Deposition of tungsten by plasma enhanced chemical vapour depositionBAIN, M. F; ARMSTRONG, B. M; GAMBLE, H. S et al.Journal de physique. IV. 1999, Vol 9, Num 8, pp Pr8.827-Pr8.833, issn 1155-4339, 2Conference Paper

Selective deposition of CVD iron on silicon dioxide and tungstenLOW, Y. H; BAIN, M. F; BIEN, D. C. S et al.Microelectronic engineering. 2006, Vol 83, Num 11-12, pp 2229-2233, issn 0167-9317, 5 p.Conference Paper

The deposition and characterisation of CVD tungsten silicide for applications in microelectronicsBAIN, M. F; ARMSTRONG, B. M; GAMBLE, H. S et al.Vacuum. 2002, Vol 64, Num 3-4, pp 227-232, issn 0042-207XConference Paper

Fabrication of sub-micron active layer SSOI substrates using ion splitting and wafer bonding technologiesRUDDELL, F. H; BAIN, M. F; SUDER, S et al.Proceedings - Electrochemical Society. 2003, pp 25-30, issn 0161-6374, isbn 1-56677-402-0, 6 p.Conference Paper

Fabrication of sub-micron active layer SSOI substrates using ion splitting and wafer bonding technologiesRUDDELL, F. H; BAIN, M. F; SUDER, S et al.Proceedings - Electrochemical Society. 2003, pp 57-62, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Fabrication and characterisation of high resistivity SOI substrates for monolithic high energy physics detectorsRUDDELL, F. H; SUDER, S. L; MARCZEWSKI, J et al.Solid-state electronics. 2008, Vol 52, Num 12, pp 1849-1853, issn 0038-1101, 5 p.Conference Paper

Chemical bonding modifications of tetrahedral amorphous carbon and nitrogenated tetrahedral amorphous carbon films induced by rapid thermal annealingMCCANN, R; ROY, S. S; PAPAKONSTANTINOU, P et al.Thin solid films. 2005, Vol 482, Num 1-2, pp 34-40, issn 0040-6090, 7 p.Conference Paper

Effect of deposition temperature on the formation of CoSi₂through the rapid thermal annealing of CVD cobaltBAIN, M. F; DEO, N; ARMSTRONG, B. M et al.Microelectronic engineering. 2004, Vol 76, Num 1-4, pp 336-342, issn 0167-9317, 7 p.Conference Paper