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HIGH TEMPERATURE CHARACTERISTICS OF BIPOLAR MODE POWER JFET OPERATIONBALIGA BJ.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 5; PP. 143-145; BIBL. 8 REF.Article

THE MAJIC-FET: A HIGH SPEED SWITCH WITH LOW ON-RESISTANCEBALIGA BJ.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 7; PP. 189-191; BIBL. 6 REF.Article

BURIED-GRID FIELD-CONTROLLED THYRISTORS FABRICATED USING SILICON LIQUID-PHASE EPITAXYBALIGA BJ.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 11; PP. 2141-2145; BIBL. 12 REF.Article

GRID DEPTH DEPENDENCE OF THE CHARACTERISTICS OF VERTICAL CHANNEL FIELD CONTROLLED THYRISTORSBALIGA BJ.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 3; PP. 237-239; BIBL. 7 REF.Article

ISOTHERMAL SILICON LIQUID PHASE EPITAXY FROM SUPERSATURATED TIN.BALIGA BJ.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 4; PP. 598-600; BIBL. 9 REF.Article

A NOVEL PHOTOCONDUCTIVITY LIFETIME MEASUREMENT TECHNIQUE.BALIGA BJ.1977; INTERNATION. J. ELECTRON.; G.B.; DA. 1977; VOL. 42; NO 5; PP. 505-510; BIBL. 4 REF.Article

THE DV/DT CAPABILITY OF FIELD-CONTROLLED THYRISTORSBALIGA BJ.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 6; PP. 612-616; BIBL. 12 REF.Article

A POWER JUNCTION GATE FIELD-EFFECT TRANSISTOR STRUCTURE WITH HIGH BLOCKING GAINBALIGA BJ.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 2; PP. 368-373; BIBL. 14 REF.Article

CONDUCTIVITY OF COMPLEMENTARY ERROR FUNCTION N-TYPE DIFFUSED LAYERS IN GALLIUM ARSENIDE.BALIGA BJ.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 4; PP. 321-322; BIBL. 7 REF.Article

SEMICONDUCTORS FOR HIGH-VOLTAGE, VERTICAL CHANNEL FIELD EFFECT TRANSISTORSBALIGA BJ.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 3; PART. 1; PP. 1759-1764; BIBL. 23 REF.Article

SWITCHING LOTS OF WATTS AT HIGH SPEEDSBALIGA BJ.1981; IEEE SPECTRUM; ISSN 0018-9235; USA; DA. 1981; VOL. 18; NO 12; PP. 42-48Article

RECOMBINATION LEVEL SELECTION CRITERIA FOR LIFETIME REDUCTION IN INTEGRATED CIRCUITSBALIGA BJ.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 8; PP. 1033-1038; BIBL. 9 REF.Article

KINETICS OF THE EPITAXIAL GROWTH OF SILICON FROM A TIN MELT.BALIGA BJ.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 10; PP. 1627-1631; BIBL. 9 REF.Article

REFILLING SILICON GROOVES BY LIQUID PHASE EPITAXYBALIGA BJ.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 12; PP. 2819-2823; BIBL. 8 REF.Article

THE DI/DT CAPABILITY OF FIELD-CONTROLLED THYRISTORSBALIGA BJ.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 7; PP. 583-588; BIBL. 8 REF.Article

BORON AUTODOPING DURING SILICON LIQUID PHASE EPITAXYBALIGA BJ.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 1; PP. 161-165; BIBL. 13 REF.Article

DOPANT DISTRIBUTION IN SILICON LIQUID PHASE EPITAXIAL LAYERS: MELTBACK EFFECTSBALIGA BJ.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 1; PP. 138-143; BIBL. 6 REF.Article

BURIED-GRID FABRICATION BY SILICON LIQUID-PHASE EPITAXYBALIGA BJ.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 11; PP. 789-790; BIBL. 8 REF.Article

MORPHOLOGY OF SILICON EPITAXIAL LAYERS GROWN BY UNDERCOOLING OF A SATURATED TIN MELT.BALIGA BJ.1977; J. CRYST. GROWTH; NETHERL.; DA. 1977; VOL. 41; NO 2; PP. 199-204; BIBL. 14 REF.Article

HIGH GAIN POWER SWITCHING USING FIELD CONTROLLED THYRISTORSBALIGA BJ.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 5; PP. 345-353; BIBL. 8 REF.Article

ENHANCEMENT- AND DEPLETION-MODE VERTICAL-CHANNEL M.O.S. GATED THYRISTORSBALIGA BJ.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 20; PP. 645-647; BIBL. 5 REF.Article

COMPARISON GOLD, PLATINUM, AND ELECTRON IRRADIATION FOR CONTROLLING LIFETIME IN POWER RECTIFIERS.BALIGA BJ; SUN E.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 6; PP. 685-688; BIBL. 8 REF.Article

LATERAL DIFFUSION OF ZINC AND TIN IN GALLIUM ARSENIDE.BALIGA BJ; GHANDHI SK.1974; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 7; PP. 410-415; BIBL. 12 REF.Article

A SIMPLE METHOD FOR PREDICTING THE FOUWARD BLOCKING GAIN OF GRIDDED FIELD EFFECT DEVICES WITH RECTANGULAR GRIDSADLER MS; BALIGA BJ.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 7; PP. 735-740; BIBL. 14 REF.Article

PLANAR DIFFUSION IN GALLIUM ARSENIDE FROM TIN-DOPED OXIDESBALIGA BJ; GHANDHI SK.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 1; PP. 135-138; BIBL. 13 REF.Article

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