER; 1976)Conference Paper

PHONON-ASSISTED TRANSITIONS IN GALLIUM-PHOSPHIDE MODULATION SPECTRA.AUVERGNE D; MERLE P; MATHIEU H et al.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 12; NO 4; PP. 1371-1376; BIBL. 26 REF.Article

TEMPERATURE DEPENDENCE OF THE BAND GAP AND COMPARISON WITH THE THRESHOLD FREQUENCY OF PURE GAAS LASERS.CAMASSEL J; AUVERGNE D; MATHIEU H et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 6; PP. 2683-2689; BIBL. 36 REF.Article

A NEW DIVINDING METHOD FOR MODULATION SPECTROSCOPY AND RELATED PROBLEMS IN THE NEAR INFRAREDMERLE P; AUVERGNE D; MATHIEU H et al.sdMEAS. AND CONTROL MECO' 77. INT. ASSOC. SCI. TECHNOL. DEV. SYMP./1977/ZUERICH; USA; ANAHEIM: ACTA PRESS; DA. S.D.; PP. 8-9; BIBL. 5 REF.Conference Paper

BAND-GAP SHRINKAGE OF SEMICONDUCTORS.AUVERGNE D; CAMASSEL J; MATHIEU H et al.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 11; NO 6; PP. 2251-2259; BIBL. 22 REF.Article

BAND STRUCTURE ENHANCEMENT OF INDIRECT TRANSITIONS.AUVERGNE D; MERLE P; MATHIEU H et al.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 21; NO 5; PP. 437-439; ABS. FR.; BIBL. 9 REF.Article

MODULATED SPECTROSCOPY OF ZINCBLENDE SEMICONDUCTORS. CALCULATION OF PIEZOMODULATION PARAMETERS FOR INDIRECT SEMICONDUCTORS.MATHIEU H; AUVERGNE D; MERLE P et al.1975; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1975; VOL. 72; NO 2; PP. 609-616; ABS. FR.; BIBL. 20 REF.Article

Contribution à l'étude et l'optimisation de structures de conversion spécifiques à la technologie CMOSMasmoudi, Mohamed; Auvergne, D.1989, 173 p.Thesis

Caractérisation dynamique des technologies CMOS = Dynamic characterization of CMOS technologiesColl, Philippe; Auvergne, D.1994, 188 p.Thesis

Modèle de caractérisation d'une bibliothèque CMOS: définition d'une sélection optimale d'éléments = CMOS library characterization model: definition of an optimal selection of templatesKohi Mellah, Meryem; Auvergne, D.1995, 220 p.Thesis

CONDUCTION BAND STRUCTURE OF GAINP.MERLE P; AUVERGNE D; MATHIEU H et al.1977; PHYS. REV., B; U.S.A.; DA. 1977; VOL. 15; NO 4; PP. 2032-2047; BIBL. 40 REF.Article

ELECTRONIC ENERGY LEVELS IN GA₁-X AL_X-SB ALLOYS.MATHIEU H; AUVERGNE D; MERLE P et al.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 12; NO 12; PP. 5846-5852; BIBL. 29 REF.Article

Modélisation et optimisation des performances des structures digitales en arséniure de gallium = Performance modeling and optimization of gallium arsenide digital structuresOusset, Michel; Auvergne, D.1994, 196 p.Thesis

Contribution au développement du compilateur structurel PRINT : algorithmes d'évaluation des performances temporelles des structures CMOSRobert, Michel; Auvergne, D.1987, 160 p.Thesis

A novel macromodel for power estimation in CMOS structuresTURGIS, S; AUVERGNE, D.IEEE transactions on computer-aided design of integrated circuits and systems. 1998, Vol 17, Num 11, pp 1090-1098, issn 0278-0070Article

SPIN-ORBIT SPLITTING IN ALSB.RUSTAGI KC; MERLE P; AUVERGNE D et al.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 18; NO 9-10; PP. 1201-1203; BIBL. 10 REF.Article

Process characterization with dynamic test structuresCOLL, P; ROBERT, M; REGNIER, X et al.Electronics Letters. 1993, Vol 29, Num 20, pp 1764-1766, issn 0013-5194Article

Synchronous-mode evaluation of delays in CMOS structuresDESCHACHT, D; ROBERT, M; AUVERGNE, D et al.IEEE journal of solid-state circuits. 1991, Vol 26, Num 5, pp 789-795, issn 0018-9200Article

Explicit formulation of delays in CMOS data pathsDESCHACHT, D; ROBERT, M; AUVERGNE, D et al.IEEE journal of solid-state circuits. 1988, Vol 23, Num 5, pp 1257-1264, issn 0018-9200Article

FSPICE: a tool for fault modelling in MOS circuitsRENOVELL, M; CAMBON, G; AUVERGNE, D et al.Integration (Amsterdam). 1985, Vol 3, Num 3, pp 245-255, issn 0167-9260Article

Association CMOS transistors with BDD arcs for technology mappingREIS, A; ROBERT, M; AUVERGNE, D et al.Electronics Letters. 1995, Vol 31, Num 14, pp 1118-1120, issn 0013-5194Article

Explicit formulation of delays in CMOS VLSIAUVERGNE, D; DESCHACHT, D; ROBERT, M et al.Electronics Letters. 1987, Vol 23, Num 14, pp 741-742, issn 0013-5194Article

HETERO-EPITAXY OF ZNSE ON GAAS BY HYDROGEN TRANSPORTCHEVRIER J; ETIENNE D; CAMASSEL J et al.1972; MATER. RES. BULL.; U.S.A.; DA. 1972; VOL. 7; NO 12; PP. 1485-1492; BIBL. 18 REF.Serial Issue

COMPOSITION DEPENDENCE OF FUNDAMENTAL EDGE IN GA_1-XAL_XSB ALLOYS.AUVERGNE D; MERLE P; ZEIN ELDIN A et al.1975; SOLID STATE COMMUNIC.; G.B.; DA. 1975; VOL. 17; NO 4; PP. 511-514; BIBL. 23 REF.Article