THE BAND STRUCTURE OF MOLYBDENUM DISULPHIDE FROM THE ANGULAR VARIATION OF UV STIMULATED PHOTOELECTRIC EMISSIONWILLIAMS RH; THOMAS JM; BARBER M et al.1972; CHEM. PHYS. LETTERS; NETHERL.; DA. 1972; VOL. 17; NO 1; PP. 142-144; BIBL. 13 REF.Serial Issue

ON HOLE AND ELECTRON SCATTERING EFFECTS IN ENERGY BAND INVESTIGATIONS BY PHOTON-ENHANCED FIELD EMISSIONKORMENDI FF.1973; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1973; VOL. 34; NO 2; PP. 295-300; BIBL. 10 REF.Serial Issue

A LINEAR TWO-LAYER MODEL FOR FLAT-BAND SHIFT IN IRRADIATED MOS DEVICES.CHURCHILL JN; HOLMSTROM FE; COLLINS TW et al.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 4; PP. 291-296; BIBL. 8 REF.Article

EFFECT OF NONPARABOLIC ENERGY BANDS ON THE PROPAGATION OF ULTRASOUND IN N-INSB.SUTHERLAND FR; SPECTOR HN.1974; PHYS. REV., B; U.S.A.; DA. 1974; VOL. 10; NO 6; PP. 2507-2511; BIBL. 8 REF.Article

ELECTRONIC PROPERTIES OF GRADED HETEROJUNCTIONSROTH LM; BENNETT AJ.1972; PHYS. REV., B; U.S.A.; DA. 1972; VOL. 6; NO 6; PP. 2238-2245; BIBL. 10 REF.Serial Issue

THEORY OF THE ENERGY-BAND LINEUP AT AN ABRUPT SEMICONDUCTOR HETEROJUNCTION.FRENSLEY WR; KROEMER H.1977; PHYS. REV., B; U.S.A.; DA. 1977; VOL. 16; NO 6; PP. 2642-2652; BIBL. 34 REF.Article

INTERBAND-CURRENT THEORY FOR ESAKI DIODES.WUNSCHE HJ; HENNEBERGER K.1976; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1976; VOL. 73; NO 1; PP. 245-254; ABS. ALLEM.; BIBL. 19 REF.Article

SURFACE BAND BENDING EFFECTS ON PHOTOLUMINESCENCE INTENSITY IN N-INP SCHOTTKY AND MIS DIODESANDO K; YAMAMOTO A; YAMAGUCHI M et al.1981; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; NO 6; PP. 1107-1112; BIBL. 10 REF.Article

DETAILS OF THE EXTENDED LOW ENERGY STRUCTURE IN THE OXYGEN K EMISSION SPECTRUM FROM MGO AND CAO.LINKOAHO M; UTRIAINEN J; VALJAKKA J et al.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 19; NO 4; PP. 399-401; BIBL. 15 REF.Article

DETERMINATION DE LA STRUCTURE DES ETATS LOCAUX DE LA BANDE INTERDITE D'UN SEMICONDUCTEUR QUASIMONOPOLAIRE D'APRES LA CARACTERISTIQUE COURANT-TENSION A FAIBLE INJECTIONZYUGANOV AN; MALOVICHKO AV; SVECHNIKOV SV et al.1974; POLUPROVODN. TEKH. MIKROELKTRON., U.S.S.R.; S.S.S.R.; DA. 1974; NO 15; PP. 49-59; BIBL. 15 REF.Article

SELF-TRAPPED STATES OF AN ELECTRON IN A STRUCTURALLY DISORDERED SYSTEM.HERNANDEZ JP.1973; PHYS. REV., A; U.S.A.; DA. 1973; VOL. 7; NO 5; PP. 1755-1765; BIBL. 17 REF.Article

EFFECT OF BAND STRUCTURE ON THE VOLTAGE-CURRENT CHARACTERISTICS OF METAL-INSULATOR-METAL TUNNEL JUNCTIONSSARNOT SL; DUBEY PK.1972; SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 7; PP. 745-752; BIBL. 46 REF.Serial Issue

