CZOCHRALSKI PULLING OF COBALT AND OF COBALT-RICH COBALT/IRON ALLOY CRYSTALSBACHMANN KJ; WAKIYAMA T.1975; J. CRYST. GROWTH; NETHERL.; DA. 1975; VOL. 30; NO 3; PP. 327-334; BIBL. 7 REF.Article

PHASE EQUILIBRIA AND VAPOR PRESSURES OF PURE PHOSPHORUS AND OF THE INDIUM/PHOSPHORUS SYSTEMS AND THEIR IMPLICATIONS REGARDING CRYSTAL GROWTH OF INP.BACHMANN KJ; BUEHLER E.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 6; PP. 835-846; BIBL. 41 REF.Article

THE GROWTH OF IN-RICH BULK SINGLE CRYSTALS OF GA_XIN_1-XP_YAS_1-Y VIA THE GRADIENT FREEZE METHOD.BACHMANN KJ; THIEL FA; FERRIS S et al.1978; J. CRYST. GROWTH; NLD; DA. 1978; VOL. 43; NO 6; PP. 752-755; BIBL. 24 REF.Article

ELECTRON BEAM FLOAT ZONE GROWTH OF NIOBIUM-TANTALUM ALLOY CRYSTALSRUBIN JJ; MALM DL; BACHMANN KJ et al.1972; MATER. RES. BULL.; U.S.A.; DA. 1972; VOL. 7; NO 6; PP. 597-602; BIBL. 4 REF.Serial Issue

THE LOW TEMPERATURE HEAT CAPACITIES OF SNO₂ AND IN₂O₃BACHMANN KJ; HSU FSL; REMEIKA JP et al.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 57; NO 1; PP. K39-K42; BIBL. 6 REF.Article

MELT AND SOLUTION GROWTH OF BULK SINGLE CRYSTALS OF QUATERNARY III-V ALLOYSBACHMANN KJ; THIEL FA; SCHREIBER H JR et al.1979; PROGR. CRYST. GROWTH CHARACTER.; GBR; DA. 1979; VOL. 2; NO 3; PP. 171-206; BIBL. 131 REF.Article

MOLECULAR BEAM EPITAXIAL GROWTH OF INP.MCFEE JH; MILLER BI; BACHMANN KJ et al.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 2; PP. 259-272; BIBL. 49 REF.Article

LOW ENERGY ELECTRON LOSS STUDIES OF CUINSE₂ SURFACESJAMJOUM O; KAZMERSKI LL; LICHTMAN DL et al.1982; SURFACE AND INTERFACE ANALYSIS; ISSN 0142-2421; GBR; DA. 1982; VOL. 4; NO 6; PP. 227-229; BIBL. 21 REF.Article

DEBYE TEMPERATURE AND STANDARD ENTROPIES AND ENTHALPIES OF COMPOUND SEMICONDUCTORS OF THE TYPE I-III-VI₂.BACHMANN KJ; HSU FSL; THIEL FA et al.1977; J. ELECTRON. MATER.; U.S.A.; DA. 1977; VOL. 6; NO 4; PP. 431-448; BIBL. 2 P.Article

INP/CDS SOLAR CELLS.SHAY JL; BETTINI M; WAGNER S et al.1976; IN: PHOTOVOLTAIC SPEC. CONF. 12; BATON ROUGE, LA.; 1976; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1976; PP. 540-543; BIBL. 10 REF.Conference Paper

POLYCRYSTALLINE THIN-FILM INP/CDS SOLAR CELL.BACHMANN KJ; BUEHLER E; SHAY JL et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 2; PP. 121-123; BIBL. 8 REF.Article

PREPARATION OF P-TYPE INP FILMS ON INSULTING AND CONDUCTING SUBSTRATES VIA CHEMICAL VAPOR DEPOSITION.BACHMANN KJ; BUEHLER E; SHAY JL et al.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 10; PP. 1509-1513; BIBL. 15 REF.Article

ELECTROLYTE-OXIDE-SEMICONDUCTOR JUNCTION AT THE P-INP/V²⁺-V³⁺ INTERFACEMENEZES S; LEWERENZ HJ; THIEL FA et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 9; PP. 710-712; BIBL. 13 REF.Article

DEFECTS IN INP HOMOEPITAXIAL LAYERS.MAHAJAN S; BACHMANN KJ; BRASEN D et al.1978; J. APPL. PHYS.; U.S.A.; DA. 1978; VOL. 49; NO 1; PP. 245-248; BIBL. 19 REF.Article

A SIMPLE MEASUREMENT OF ABSOLUTE SOLAR-CELL EFFICIENCY.SHAY JL; WAGNER S; EPWORTH RW et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 11; PP. 4853-4855; BIBL. 2 REF.Article

LIQUID ENCAPSULATED CZOCHRALSKI PULLING OF INP CRYSTALS.BACHMANN KJ; BUEHLER E; SHAY JL et al.1975; J. ELECTRON. MATER.; U.S.A.; DA. 1975; VOL. 4; NO 2; PP. 389-406; BIBL. 1 P. 1/2Article

OXIDE OPTIMIZATION AT THE P-SI/AQUEOUS ELECTROLYTE INTERFACELEWERENZ HJ; LUEBKE M; BACHMANN KJ et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 10; PP. 798-800; BIBL. 22 REF.Article

INP-CDS SOLAR CELLS.SHAY JL; WAGNER S; BETTINI M et al.1977; I.E.E.E. TRANS. ELECTRON. DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 4; PP. 483-486; BIBL. 10 REF.Article

PREPARATION AND PROPERTIES OF INP/CDS SOLAR CELLS. = PREPARATION ET PROPRIETES DE CELLULES SOLAIRES A INP/CDSSHAY JL; WAGNER S; BACHMANN KJ et al.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 2; PP. 614-618; BIBL. 16 REF.Article

P-INP/N-CDS SOLAR CELLS AND PHOTOVOLTAIC DETECTORS.WAGNER S; SHAY JL; BACHMANN KJ et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 5; PP. 229-230; BIBL. 11 REF.Article

THE PREPARATION OF GA-RICH GA_XIM_1-XSB ALLOY CRYSTALSBACHMANN KJ; THIEL FA; SCHREIBER H JR et al.1980; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1980; VOL. 9; NO 2; PP. 445-452; BIBL. 16 REF.Article

AN EFFICIENT PHOTOCATHODE FOR SEMICONDUCTOR LIQUID JUNCTION CELLS: 9,4% SOLAR CONVERSION EFFICIENCY WITH P-INP/VCL₃-VCL₂-HCL/CHELLER A; MILLER B; LEWERENZ HJ et al.1980; J. AM. CHEM. SOC.; ISSN 0002-7863; USA; DA. 1980; VOL. 102; NO 21; PP. 6555-6556; BIBL. 41 REF.Article

PREPARATION OF CDS/INP SOLAR CELLS BY CHEMICAL VAPOR DEPOSITION OF CDS.BETTINI M; BACHMANN KJ; BUEHLER E et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 4; PP. 1603-1606; BIBL. 15 REF.Article

IMPROVED EFFICIENCY AND LIFETIME STUDY OF INP/CDS SOLAR CELLS.WAGNER S; SHAY JL; BACHMANN KJ et al.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 102-104; BIBL. 2 REF.Conference Paper

N-INDIUM TIN OXIDE/P-INDIUM PHOSPHIDE SOLAR CELLS.SREE HARSHA KS; BACHMANN KJ; SCHMIDT PH et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 12; PP. 645-646; BIBL. 11 REF.Article