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Influence de l'implantation ionique d'azote sur la résistance à l'usure de composants industriels = Effect of nitrogen implantation on wear strength of industrial componentsFAYEULLE, S; TREHEUX, D; GUIRALDENQ, P et al.Le Vide, les couches minces. 1983, issn 0223-4335, 139, suppl. 217Article

Depth profiles of implanted low energy ions in metals = Profils de profondeur d'ions implantés de basse énergie dans les métauxZOMORRODIAN, A; TOUGAARD, S; IGNATIEV, A et al.Physica scripta. Topical issues. 1983, Vol 6, pp 76-78Article

Distribution of nitrogen implanted in iron as a function of fluence = Distribution de l'azote implanté dans le fer en fonction de la fluenceBARNAVON, T; TOUSSET, J; FAYEULLE, S et al.Radiation effects. 1983, Vol 77, Num 3-4, pp 249-268, issn 0033-7579Article

Formation of AlN by nitrogen ion implantation = Formation de AlN par implantation d'ions azoteRAUSCHENBACH, B; KOLITSH, A; RICHTER, E et al.Thin solid films. 1983, Vol 109, Num 1, pp 37-45, issn 0040-6090Article

Influence de l'implantation d'ions azote sur la température critique des couches supraconductrices d'aluminiumVOLKOV, M. P; TAMULEVICHYUS, S. I; PRANYAVICHYUS, L. I et al.Fizika tverdogo tela. 1983, Vol 25, Num 8, pp 2492-2494, issn 0367-3294Article

ON THE FIRST NEGATIVE SYSTEM OF N2+KLYNNING L; PAGES P.1972; PHYS. SCRIPTA; SUEDE; DA. 1972; VOL. 6; NO 4; PP. 195-199; BIBL. 9 REF.Serial Issue

A TEM investigation of the structure of nitrogen-implanted Ti―6A1―4V = Etude par microscopie électronique en transmission de la structure de Ti-6Al-4V implanté par de l'azoteHUTCHINGS, R.Materials letters (General ed.). 1983, Vol 1, Num 5-6, pp 137-140, issn 0167-577XArticle

ETUDE DE L'OXYGENE ET DE L'AZOTE MOLECULAIRES DANS DES EXPERIENCES DE DEPOLARISATION MAGNETIQUEDUFAYARD J; LOMBARDI M; NEDELEC O et al.1973; C.R. ACAD. SCI., B; FR.; DA. 1973; VOL. 276; NO 12; PP. 471-474; BIBL. 12 REF.Serial Issue

On the difference in damage distributions of N+ single ion and N2+ molecular ion irradiation of silicon at high dosesMÜLLER, M; FINK, D.Radiation effects and defects in solids. 1995, Vol 133, Num 4, pp 259-266, issn 1042-0150Article

EXTENSION OF THE MEINEL SYSTEM OF N2+ TO HIGH VIBRATIONAL LEVELS OF THE A2PI U STATEVAN DE RUNSTRAAT CA; GOVERS TR; HOLLAND RF et al.1973; CHEM. PHYS. LETTERS; NETHERL.; DA. 1973; VOL. 18; NO 4; PP. 549-552; BIBL. 23 REF.Serial Issue

Surface modification of Ti-4Al-2V alloy by nitrogen implantationWANG, Z. G; ZU, X. T; XIANG, X et al.Journal of materials science. 2006, Vol 41, Num 11, pp 3363-3367, issn 0022-2461, 5 p.Article

Investigating the haloes of planetary nebulae. IV: NGC 6720, the Ring NebulaBRYCE, M; BALICK, B; MEABURN, J et al.Monthly Notices of the Royal Astronomical Society. 1994, Vol 266, Num 3, pp 721-732, issn 0035-8711Article

Simultaneous emission of sever laser bands in the N2 2+ system by current confinement and discharge channel plasma inductance reductionCASTRO, M. P. P; FELLOWS, C. E; MASSONE, C. A et al.Optics communications. 1993, Vol 102, Num 1-2, pp 53-58, issn 0030-4018Article

Nitrogen-implanted silicon for micromachiningGUEORGUIEV, V; POPOVA, L; ANDREEV, S et al.International journal of electronics. 1995, Vol 78, Num 2, pp 279-283, issn 0020-7217Conference Paper

The importance of the ATR effect for radiative stabilization in double-electron captureVAN DER HART, H. W; HANSEN, J. E.Journal of physics. B. Atomic, molecular and optical physics (Print). 1994, Vol 27, Num 14, pp L395-L400, issn 0953-4075Article

Neutralization of very-low-energy ions on Pt(100) = Neutralisation d'ions de très faible énergie sur Pt(100)AKAZAWA, H; MURATA, Y.Physical review letters. 1988, Vol 61, Num 10, pp 1218-1221, issn 0031-9007Article

The effects of ion-implanted nitrogen on the fatigue behavior of plain carbon steel = Effets de l'azote implanté sous forme d'ions sur la résistance à la fatigue d'un acier non alliéGRUBE, W. L; ROUZE, S. R.Microstructural science. 1983, Vol 11, pp 51-61, issn 0361-1213Article

X-ray study of silicon crystal structure changes due to implantation with fast nitrogen ionsZYMIERSKA, D; AULEYTNER, J; GODWOD, K et al.Journal of alloys and compounds. 2001, Vol 328, Num 1-2, pp 237-241, issn 0925-8388Conference Paper

Nitrogen ion spectrum from a low energy Plasma Focus deviceKELLY, H; LEPONE, A; MARQUEZ, A et al.IEEE transactions on plasma science. 1997, Vol 25, Num 3, pp 455-459, issn 0093-3813Article

Surface-restructuring behavior of aged PTFE irradiated by a high-flux nitrogen ion beamJIZHONG ZHANG; XIAOJI ZHANG; HONGYU ZHOU et al.Surface & coatings technology. 2004, Vol 187, Num 2-3, pp 250-256, issn 0257-8972, 7 p.Article

Monitoring of ion mass composition in plasma immersion ion implantationKIM, G. H; RIM, G. H; NIKIFOROV, S. A et al.Surface & coatings technology. 2001, Vol 136, Num 1-3, pp 255-260, issn 0257-8972Conference Paper

Plasma source ion implantation into a three-dimensional substrateBABA, K; HATADA, R.Hyomen gijutsu. 1998, Vol 49, Num 2, pp 176-179, issn 0915-1869Article

C+ pickup ions in the heliosphere and their originGEISS, J; GLOECKLER, G; FISK, L. A et al.Journal of geophysical research. 1995, Vol 100, Num A12, pp 23373-23377, issn 0148-0227Article

The use of ion implantation for micromachining GaAs for sensor applicationsMIAO, J; HARTNAGEL, H. L; RÜCK, D et al.Sensors and actuators. A, Physical. 1995, Vol 46, Num 1-3, pp 30-34, issn 0924-4247Conference Paper

Detection of the [N II] 122 and 205 micron lines : densities in G333.6-0.2COLGAN, S. W. J; HAAS, M. R; ERICKSON, E. F et al.The Astrophysical journal. 1993, Vol 413, Num 1, pp 237-241, issn 0004-637X, 1Article

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