COHERENCE STUDY OF A CW ND: YAG LASER AND ITS SECOND-HARMONIC.HORI KI; BAMBA Y; FURUYA T et al.1974; FUJITSU SCI. TECH. J.; JAP.; DA. 1974; VOL. 10; NO 4; PP. 173-191; BIBL. 1 P. 1/2Article

FORMATION OF N-LAYER IN IN_0.53GA_0.47AS BY SI IMPLANTATIONKAWATA H; NISHI H; BAMBA Y et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 7; PP. 431-433; BIBL. 6 REF.Article

Sn ion doping during GaAs MBE with field ion gunBAMBA, Y; MIYAUCHI, E; KURAMOTO, K et al.Japanese journal of applied physics. 1983, Vol 22, Num 6, pp 331-332, issn 0021-4922Article

Reduced damage generation in GaAs implanted with focused Be ionsBAMBA, Y; MIYAUCHI, E; ARIMOTO, H et al.Japanese journal of applied physics. 1984, Vol 23, Num 7, pp L515-L517, issn 0021-4922Article

GaAs growth using an MBE system connected with a 100 kV UHV maskless ion implanterTAKAMORI, A; MIYAUCHI, E; ARIMOTO, H et al.Japanese journal of applied physics. 1984, Vol 23, Num 8, pp L599-L601, issn 0021-4922, 2Article

Focused Si ion implantation in GaAsBAMBA, Y; MIYAUCHI, E; ARIMOTO, H et al.Japanese journal of applied physics. 1983, Vol 22, Num 10, pp L650-L652, issn 0021-4922Article

Proposal and demonstration of multi-emitter HBTsIMAMURA, K; TAKATSU, M; MORI, T et al.Electronics Letters. 1994, Vol 30, Num 5, pp 459-460, issn 0013-5194Article

Si depth profiles in focused-ion-beam-implanted GaAsBAMBA, Y; MIYAUCHI, E; NAKAJIMA, M et al.Japanese journal of applied physics. 1985, Vol 24, Num 1, pp L6-L8, issn 0021-4922Article