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POSSIBILITE DE REDUCTION DES CONSEQUENCES DES SEGREGATIONS PAR MODIFICATION DU DELAI D'ENFOURNEMENT ET DE LA DUREE DE MAINTIEN DANS LES FOURS PITSBAJ M.1975; ; S.L.; DA. 1975; DE L'ITAL.: METALLURGIA (LA) ITALIANA, JUIN 1968; 60, NO 6Miscellaneous

INFLUENCE OF PRESSURE ON THE ELECTRON CONCENTRATION AND MOBILITY IN HGSE AT 77 K.BAJ M; POROWSKI S.1974; HIGH TEMPER.-HIGH PRESS.; G.B.; DA. 1974; VOL. 6; NO 1; PP. 95-100; BIBL. 13 REF.Article

HIGH PRESSURE INVESTIGATION OF FERROELECTRIC PHASE TRANSITION IN PBSNTESUSKI T; DMOWSKI L; BAJ M et al.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 38; NO 1; PP. 59-62; BIBL. 27 REF.Article

PRESSURE INVESTIGATIONS OF CAPACITANCE OF PBGETEP-N JUNCTION DIODESUSKI T; BAJ M; MURASE K et al.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 12; PP. L377-L379; BIBL. 14 REF.Article

PRESSURE INDUCED PHASE TRANSITION IN PBSNTESUSKI T; BAJ M; ZUCZKOWSKI W et al.1979; SOLID STATE COMMUNIC.; GBR; DA. 1979; VOL. 30; NO 2; PP. 77-80; BIBL. 21 REF.Article

A NEW EXPLANATION OF THE CL DONOR DEIONIZATION AND ITS KINETICS OBSERVED IN CDTE: CL UNDER HYDROSTATIC PRESSURE.BAJ M; DMOWSKI L; KONCZYKOWSKI M et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 33; NO 1; PP. 421-426; ABS. ALLEM.; BIBL. 7 REF.Article

The dielectric constant in narrow-gap semiconductorsTRZECIAKOWSKI, W; BAJ, M.Solid state communications. 1984, Vol 52, Num 7, pp 669-671, issn 0038-1098Article

The explanation of the so-called Auger-like thermal recovery of the EL2 defect in n-type GaAsDRESZER, P; BAJ, M.Journal of applied physics. 1991, Vol 70, Num 5, pp 2679-2687, issn 0021-8979Article

Metastable state of EL2 defect in GaAs under hydrostatic pressureDRESZER, P; BAJ, M.Acta physica Polonica. A. 1988, Vol 73, Num 2, pp 219-221, issn 0587-4246Article

Intraconduction band magneto-optical study of InSb under hydrostatic pressure = Magnetooptische Untersuchung innerhalb des Leitungsbandes von InSb unter hydrostatischem DruckHUANT, S; DMOWSKI, L; BAJ, M et al.Physica status solidi. B. Basic research. 1984, Vol 125, Num 1, pp 215-219, issn 0370-1972Article

Direct proof of two-electron occupation of Ge-DX centers in GaAs codoped with Ge and TeBAJ, M; DMOWSKI, L. H; SŁUPINSKI, T et al.Physical review letters. 1993, Vol 71, Num 21, pp 3529-3532, issn 0031-9007Article

Absorption and photocurrent spectra of Ti-doped InP crystals under hydrostatic pressureWASIK, D; BAJ, M; HENNEL, A. M et al.Acta physica Polonica. A. 1990, Vol 77, Num 1, pp 75-78, issn 0587-4246Article

Pressure-induced negative charge state of the EL2 defect in it metastable configurationBAJ, M; DRESZER, P; BABINSKI, A et al.Physical review. B, Condensed matter. 1991, Vol 43, Num 3, pp 2070-2080, issn 0163-1829, 11 p.Article

Titanium acceptor state in InPWASIK, D; BAJ, M; HENNEL, A. M et al.Acta physica Polonica. A. 1988, Vol 73, Num 2, pp 243-245, issn 0587-4246Article

Co1+(3d8) double acceptor state in GaAsWASIK, D; BAJ, M; HENNEL, A. M et al.Physical review. B, Condensed matter. 1986, Vol 34, Num 6, pp 4099-4104, issn 0163-1829Article

Intraconduction band magneto-optical study of InSb under hydrostatic pressureHUANT, S; DMOWSKI, L; BAJ, M et al.Physica status solidi. B. Basic research. 1984, Vol 125, Num 1, pp 215-219, issn 0370-1972Article

Structural and magnetic phase transitions in CoxNi1-xMnGe system under pressureNIZIOL, S; ZIEBA, A; ZACH, R et al.Journal of magnetism and magnetic materials. 1983, Vol 38, Num 2, pp 205-213, issn 0304-8853Article

Shallow donors in magnetic fields in zinc-blende semiconductors. I: TheoryTRZECIAKOWSKI, W; BAJ, M; HUANT, S et al.Physical review. B, Condensed matter. 1986, Vol 33, Num 10, pp 6846-6862, issn 0163-1829Article

Shallow donors in magnetic fields in zinc-blende semiconductors. II: Magneto-optical study of InSb under hydrostatic pressureBRUNEL, L.-C; HUANT, S; BAJ, M et al.Physical review. B, Condensed matter. 1986, Vol 33, Num 10, pp 6863-6873, issn 0163-1829Article

Pressure dependence of the electronic effective mass and effective g-factor in the narrow gap semiconductor InSbHUANT, S; DMOWSKI, L; BAJ, M et al.Physica status solidi. B. Basic research. 1986, Vol 135, Num 2, pp K129-K132, issn 0370-1972Article

High-magnetic-field and high-hydrostatic-pressure investigation of hydrogenic- and resonant-impurity states in n-type indium arsenideKADRI, A; AULOMBARD, R. L; ZITOUNI, K et al.Physical review. B, Condensed matter. 1985, Vol 31, Num 12, pp 8013-8023, issn 0163-1829Article

Direct evidence of the two-electron character of DX centers based on co-doping with shallow donors and application of high pressureBAJ, M; DMOWSKI, L. H.The Journal of physics and chemistry of solids. 1995, Vol 56, Num 3-4, pp 589-593, issn 0022-3697Conference Paper

New impurity related transitions in n-InSbHUANT, S; BRUNEL, L. C; BAJ, M et al.Solid state communications. 1985, Vol 54, Num 2, pp 131-133, issn 0038-1098Article

Model of the metastable center in indium antimonide: comment on pressure-dependent compensation in InSbPIOTRZKOWSKI, R; DMOWSKI, L; BAJ, M et al.Physical review. B, Condensed matter. 1985, Vol 32, Num 4, pp 2649-2652, issn 0163-1829Article

Prokinetic effect of indoramin, an α-adrenergic antagonist, on human gall-bladderSENGUPTA, S; COONEY, R; BAJ, M et al.Alimentary pharmacology & therapeutics. 2002, Vol 16, Num 10, pp 1801-1803, issn 0269-2813, 3 p.Article

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