ESR OF TEO₂-DOPED V₂O₅ SINGLE CRYSTALSBALLUTAUD D; R'KHA C; LIVAGE J et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 62; NO 1; PP. 293-298; ABS. GER; BIBL. 17 REF.Article

AN E.S.R. STUDY OF PARAMAGNETIC CENTERS IN ALPHA -VOPO₄ AND ALPHA -VOPO₄, 2H₂OBALLUTAUD D; BORDES E; COURTINE P et al.1982; MATER. RES. BULL.; ISSN 0025-5408; USA; DA. 1982; VOL. 17; NO 4; PP. 519-526; BIBL. 18 REF.Article

MICRODURETE DE MONOCRISTAUX DE V₂O₅LEJUS AM; BALLUTAUD D; R'KHA C et al.1980; MATER. RES. BULL.; ISSN 0025-5408; USA; DA. 1980; VOL. 15; NO 1; PP. 95-102; ABS. ENG; BIBL. 8 REF.Article

ESR OF P₂O₅-DOPED V₂O₅ SINGLE CRYSTALSBALLUTAUD D; R'KHA C; SANCHEZ C et al.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 66; NO 1; PP. 271-276; ABS. FRE; BIBL. 21 REF.Article

PARAMAGNETIC DEFECTS IN ALPHA -W_XV₂O₅LIVAGE J; CHAKIB R'KHA; BALLUTAUD D et al.1980; J. SOLID STATE CHEM.; GBR; DA. 1980; VOL. 33; NO 3; PP. 335-339; BIBL. 17 REF.Article

Electron spin resonance study of hydrogenation effects in polycrystalline siliconBALLUTAUD, D; AUCOUTURIER, M; BABONNEAU, F et al.Applied physics letters. 1986, Vol 49, Num 23, pp 1620-1622, issn 0003-6951Article

Copper precipitation at the silicon-silicon-dioxide interface : role of oxygenCORREIA, A; BALLUTAUD, D; MAURICE, J.-L et al.Japanese journal of applied physics. 1994, Vol 33, Num 3A, pp 1217-1222, issn 0021-4922, 1Article

A NEW VANADIUM PENTOXIDE AMORPHOUS PHASEGHARBI N; R'KHA C; BALLUTAUD D et al.1981; JOURNAL OF NON-CRYSTALLINE SOLIDS; ISSN 0022-3093; NLD; DA. 1981; VOL. 46; NO 3; PP. 247-257; BIBL. 14 REF.Article

Hydrogen diffusion and trapping in micro-nanocrystalline siliconLUSSON, L; ELKAIM, P; CORREIA, A et al.Journal de physique. III (Print). 1995, Vol 5, Num 8, pp 1173-1184, issn 1155-4320Article

Détermination par photoémission X du haut de la bande de valence dans l'alliage semi-conducteur Zn_xHg_(1-x)Te = X-ray photoemission determination of the valence band maximum in the Zn_xHg_(1-x)Te semiconductor alloyMARBEUF, A; BALLUTAUD, D; TRIBOULET, R et al.Comptes rendus de l'Académie des sciences. Série 2, Mécanique, Physique, Chimie, Sciences de l'univers, Sciences de la Terre. 1989, Vol 309, Num 10, pp 973-976, issn 0764-4450Article

Chemical characterization of the superficial layers of deuterium-implanted cadmium tellurideSVOB, L; BALLUTAUD, D; HAGE-ALI, H et al.Journal of materials science letters. 1988, Vol 7, Num 9, pp 949-951, issn 0261-8028Article

Effect of surface preparations on electrical and chemical surface properties of P-type siliconDE MIERRY, P; BALLUTAUD, D; AUCOUTURIER, M et al.Journal of the Electrochemical Society. 1990, Vol 137, Num 9, pp 2966-2973, issn 0013-4651, 8 p.Article

Comparison of the XPS spectra from homoepitaxial {111}, {100} and polycrystalline boron-doped diamond filmsGHODBANE, S; BALLUTAUD, D; OMNES, F et al.Diamond and related materials. 2010, Vol 19, Num 5-6, pp 630-636, issn 0925-9635, 7 p.Article

Microstructure, electrical properties and passivation of defects at the silicon-silicon-dioxide interfaceCORREIA, A; BALLUTAUD, D; MAURICE, J.-L et al.Journal of the Electrochemical Society. 1995, Vol 142, Num 3, pp 898-902, issn 0013-4651Article

Estimation of the silicon concentration by an optical way in polycrystalline CVD diamondRZEPKA, E; LAROCHE, J.-M; TEUKAM, Z et al.Physica status solidi. A. Applied research. 2004, Vol 201, Num 11, pp 2503-2508, issn 0031-8965, 6 p.Conference Paper

Optical investigations of the microstructure of carbon nitride films deposited by magnetron sputteringLEJEUNE, M; DURAND-DROUHIN, O; BALLUTAUD, D et al.Surface & coatings technology. 2002, Vol 151-52, pp 242-246, issn 0257-8972Conference Paper

Surface films on HgCdTe and CdTe etched in ferricyanide solutionERNE, B. H; LEFEVRE, F; LORANS, D et al.Applied surface science. 2001, Vol 175-76, pp 579-584, issn 0169-4332Conference Paper

A study of the influence of a hydrogenated carbon interlayer on the adhesion properties of plasma deposited silica thin films on polycarbonateHOFRICHTER, A; BULKIN, P; BALLUTAUD, D et al.Le Vide (1995). 2000, Vol 54, Num 296, pp 35-38, issn 1266-0167, SUP2-4Conference Paper

Electrochemical properties and surface modifications of GaInAs ternary alloys in aqueous solutionsETCHEBERRY, A; FOTOUHI, B; BALLUTAUD, D et al.Journal of the Electrochemical Society. 1991, Vol 138, Num 9, pp 2802-2807, issn 0013-4651Article

EXAFS and XPS studies of Hg_1-xZn_xTe: determination of local atomic structure and valence band maximumMARBEUF, A; BALLUTAUD, D; TRIBOULET, R et al.The Journal of physics and chemistry of solids. 1989, Vol 50, Num 9, pp 975-979, issn 0022-3697Article

Study of the composition of hydrogenated silicon nitride SiN_x:H for efficient surface and bulk passivation of siliconLELIEVRE, J.-F; FOURMOND, E; KAMINSKI, A et al.Solar energy materials and solar cells. 2009, Vol 93, Num 8, pp 1281-1289, issn 0927-0248, 9 p.Article

Hydrogen incorporation, bonding and stability in nanocrystalline diamond filmsBALLUTAUD, D; KOCINIEWSKI, T; VIGNERON, J et al.Diamond and related materials. 2008, Vol 17, Num 7-10, pp 1127-1131, issn 0925-9635, 5 p.Conference Paper

Sensitivity of Raman spectra excited at 325 nm to surface treatments of undoped polycrystalline diamond filmsGHODBANE, S; DENEUVILLE, A; TROMSON, D et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 10, pp 2397-2402, issn 1862-6300, 6 p.Article

Photoelectron spectroscopy of hydrogen at the polycrystalline diamond surfaceBALLUTAUD, D; SIMON, N; GIRARD, H et al.Diamond and related materials. 2006, Vol 15, Num 4-8, pp 716-719, issn 0925-9635, 4 p.Conference Paper

n-type CVD diamond doped with phosphorus using the MOCVD technology for dopant incorporationKOCINIEWSKI, T; BARJON, J; SAGUY, C et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 12, pp 3136-3141, issn 1862-6300, 6 p.Conference Paper