kw.\*:("BARITT DIODE")
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OPTIMUM BARITT STRUCTURELURYI S; KAZARINOV RF.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 9; PP. 943-945; BIBL. 8 REF.Article
PROFIL DE DOPAGE OPTIMAL D'UNE DIODE DE TRANSIT A INJECTION (DIODE BARITT)PAVLOV GP.1981; IZV. VYSS. UCEBN. ZAVED., RADIOELEKTRON.; ISSN 0021-3470; SUN; DA. 1981; VOL. 24; NO 7; PP. 64-68; BIBL. 5 REF.Article
CONVERSION GAIN OF SELF-OSCILLATING BARITT-DIODE MIXERSHARTH W.1980; AEU, ARCH. ELEKTRON. UEBERTRAGUNGSTECH.; ISSN 0001-1096; DEU; DA. 1980; VOL. 34; NO 10; PP. 426-428; ABS. GER; BIBL. 8 REF.Article
BARITT DIODES FOR KA-BAND FREQUENCIESFREYER J; FOERG PN.1980; I.E.E. PROC., I; GBR; DA. 1980; VOL. 127; NO 2; PP. 78-80; BIBL. 14 REF.Article
LOW-TEMPERATURE CHARACTERISTICS OF A BARITT DIODE.KAWAMURA M; SHIBATA K; YOSHIDA K et al.1978; INTERNATION. J. ELECTRON.; GBR; DA. 1978; VOL. 44; NO 1; PP. 105-110; BIBL. 11 REF.Article
TRANSIT-TIME DEVICE DESIGN USING INSTABILITY CRITERIAVAYA PR; DATTATREYAN C.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 69; NO 2; PP. K167-K171; BIBL. 9 REF.Article
FABRICATION AND CHARACTERISTICS OF MICROWAVE BARITT DIODES.MONTRESS GK; GUPTA MS.1976; MASSACHUSETTS INST. TECHNOL., R.L.E. PROGR. REP.; U.S.A.; DA. 1976; NO 118; PP. 37-40; BIBL. 1 REF.Article
CHARACTERIZE BARITTS BY ANALYZING I-V CURVES.AHMAD S.1978; MICROWAVES; USA; DA. 1978; VOL. 17; NO 7; PP. 62-64; BIBL. 3 REF.Article
THE BARITT DIODE. A NEW COMER TO THE FAMILY.DE COGAN D.1977; PHYS. IN TECHNOL.; G.B.; DA. 1977; VOL. 8; NO 1; PP. 18-21; BIBL. 1 REF.Article
A TECHNIQUE FOR FABRICATING OXIDE PASSIVATED BARITT DIODES.ARMSTRONG BM; MOORE RA; GAMBLE HS et al.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 9; PP. 1462-1463; BIBL. 3 REF.Article
OPTICAL INJECTION LOCKING OF BARITT OSCILLATORSHEIDEMANN R; JAEGER D.1983; IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES; ISSN 0018-9480; USA; DA. 1983; VOL. 31; NO 1; PP. 78-79; BIBL. 5 REF.Article
ON THE BOUNDARY CONDITIONS OF SCHOTTKY-BARRIER BARITT DEVICESEL GABALY M.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 1; PP. 503-507; BIBL. 23 REF.Article
MEASUREMENT OF HEAT-FLOW RESISTANCE IN BARITT DIODES.FREYER J; AHMAD S.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 20; PP. 527-528; BIBL. 3 REF.Article
MICROWAVE AND MM WAVE BARITT DOPPLER DETECTORS. = DETECTEURS DOPPLER UTILISANT DES DIODES BARITT POUR APPLICATIONS EN MICROONDE ET EN ONDES MILLIMETRIQUESEAST JR; NGUYEN BA H; HADDAD GI et al.1976; MICROWAVE J.; U.S.A.; DA. 1976; VOL. 19; NO 11; PP. 51-55 (4P.); BIBL. 6 REF.Article
SUR LES FLUCTUATIONS TECHNIQUES DANS UN GENERATEUR A DIODE DE TRANSIT A INJECTIONZAJTSEV VV; ORLOV VB; YAKIMOV AV et al.1980; IZVEST. VYSSH. UCHELN. ZAVED., RADIOFIZ.; SUN; DA. 1980; VOL. 23; NO 5; PP. 585-593; ABS. ENG; BIBL. 10 REF.Article
THE INFLUENCE OF CAPTURE OF THE INJECTED CURRENT CARRIERS ON THE CHARACTERISTICS OF BARITT DIODES.HARUTUNIAN VM; BUNIATIAN VV.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 6; PP. 491-497; BIBL. 30 REF.Article
THE SCHOTTKY EFFECT IN PUNCH-THROUGH DIODES.VAN DE ROER TG.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 9; PP. 3835-3837; BIBL. 8 REF.Article
HIGH-POWER PT SCHOTTKY BARITT DIODES.AHMAD S; FREYER J.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 10; PP. 238-239; BIBL. 6 REF.Article
TEMPERATURE DEPENDENT BARRIER INJECTION IN TRANSIT TIME DEVICES: STEADY STATEMUSTAFA M; AHMAD S.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 9; PP. 6236-6239; BIBL. 15 REF.Article
THE INTERNAL DYNAMICS AND SMALL SIGNAL ANALYSIS OF BARITT DIODESRAZOUK RR; GUNSHOR RL; RAZOUK LR et al.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 12; PP. 1011-1015; BIBL. 10 REF.Article
SMALL SIGNAL ANALYSIS AND OPTIMIZATION OF THE BARITT DIODE.YU SY; THOMAS G.1977; SOLID STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 10; PP. 831-837; BIBL. 9 REF.Article
NUMERICAL COMPARISON OF SILICON PNP AND PNVP BARITT DIODES.KARASEK M.1976; ACTA TECH. C.S.A.V.; CESKOSL.; DA. 1976; VOL. 21; NO 4; PP. 366-386; BIBL. 16 REF.Article
EFFECTS OF DOPING PROFILE ON THE PERFORMANCE OF BARITT DEVICES.HIEN NGUYENBA; HADDAD GI.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 9; PP. 1154-1163; BIBL. 9 REF.Article
POWER LIMITATIONS IN BARITT DEVICES.KWOK SP; HADDAD GI.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 9; PP. 795-807; BIBL. 19 REF.Article
HIGHER OUTPUT POWER FROM BARITT DIODES USING ION IMPLANTATIONARMSTRONG BM; MOORE RA; WAKEFIELD J et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 5; PP. 153-155; BIBL. 2 REF.Article