A NOVEL PHOTOCONDUCTIVITY LIFETIME MEASUREMENT TECHNIQUE.BALIGA BJ.1977; INTERNATION. J. ELECTRON.; G.B.; DA. 1977; VOL. 42; NO 5; PP. 505-510; BIBL. 4 REF.Article

THE DV/DT CAPABILITY OF FIELD-CONTROLLED THYRISTORSBALIGA BJ.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 6; PP. 612-616; BIBL. 12 REF.Article

A POWER JUNCTION GATE FIELD-EFFECT TRANSISTOR STRUCTURE WITH HIGH BLOCKING GAINBALIGA BJ.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 2; PP. 368-373; BIBL. 14 REF.Article

CONDUCTIVITY OF COMPLEMENTARY ERROR FUNCTION N-TYPE DIFFUSED LAYERS IN GALLIUM ARSENIDE.BALIGA BJ.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 4; PP. 321-322; BIBL. 7 REF.Article

SEMICONDUCTORS FOR HIGH-VOLTAGE, VERTICAL CHANNEL FIELD EFFECT TRANSISTORSBALIGA BJ.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 3; PART. 1; PP. 1759-1764; BIBL. 23 REF.Article

SWITCHING LOTS OF WATTS AT HIGH SPEEDSBALIGA BJ.1981; IEEE SPECTRUM; ISSN 0018-9235; USA; DA. 1981; VOL. 18; NO 12; PP. 42-48Article

RECOMBINATION LEVEL SELECTION CRITERIA FOR LIFETIME REDUCTION IN INTEGRATED CIRCUITSBALIGA BJ.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 8; PP. 1033-1038; BIBL. 9 REF.Article

KINETICS OF THE EPITAXIAL GROWTH OF SILICON FROM A TIN MELT.BALIGA BJ.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 10; PP. 1627-1631; BIBL. 9 REF.Article

HIGH GAIN POWER SWITCHING USING FIELD CONTROLLED THYRISTORSBALIGA BJ.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 5; PP. 345-353; BIBL. 8 REF.Article

ENHANCEMENT- AND DEPLETION-MODE VERTICAL-CHANNEL M.O.S. GATED THYRISTORSBALIGA BJ.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 20; PP. 645-647; BIBL. 5 REF.Article

COMPARISON GOLD, PLATINUM, AND ELECTRON IRRADIATION FOR CONTROLLING LIFETIME IN POWER RECTIFIERS.BALIGA BJ; SUN E.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 6; PP. 685-688; BIBL. 8 REF.Article

LATERAL DIFFUSION OF ZINC AND TIN IN GALLIUM ARSENIDE.BALIGA BJ; GHANDHI SK.1974; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 7; PP. 410-415; BIBL. 12 REF.Article

MEASUREMENT OF CARRIER LIFETIME PROFILES IN DIFFUSED LAYERS OF SEMICONDUCTORSBALIGA BJ; ADLER MS.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 4; PP. 472-477; BIBL. 14 REF.Article

VERTICAL CHANNEL FIELD-CONTROLLED THYRISTORS WITH HIGH GAIN AND FAST SWITCHING SPEEDSWESSELS BW; BALIGA BJ.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 10; PP. 1261-1265; BIBL. 8 REF.Article

MODIFICATION OF SCHOTTKY BARRIERS IN SILICON BY REACTIVE ION ETCHING WITH NF₃ASHOK S; CHOW TP; BALIGA BJ et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 8; PP. 687-689; BIBL. 17 REF.Article

OPTIMUM SEMICONDUCTORS FOR POWER FIELD EFFECT TRANSISTORSBALIGA BJ; ADLER MS; OLIVER DW et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 7; PP. 162-164; BIBL. 9 REF.Article

MEASUREMENT OF HEAVY DOPING PARAMETERS IN SILICON BY ELECTRON BEAM INDUCED CURRENTPOSSIN GE; ADLER MS; BALIGA BJ et al.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 5; PP. 983-990; BIBL. 31 REF.Article

ANTIMONY-DOPED TIN OXIDE FILMS DEPOSITED BY THE OXIDATION OF TETRAMETHYLTIN AND TRIMETHYLANTIMONYCHOW TP; GHEZZO M; BALIGA BJ et al.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 5; PP. 1040-1045; BIBL. 20 REF.Article

OPEN TUBE DIFFUSION OF ZINC IN GALLIUM ARSENIDESHEALY JR; BALIGA BJ; GHANDHI SK et al.1980; IEEE ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 6; PP. 119-121; BIBL. 11 REF.Article

LIFETIME CONTROL BY PALLADIUM DIFFUSION IN SILICONSO L; WHITELEY JS; GHANDHI SK et al.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 6; PP. 887-890; BIBL. 8 REF.Article

LOW TEMPERATURE ALUMINUM OXIDE DEPOSITION USING TRIMETHYLALUMINUMEHLE RS; BALIGA BJ; KATZ W et al.1983; JOURNAL OF ELECTRONIC MATERIALS; ISSN 0361-5235; USA; DA. 1983; VOL. 12; NO 3; PP. 587-601; BIBL. 11 REF.Article

COMPOSITION DEPENDENCE OF ENERGY GAP IN GAINAS ALLOYS.BALIGA BJ; BHAT R; GHANDHI SK et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 10; PP. 4608; BIBL. 10 REF.Article

BREAKDOWN CHARACTERISTICS OF GALLIUM ARSENIDEBALIGA BJ; EHLE R; SHEALY JR et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 11; PP. 302-304; BIBL. 9 REF.Article

LOW-TEMPERATURE SINTERED AUGE/GAAS OHMIC CONTACTAINA O; KATZ W; BALIGA BJ et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 1; PP. 777-780; BIBL. 14 REF.Article

BREAKDOWN STABILITY OF GOLD, ALUMINUM, AND TUNGSTEN SCHOTTKY BARRIERS ON GALLIUM ARSENIDEBALIGA BJ; EHLE R; SEARS A et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 7; PP. 177-179; BIBL. 8 REF.Article