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Laser initiated electron avalanches observed in a laser microprobe mass spectrometerHUTT, K. W; WALLACH, E. R.Journal of applied physics. 1989, Vol 66, Num 5, pp 2223-2225, issn 0021-8979Article

Effect of avalanche-induced light emission on the multiplication factor in bipolar junction transistorsSHENG-LYANG JANG.Solid-state electronics. 1991, Vol 34, Num 11, pp 1191-1196, issn 0038-1101Article

A physical phenomenon to implement a random (noninstantaneous) multiplication photodetectorJINDAL, R. P.IEEE electron device letters. 1989, Vol 10, Num 2, pp 49-51, issn 0741-3106Article

A non-Markovian model of avalanche gain statistics for a solid-state photomultiplierLAVIOLETTE, R. A; STAPELBROEK, M. G.Journal of applied physics. 1989, Vol 65, Num 2, pp 830-836, issn 0021-8979Article

Water vapor-enhanced electron-avalanche growth in SF₆ for nonuniform fieldsVAN BRUNT, R. J.Journal of applied physics. 1986, Vol 59, Num 7, pp 2314-2323, issn 0021-8979Article

Ultrahigh-sensitivity camera with new super-harp tubeKUBOTA, M; KATO, T; SUZUKI, S et al.NHK Laboratories Note. 1997, Num 449, pp 1-11, issn 0027-657XArticle

An energy model for artificially generated bubbles in liquidsAITKEN, F; MCCLUSKEY, F. M. J; DENAT, A et al.Journal of Fluid Mechanics. 1996, Vol 327, pp 373-392, issn 0022-1120Article

Experimental and numerical analysis of GTO's snuberless turn-off operationsKHATIR, Z; LARGUIER, P; SEBILLE, D et al.Microelectronics journal. 1996, Vol 27, Num 2-3, pp 231-241, issn 0959-8324Article

Développement d'une avalanche électronique dans des champs électriques intensesSHVEJGERT, V. A.Fizika plazmy (Moskva, 1975). 1988, Vol 14, Num 5, pp 633-636, issn 0134-5052Article

Avalanche spectroscopy of MIS structure generation centresKRAVCHENKO, A. B; PLOTNIKOV, A. F; SOLONKO, A. G et al.Physica status solidi. A. Applied research. 1986, Vol 93, Num 1, pp 369-376, issn 0031-8965Article

Approaching fundamental limits on signal detectionJINDAL, R. P.I.E.E.E. transactions on electron devices. 1994, Vol 41, Num 11, pp 2133-2138, issn 0018-9383Article

A photoelectronic source for electron avalanche measurementsMAHAJAN, S. M; SUDARSHAN, T. S.Review of scientific instruments. 1991, Vol 62, Num 10, pp 2495-2496, issn 0034-6748Article

Temperature and impact ionization effects on f_T of advanced bipolar transistorsYUAN, J. S; YEH, C. S; GADEPALLY, B et al.Journal of applied physics. 1991, Vol 70, Num 4, pp 2402-2407, issn 0021-8979Article

Le problème du mécanisme de claquage d'une diode Zener à isolation magnétiqueVINTIZENKO, I. I; SULAKSHIN, A. S; TSVETKOV, V. I et al.Žurnal tehničeskoj fiziki. 1988, Vol 58, Num 8, pp 1584-1586, issn 0044-4642Article

Internal and external laser-induced avalanche breakdown of single droplets in an argon atmosphereHSIEH, W. F; EICKMANS, J. H; CHANG, R. K et al.Journal of the Optical Society of America. B, Optical physics (Print). 1987, Vol 4, Num 11, pp 1816-1820, issn 0740-3224Article

High-pressure pulsed avalanche discharges : Formulas for required preionization density and rate for homogeneityBRENNING, N; AXNÄS, I; NILSSON, J. O et al.IEEE transactions on plasma science. 1997, Vol 25, Num 1, pp 83-88, issn 0093-3813Article

Arrayed silicon avalanche cathodesEA, J. Y; LALEVIC, B; DAZHONG ZHU et al.IEEE electron device letters. 1990, Vol 11, Num 9, pp 403-405, issn 0741-3106, 3 p.Article

Diffusion spatiale des électrons et critères du claquage optique dans les gazKONOVALOV, V. P.Fizika plazmy (Moskva, 1975). 1987, Vol 13, Num 11, pp 1364-1369, issn 0134-5052Article

Propriétés électrophysiques et optophysiques de l'air ionisé par une impulsion courte d'électrons rapidesVAGIN, YU. P; STAL, N. L; KHOKHLOV, V. D et al.Izvestiâ vysših učebnyh zavedenij. Radiofizika. 1987, Vol 30, Num 6, pp 720-728, issn 0021-3462Article

Electroluminescence and avalanche multiplication at electric field strength exceeding 1 MV/cm in hydrogenated amorphous SiC alloyTOYAMA, T; MATSUI, T; HIRATSUKA, K et al.Japanese journal of applied physics. 1996, Vol 35, Num 12A, pp 5975-5979, issn 0021-4922, 1Article

Emission photoélectrique de surfaces métalliques amplifiée par avalanches électroniques dans l'air ambiant. Etude de la stabilité de l'amplification = Photoelectric emission from metallic surfaces amplified by electronic avalanches in ambient air. Study of the stability of the amplificationMoussou, PiPierre-Philippe; Goldman.1992, 135 p.Thesis

Low-temperature avalanche multiplication in the collector-base junction of advanced n-p-n transistorsPONG-FEI LU.I.E.E.E. transactions on electron devices. 1990, Vol 37, Num 3, pp 762-767, issn 0018-9383, 1Article

A new silicon avalanche photodiode photon counting detector module for astronomyNIGHTINGALE, N. S.Experimental astronomy. 1990, Vol 1, Num 6, pp 407-422, issn 0922-6435, 16 p.Article