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Photovoltaic materials and crystal growth research and development in the Gigawatt eraCISZEK, T. F.Journal of crystal growth. 2014, Vol 393, pp 2-6, issn 0022-0248, 5 p.Conference Paper

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Solid-source boron doping of float-zoned siliconCISZEK, T. F.Journal of crystal growth. 2004, Vol 264, Num 1-3, pp 116-122, issn 0022-0248, 7 p.Article

Strong and stable red photoluminescence from porous silicon prepared by Fe-contaminated siliconLEE, D. Y; PARK, J. W; BAE, I. H et al.Journal of crystal growth. 2004, Vol 260, Num 3-4, pp 394-399, issn 0022-0248, 6 p.Article

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A kinetic model of the formation and growth of interstitial dislocation loops in dislocation free silicon single crystalsTALANIN, V. I; TALANIN, I. E.Journal of crystal growth. 2012, Vol 346, Num 1, pp 45-49, issn 0022-0248, 5 p.Article

Float-Zone silicon crystal growth at reduced RF frequenciesROST, H.-J; MENZEL, R; LUEDGE, A et al.Journal of crystal growth. 2012, Vol 360, pp 43-46, issn 0022-0248, 4 p.Conference Paper

Local control of strain in SiGe by ion-implantation techniqueSAWANO, K; HOSHI, Y; HIRAOKA, Y et al.Journal of crystal growth. 2009, Vol 311, Num 3, pp 806-808, issn 0022-0248, 3 p.Conference Paper

Silicon shot solidification in waterCISZEK, T. F.Journal of crystal growth. 2008, Vol 310, Num 7-9, pp 2198-2203, issn 0022-0248, 6 p.Article

The effect of the pressure difference across the free surface on the static meniscus shape in the case of ribbon growth by edge-defined film-fed growth (E.F.G.) methodBALIN, St; BALINT, A. M.Journal of crystal growth. 2008, Vol 311, Num 1, pp 32-37, issn 0022-0248, 6 p.Article

Single-grain Si TFTs and circuits fabricated through advanced excimer-laser crystallizationISHIHARA, Ryoichi; RANA, Vikas; MING HE et al.Solid-state electronics. 2008, Vol 52, Num 3, pp 353-358, issn 0038-1101, 6 p.Conference Paper

The effect of a static magnetic field on buoyancy-aided silicon dissolution into germanium meltARMOUR, Neil; DOST, Sadik.Journal of crystal growth. 2007, Vol 306, Num 1, pp 200-207, issn 0022-0248, 8 p.Article

Effect of electromagnetic stirring on the enrichment of primary silicon from Al―Si meltWENZHOU YU; WENHUI MA; GUOQIANG LV et al.Journal of crystal growth. 2014, Vol 405, pp 23-28, issn 0022-0248, 6 p.Article

Annealing effects on the size of Si-nanocrystals embedded in bulk SiOWEIWEI KE; XUE FENG; YIDONG HUANG et al.Journal of crystal growth. 2011, Vol 316, Num 1, pp 191-195, issn 0022-0248, 5 p.Article

Growth of 450 mm diameter semiconductor grade silicon crystalsZHENG LU; KIMBEL, Steven.Journal of crystal growth. 2011, Vol 318, Num 1, pp 193-195, issn 0022-0248, 3 p.Conference Paper

Optimizing dopant activation in Si:P double δ-layersMCKIBBIN, Sarah R; CLARKE, Warrick R; FUHRER, Andreas et al.Journal of crystal growth. 2010, Vol 312, Num 21, pp 3247-3250, issn 0022-0248, 4 p.Article

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Gas phase nucleation of crystalline silicon and their role in low-temperature deposition of microcrystalline films during hot-wire chemical vapor depositionLEE, Sung-Soo; KO, Min-Sung; KIM, Chan-Soo et al.Journal of crystal growth. 2008, Vol 310, Num 15, pp 3659-3662, issn 0022-0248, 4 p.Article