THE CAPACITANCES OF ANISO-TYPE HETEROJUNCTIONS WITH CONTINUOUSLY VARYING ENERGY BAND GAP AND ELECTRON AFFINITY IN THE TRANSITION REGIONHALIL B; KAO KC.1972; INTERNATION. F. ELECTRON.; G.B.; DA. 1972; VOL. 33; NO 1; PP. 33-47; BIBL. 11 REF.Serial Issue

ONE-DIMENSIONAL BAND CALCULATIONSKILLINGBECK J.1980; J. PHYS. A; GBR; DA. 1980; VOL. 13; NO 3; PP. L35-L37; BIBL. 4 REF.Article

THEORY OF EXTRINSIC AND INTRINSIC HETEROJUNCTIONS IN THERMAL EQUILIBRIUMVON ROSS O.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 10; PP. 1069-1075; BIBL. 22 REF.Article

PROPOSED ANTI-STOKES LIGHT CONVERTER WITH HETEROJUNCTIONSTAKAHASHI K.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 9; PP. 3895-3896; BIBL. 7 REF.Serial Issue

MEASUREMENT OF ISOTYPE HETEROJUNCTION BARRIERS BY C-V PROFILINGKROEMER H; WU YI CHIEN; HARRIS JS JR et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 4; PP. 295-297; BIBL. 6 REF.Article

AFGL TRACE GAS COMPILATION.ROTHMAN LS; CLOUGH SA; MCCLATCHEY RA et al.1978; APPL. OPT.; U.S.A.; DA. 1978; VOL. 17; NO 4; PP. 507; BIBL. 4 REF.Article

BAND-POPULATION INTERFERENCE PHENOMENA IN THE ELECTROREFLECTANCE OF NARROW-GAP SEMICONDUCTORS UNDER HEAVY SURFACE ACCUMULATION.BOTTKA N; JOHNSON DL; GLOSSER R et al.1977; PHYS. REV. B; U.S.A.; DA. 1977; VOL. 15; NO 4; PP. 2184-2194; BIBL. 22 REF.Article

A NOVEL VOLTAGE TUNEABLE INFRARED SPECTROMETER-DETECTOR.WHEELER RG; GOLDBERG HS.1975; J.E.E.E. TRANS. ELECTRON. DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 11; PP. 1001-1009; BIBL. 13 REF.Article

UNTERSUCHUNG VON HETEROSTRUKTUREN DER MISCHKRISTALLREIHE GAAS/ALAS MIT DEM RASTERELEKTRONENMIKROSKOP = ETUDE D'HETEROSTRUCTURES DE LA SERIE DES CRISTAUX MIXTES GAAS/ALAS AU ME A BALAYAGEJOHANSEN H; HERRMANN FP.1972; KRISTALL U. TECH.; DTSCH.; DA. 1972; VOL. 7; NO 10; PP. 1135-1141; ABS. ANGL.; BIBL. 4 REF.Serial Issue

RIGID BAND ANALYSIS OF HEAVILY DOPED SEMICONDUCTOR DEVICESMARSHAK AH; SHIBIB MA; FOSSUM JG et al.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 3; PP. 293-298; BIBL. 38 REF.Article

BAND-BENDING EFFECTS IN NA₂KSB AND K₂CSSB PHOTOCATHODES. = EFFETS DE COURBURE DE BANDE DANS DES PHOTOCATHODES A NA₂KSB ET A K₂CSSBFISHER DG; MCDONIE AF; SOMMER AH et al.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 1; PP. 487-488; BIBL. 8 REF.Article

ELECTRON MOBILITY IN HEAVILY DOPED GALLIUM ARSENIDESTEVENS EH; YEE SS.1973; J. APPL. PHYS.; U.S.A.; DA. 1973; VOL. 44; NO 2; PP. 715-722; BIBL. 25 REF.Serial Issue

Modèle de calculs des coefficients d'absorption théorique de la cellule solaire n-CdS/p-CdTe = Calculation models of theoretical absorption coefficients of the solar cell n-CdS/p-CdTeNIASSE, O. A; MBENGUE, B; BA, B et al.Revue des énergies renouvelables. 2010, Vol 13, Num 2, pp 213-222, issn 1112-2242, 10 p.Article