kw.\*:("B2. Silicon")
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Investigation of nitrogen behaviors during Czochralski silicon crystal growthXUEGONG YU; DEREN YANG; HOSHIKAWA, Keigo et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 178-182, issn 0022-0248, 5 p.Conference Paper
Development of grain structures of multi-crystalline silicon from randomly orientated seeds in directional solidificationWONG, Y. T; HSU, C; LAN, C. W et al.Journal of crystal growth. 2014, Vol 387, pp 10-15, issn 0022-0248, 6 p.Article
On the growth mechanism of polycrystalline silicon thin film by Al-induced layer exchange processUSAMI, Noritaka; JUNG, Mina; SUEMASU, Takashi et al.Journal of crystal growth. 2013, Vol 362, pp 16-19, issn 0022-0248, 4 p.Conference Paper
Combined effect of DC magnetic fields and free surface stresses on the melt flow and crystallization front formation during 400 mm diameter Si Cz crystal growthKALAEV, V. V.Journal of crystal growth. 2007, Vol 303, Num 1, pp 203-210, issn 0022-0248, 8 p.Conference Paper
3D modelling of stresses and deformations during crystallisation of silicon accounting for ingot-crucible interactionsM'HAMDI, Mohammed; GOUTTEBROZE, Sylvain; FJAER, Hallvard G et al.Journal of crystal growth. 2013, Vol 362, pp 83-87, issn 0022-0248, 5 p.Conference Paper
Thermo-mechanical analysis of the ingot-crucible contact during multi-crystalline silicon ingot castingM'HAMDI, Mohammed; GOUTTEBROZE, Sylvain; FJAER, Hallvard G et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 269-274, issn 0022-0248, 6 p.Conference Paper
Growth behavior of faceted Si crystals at grain boundary formationFUJIWARA, K; TSUMURA, S; TOKAIRIN, M et al.Journal of crystal growth. 2009, Vol 312, Num 1, pp 19-23, issn 0022-0248, 5 p.Article
Silicon optical waveguide modulator incorporating a hybrid structure of transistor and p+-n--n+ diodeCHUANG, Ricky W; LIAO, Zhen-Liang; CHENG, Chih-Chieh et al.Journal of crystal growth. 2009, Vol 311, Num 3, pp 833-836, issn 0022-0248, 4 p.Conference Paper
Improvement of multi-crystalline silicon ingot growth by using diffusion barriersHSIEH, C. C; LAN, A; HSU, C et al.Journal of crystal growth. 2014, Vol 401, pp 727-731, issn 0022-0248, 5 p.Conference Paper
Effect of Ge doping on the kinetics of iron―boron pair association and dissociation in photovoltaic siliconXIAODONG ZHU; XUEGONG YU; XIAOQIANG LI et al.Journal of crystal growth. 2012, Vol 348, Num 1, pp 20-24, issn 0022-0248, 5 p.Article
Purification of silicon for photovoltaic applicationsDELANNOY, Yves.Journal of crystal growth. 2012, Vol 360, pp 61-67, issn 0022-0248, 7 p.Conference Paper
Growth of single-crystalline ZnO film with two-dimensional periodic structure on Si(111) substrate by molecular beam epitaxyCUR, X. Z; ZHANG, T. C; MEI, Z. X et al.Journal of crystal growth. 2008, Vol 310, Num 24, pp 5428-5431, issn 0022-0248, 4 p.Article
Analysis of 3D unsteady melt flow and crystallization front geometry during a casting process for silicon solar cellsKULIEV, A. T; DURNEV, N. V; KALAEV, V. V et al.Journal of crystal growth. 2007, Vol 303, Num 1, pp 236-240, issn 0022-0248, 5 p.Conference Paper
Fabrication of silicon-on-insulator structure with Si3N4 as buried insulating films by epitaxial layer transferXINYUN XIE; NINGLIN ZHANG; CHUANLING MEN et al.Journal of crystal growth. 2002, Vol 245, Num 3-4, pp 207-211, issn 0022-0248Article
In situ diagnostics of the SiC nanostructures growth processDABROWSKA, A; BZYMEK, A; HUCZKO, A et al.Journal of crystal growth. 2014, Vol 401, pp 376-380, issn 0022-0248, 5 p.Conference Paper
Distinctions in the Ge wetting layer formation and self-assembled island nucleation between single- and multilayer SiGe/Si(0 0 1) structuresYURASOV, D. V; SHALEEV, M. V; NOVIKOV, A. V et al.Journal of crystal growth. 2010, Vol 313, Num 1, pp 12-15, issn 0022-0248, 4 p.Article
Silicon nanowire growth by electron beam evaporation : Kinetic and energetic contributions to the growth morphologySIVAKOV, Vladimir; HEYROTH, Frank; FALK, Fritz et al.Journal of crystal growth. 2007, Vol 300, Num 2, pp 288-293, issn 0022-0248, 6 p.Article
Floating zone growth of Si-rich SiGe bulk crystal using pre-synthesized SiGe feed rod with uniform compositionUSAMI, Noritaka; KITAMURA, Masayuki; OBARA, Kazuo et al.Journal of crystal growth. 2005, Vol 284, Num 1-2, pp 57-64, issn 0022-0248, 8 p.Article
Increased nitrogen doping of thin lateral SiC cantileversTRUNEK, Andrew J; NEUDECK, Philip G; MATOCHA, Kevin et al.Journal of crystal growth. 2008, Vol 310, Num 7-9, pp 1794-1798, issn 0022-0248, 5 p.Article
Bulk multicrystalline silicon growth for photovoltaic (PV) applicationBEI WU; STODDARD, Nathan; RONGHUI MA et al.Journal of crystal growth. 2008, Vol 310, Num 7-9, pp 2178-2184, issn 0022-0248, 7 p.Article
Study of the 3C-SiC nucleation from a liquid phase on a C face 6H-SiC substrateKIM-HALC, Olivier; FERRO, Gabriel; DAZORD, Jacques et al.Journal of crystal growth. 2009, Vol 311, Num 8, pp 2385-2390, issn 0022-0248, 6 p.Article
Incorporation of group III, IV and V elements in 3C-SiC(1 1 1) layers grown by the vapour-liquid-solid mechanismLORENZZI, J; ZOULIS, G; CAROLE, D et al.Journal of crystal growth. 2010, Vol 312, Num 23, pp 3443-3450, issn 0022-0248, 8 p.Article
Influence of crystalline defects in Czochralski-grown Si multicrystal on minority carrier lifetimeTAISHI, Toshinori; HOSHIKAWA, Takeshi; YAMATANI, Muneyoshi et al.Journal of crystal growth. 2007, Vol 306, Num 2, pp 452-457, issn 0022-0248, 6 p.Article
Large-grained poly-silicon thin films by aluminium-induced crystallisation of microcrystalline siliconEKANAYAKE, G; QUINN, T; REEHAL, H. S et al.Journal of crystal growth. 2006, Vol 293, Num 2, pp 351-358, issn 0022-0248, 8 p.Article
Segregation coefficients of various dopants in SixGe1-x (0.93<x<0.96) single crystalsYONENAGA, I; AYUZAWA, T.Journal of crystal growth. 2006, Vol 297, Num 1, pp 14-19, issn 0022-0248, 6 p.Article
