Depth profiles of implanted low energy ions in metals = Profils de profondeur d'ions implantés de basse énergie dans les métauxZOMORRODIAN, A; TOUGAARD, S; IGNATIEV, A et al.Physica scripta. Topical issues. 1983, Vol 6, pp 76-78Article

ON THE FIRST NEGATIVE SYSTEM OF N₂⁺KLYNNING L; PAGES P.1972; PHYS. SCRIPTA; SUEDE; DA. 1972; VOL. 6; NO 4; PP. 195-199; BIBL. 9 REF.Serial Issue

A TEM investigation of the structure of nitrogen-implanted Ti―6A1―4V = Etude par microscopie électronique en transmission de la structure de Ti-6Al-4V implanté par de l'azoteHUTCHINGS, R.Materials letters (General ed.). 1983, Vol 1, Num 5-6, pp 137-140, issn 0167-577XArticle

ETUDE DE L'OXYGENE ET DE L'AZOTE MOLECULAIRES DANS DES EXPERIENCES DE DEPOLARISATION MAGNETIQUEDUFAYARD J; LOMBARDI M; NEDELEC O et al.1973; C.R. ACAD. SCI., B; FR.; DA. 1973; VOL. 276; NO 12; PP. 471-474; BIBL. 12 REF.Serial Issue

On the difference in damage distributions of N⁺ single ion and N₂⁺ molecular ion irradiation of silicon at high dosesMÜLLER, M; FINK, D.Radiation effects and defects in solids. 1995, Vol 133, Num 4, pp 259-266, issn 1042-0150Article

Surface modification of Ti-4Al-2V alloy by nitrogen implantationWANG, Z. G; ZU, X. T; XIANG, X et al.Journal of materials science. 2006, Vol 41, Num 11, pp 3363-3367, issn 0022-2461, 5 p.Article

Investigating the haloes of planetary nebulae. IV: NGC 6720, the Ring NebulaBRYCE, M; BALICK, B; MEABURN, J et al.Monthly Notices of the Royal Astronomical Society. 1994, Vol 266, Num 3, pp 721-732, issn 0035-8711Article

Simultaneous emission of sever laser bands in the N₂ 2⁺ system by current confinement and discharge channel plasma inductance reductionCASTRO, M. P. P; FELLOWS, C. E; MASSONE, C. A et al.Optics communications. 1993, Vol 102, Num 1-2, pp 53-58, issn 0030-4018Article

Surface-restructuring behavior of aged PTFE irradiated by a high-flux nitrogen ion beamJIZHONG ZHANG; XIAOJI ZHANG; HONGYU ZHOU et al.Surface & coatings technology. 2004, Vol 187, Num 2-3, pp 250-256, issn 0257-8972, 7 p.Article

Monitoring of ion mass composition in plasma immersion ion implantationKIM, G. H; RIM, G. H; NIKIFOROV, S. A et al.Surface & coatings technology. 2001, Vol 136, Num 1-3, pp 255-260, issn 0257-8972Conference Paper

Plasma source ion implantation into a three-dimensional substrateBABA, K; HATADA, R.Hyomen gijutsu. 1998, Vol 49, Num 2, pp 176-179, issn 0915-1869Article

C⁺ pickup ions in the heliosphere and their originGEISS, J; GLOECKLER, G; FISK, L. A et al.Journal of geophysical research. 1995, Vol 100, Num A12, pp 23373-23377, issn 0148-0227Article

The use of ion implantation for micromachining GaAs for sensor applicationsMIAO, J; HARTNAGEL, H. L; RÜCK, D et al.Sensors and actuators. A, Physical. 1995, Vol 46, Num 1-3, pp 30-34, issn 0924-4247Conference Paper

Detection of the [N II] 122 and 205 micron lines : densities in G333.6-0.2COLGAN, S. W. J; HAAS, M. R; ERICKSON, E. F et al.The Astrophysical journal. 1993, Vol 413, Num 1, pp 237-241, issn 0004-637X, 1Article

Kinetics and mechanism of reactive sputtering of aluminium by ions N₂⁺ and Ar⁺ = Cinétique et mécanisme de pulvérisation réactive de l'aluminium par des ions N₂⁺ et Ar⁺HANTZPERGUE, J. J; PAULEAU, Y; BOUTEVILLE, A et al.Le Vide, les couches minces. 1985, Vol 40, Num 225, pp 13-32, issn 0223-4335Article

Reflection of molecular nitrogen ions from polycrystal targets = Réflexion d'ions d'azote moléculaire de cibles polycristallinesBALASHOVA, L. L; GARIN, S. N; MOLCHANOV, V. A et al.Radiation effects. 1985, Vol 84, Num 3-4, pp 257-261, issn 0033-7579Article

Range distribution of low-energy nitrogen ions in metals = Distribution des domaines des ions d'azote de faible énergie dans les métauxZOMORRODIAN, A; TOUGAARD, S; IGNATIEV, A et al.Physical review. B, Condensed matter. 1984, Vol 30, Num 6, pp 3124-3130, issn 0163-1829Article

Implantation-assisted synthesis of gallium oxide nanoribbons on gallium arsenide using carbon and nitrogenLO, K. C; HO, H. P; FU, K. Y et al.Surface & coatings technology. 2007, Vol 201, Num 15, pp 6804-6807, issn 0257-8972, 4 p.Conference Paper

Applications of ion implantation in metals = Application de l'implantation d'ions dans les métauxDEARNALEY, G.Thin solid films. 1983, Vol 107, Num 3, pp 315-326, issn 0040-6090Article

Stopping power for N⁺ ions with energies from 160 to 440 keV in aluminium = Pouvoir de freinage des ions N⁺ à énergie entre 160 et 440 keV dans l'aluminium = Abbremsvermoegen fuer N⁺-Ionen mit Energien zwischen 160 und 440 keV in AluminiumYALYSHKO, S.V; WEDELL, R.Physica status solidi. B. Basic research. 1983, Vol 116, Num 1, pp K47-K50, issn 0370-1972Article

Tribological characteristics of nitrogen (N⁺) implanted iron = Caractères tribologiques du fer implanté d'ions azote (N⁺)JONES, W. R. JR; FERRANTE, J.ASLE transactions. 1983, Vol 26, Num 3, pp 351-359, issn 0569-8197Article

A study of neon-nitrogen interactions in d.c. glow discharges by optical emission spectroscopyAVELAR-BATISTA, J. C; WILSON, A. D; DAVISON, A et al.Thin solid films. 2001, Vol 398-99, Num 1, pp 507-512, issn 0040-6090Conference Paper

SPECTRES D'EMISSION ET ABONDANCES DES IONS D'AZOTE ET DE CARBONE DANS LES NEBULEUSES PLANETAIRESNIKITIN AA; SAPAR AA; FEKLISTOVA T KH et al.1981; ASTR. ZH.; SUN; DA. 1981; VOL. 58; NO 1; PP. 101-105; ABS. ENG; BIBL. 18 REF.Article

TERMS OF N VI AND O VIIBAKER SC.1973; J. PHYS. B; G.B.; DA. 1973; VOL. 6; NO 4; PP. 709-714; BIBL. 12 REF.Serial Issue

EVALUATION DES PERTES D'ENERGIE D'IONS LOURDS DANS LE SILICIUM GRACE AU PHENOMENE DE CANALISATION.GROB JJ; GROB A; SIFFERT P et al.1974; VIDE; FR.; DA. 1974; NO 173; PP. 374-379; BIBL. 12 REF.Article