Examination of growth rate during hydride vapor phase epitaxy of GaN on ammonothermal GaN seedsSOCHACKI, T; AMILUSIK, M; FIJALKOWSKI, M et al.Journal of crystal growth. 2014, Vol 407, pp 52-57, issn 0022-0248, 6 p.Article

Control of initial bow of sapphire substrates for III-nitride epitaxy by internally focused laser processingAIDA, Hideo; AOTA, Natsuko; TAKEDA, Hidetoshi et al.Journal of crystal growth. 2012, Vol 361, pp 135-141, issn 0022-0248, 7 p.Article

Development of a novel in situ monitoring technology for ammonothermal reactorsALT, Nicolas S. A; MEISSNER, Elke; SCHLUECKER, Eberhard et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 2-4, issn 0022-0248, 3 p.Conference Paper

Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaNFEIGELSON, B. N; ANDERSON, T. J; ABRAHAM, M et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 21-26, issn 0022-0248, 6 p.Conference Paper

A review of III-nitride research at the Center for Quantum DevicesRAZEGHI, M; MCCLINTOCK, R.Journal of crystal growth. 2009, Vol 311, Num 10, pp 3067-3074, issn 0022-0248, 8 p.Conference Paper

Free-standing zinc-blende (cubic) GaN layers and substratesNOVIKOV, S. V; STANTON, N. M; CAMPION, R. P et al.Journal of crystal growth. 2008, Vol 310, Num 17, pp 3964-3967, issn 0022-0248, 4 p.Conference Paper

Temperature influence on the growth of gallium nitride by HVPE in a mixed H₂/N₂ carrier gasTRASSOUDAINE, Agnès; CADORET, Robert; GIL-LAFON, Evelyne et al.Journal of crystal growth. 2004, Vol 260, Num 1-2, pp 7-12, issn 0022-0248, 6 p.Article

High-temperature acidic ammonothermal method for GaN crystal growthYOSHIDA, Kazuo; AOKI, Kensuke; FUKUDA, Tsuguo et al.Journal of crystal growth. 2014, Vol 393, pp 93-97, issn 0022-0248, 5 p.Conference Paper

Numerical time-dependent 3D simulation of flow pattern and heat distribution in an ammonothermal system with various baffle shapesERLEKAMPF, J; SEEBECK, J; SAWA, P et al.Journal of crystal growth. 2014, Vol 403, pp 96-104, issn 0022-0248, 9 p.Conference Paper

Damage of light-emitting diodes induced by high reverse-bias stressCHEN, N. C; WANG, Y. N; WANG, Y. S et al.Journal of crystal growth. 2009, Vol 311, Num 3, pp 994-997, issn 0022-0248, 4 p.Conference Paper

Effect of substitution of nitrogen ions to red-emitting Sr₃B₂O_6-3/2xN_x:Eu²⁺ oxy-nitride phosphor for the application to white LEDSANG HOON JUNG; DONG SEOK KANG; DUK YOUNG JEON et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 116-119, issn 0022-0248, 4 p.Conference Paper

Nitride precipitation in compositionally heterogeneous alloys: Nucleation, growth and coarsening during nitridingVAN LANDEGHEM, H. P; GOUNE, M; REDJAÏMIA, A et al.Journal of crystal growth. 2012, Vol 341, Num 1, pp 53-60, issn 0022-0248, 8 p.Article

Stable structure and effects of oxygen on InN (1 0 1 0) and (1 1 2 0) surfacesJIANLI WANG; DONGMEI BAI; GANG TANG et al.Journal of crystal growth. 2011, Vol 327, Num 1, pp 233-236, issn 0022-0248, 4 p.Article

Influences of periodic Si delta-doping on the characteristics of n-GaN grown on Si (111) substratePENG XIANG; YIBIN YANG; JIALI LIN et al.Journal of crystal growth. 2014, Vol 387, pp 106-110, issn 0022-0248, 5 p.Article

Molecular beam epitaxy of InN nanorods on Si- and C-faces of SiC substratesGOFF, L. E; POWELL, R. E. L; KENT, A. J et al.Journal of crystal growth. 2014, Vol 386, pp 135-138, issn 0022-0248, 4 p.Article

Control of crystallinity of GaN grown on sapphire substrate by metalorganic vapor phase epitaxy using in situ X-ray diffraction monitoring methodIWAYA, Motoaki; YAMAMOTO, Taiji; TANAKA, Daiki et al.Journal of crystal growth. 2014, Vol 401, pp 367-371, issn 0022-0248, 5 p.Conference Paper

Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxyKUN ZHOU; JIANPING LIU; SHUMING ZHANG et al.Journal of crystal growth. 2013, Vol 371, pp 7-10, issn 0022-0248, 4 p.Article

Ab-initio studies of the adsorption of a B ad-atom on GaN surfacesPALOMINO-ROJAS, L; GARCIA-DIAZ, Reyes; COCOLETZI, GregorioH et al.Journal of crystal growth. 2012, Vol 338, Num 1, pp 62-68, issn 0022-0248, 7 p.Article

Influence of source gas supply sequence on hydride vapor phase epitaxy of AlN on (0001 ) sapphire substratesTOGASHI, Rie; NAGASHIMA, Toru; HARADA, Manabu et al.Journal of crystal growth. 2012, Vol 360, pp 197-200, issn 0022-0248, 4 p.Conference Paper

Hydrogen etching on the surface of GaN for producing patterned structuresYEH, Yen-Hsien; CHEN, Kuei-Ming; WU, Yin-Hao et al.Journal of crystal growth. 2011, Vol 314, Num 1, pp 9-12, issn 0022-0248, 4 p.Article

Reduction of the dislocation density in HVPE-grown GaN epi-layers by an in situ SiN_x treatmentASHRAF, H; SRIDHARA RAO, D. V; GOGOVA, D et al.Journal of crystal growth. 2010, Vol 312, Num 4, pp 595-600, issn 0022-0248, 6 p.Article

Crystallization of supercooled silicon droplets initiated through small silicon nitride particlesALPHEI, L; BRAUN, A; BECKER, V et al.Journal of crystal growth. 2009, Vol 311, Num 5, pp 1250-1255, issn 0022-0248, 6 p.Article

Epitaxial growth of ferromagnetic δ-phase manganese gallium on semiconducting scandium nitride (001)KANGKANG WANG; CHINCHORE, Abhijit; WENZHI LIN et al.Journal of crystal growth. 2009, Vol 311, Num 8, pp 2265-2268, issn 0022-0248, 4 p.Article

Bandedge absorption of GaAsN films measured by the photothermal deflection spectroscopyBEAUDOIN, M; CHAN, I. C. W; BEATON, D et al.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1662-1665, issn 0022-0248, 4 p.Conference Paper

Carrier injection efficiency in nitride LEDsLEE, Dong S; BYRNES, Daniel; PAREKH, Aniruddh et al.Journal of crystal growth. 2008, Vol 310, Num 23, pp 5158-5161, issn 0022-0248, 4 p.Conference Paper