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kw.\*:("B2. Semiconducting indium arsenide")

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The Kondo effect observed up to TK∼80K in self-assembled InAs quantum dots laterally coupled to nanogap electrodesSHIBATA, K; HIRAKAWA, K.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1795-1798, issn 0022-0248, 4 p.Conference Paper

Growth of red InP/GaInP quantum dots on a low density InAs/GaAs island seed layer by MOVPEROBBACH, R; SCHULZ, W.-M; REISCHLE, M et al.Journal of crystal growth. 2008, Vol 310, Num 23, pp 5089-5092, issn 0022-0248, 4 p.Conference Paper

Transport properties of InSb and InAs thin films on GaAs substratesOKAMOTO, Atsushi; GEKA, Hirotaka; SHIBASAKI, Ichiro et al.Journal of crystal growth. 2005, Vol 278, Num 1-4, pp 604-609, issn 0022-0248, 6 p.Conference Paper

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