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Rutherford backscattering analysis of thin films and superlattices with roughnessBARRADAS, N. P.Journal of physics. D, Applied physics (Print). 2001, Vol 34, Num 14, pp 2109-2116, issn 0022-3727Article

Simulated annealing analysis of nuclear reaction analysis measurements of polystyrene systemsBARRADAS, N. P; SMITH, R.Journal of physics. D, Applied physics (Print). 1999, Vol 32, Num 22, pp 2964-2971, issn 0022-3727Article

Accurate Determination of Quantity of Material in Thin Films by Rutherford Backscattering SpectrometryJEYNES, C; BARRADAS, N. P; SZILAGYI, E et al.Analytical chemistry (Washington). 2012, Vol 84, Num 14, pp 6061-6069, issn 0003-2700, 9 p.Article

Accurate calculation of pileup effects in PIXE spectra from first principlesBARRADAS, N. P; REIS, M. A.X-ray spectrometry. 2006, Vol 35, Num 4, pp 232-237, issn 0049-8246, 6 p.Article

Error performance analysis of artificial neural networks applied to Rutherford backscatteringVIEIRA, A; BARRADAS, N. P; JEYNES, C et al.Surface and interface analysis. 2001, Vol 31, Num 1, pp 35-38, issn 0142-2421Article

Surface composition and morphology changes of JET tiles under plasma interactionsALVES, L. C; ALVES, E; CONTRIBUTORS, Jet-Efda et al.Fusion engineering and design. 2011, Vol 86, Num 9-11, pp 2557-2560, issn 0920-3796, 4 p.Conference Paper

Functional and optical properties of Au:TiO2 nanocomposite films: The influence of thermal annealingTORRELL, M; CUNHA, L; CAVALEIRO, A et al.Applied surface science. 2010, Vol 256, Num 22, pp 6536-6542, issn 0169-4332, 7 p.Article

Structural and optical characterization of Eu-implanted GaNLORENZ, K; BARRADAS, N. P; ALVES, E et al.Journal of physics. D, Applied physics (Print). 2009, Vol 42, Num 16, issn 0022-3727, 165103.1-165103.11Article

Charging effects in CdSe nanocrystals embedded in SiO2 matrix produced by rf magnetron sputteringLEVICHEV, S; CHAHBOUN, A; BASA, P et al.Microelectronic engineering. 2008, Vol 85, Num 12, pp 2374-2377, issn 0167-9317, 4 p.Conference Paper

Annealing properties of ZnO films grown using diethyl zinc and tertiary butanolWANG, J. Z; PERES, M; SOARES, J et al.Journal of physics. Condensed matter (Print). 2005, Vol 17, Num 10, pp 1719-1724, issn 0953-8984, 6 p.Article

Influence of RF-sputtering power on formation of vertically stacked Si1―xGex nanocrystals between ultra-thin amorphous Al2O3 layers: structural and photoluminescence propertiesVIEIRA, E. M. F; MARTIN-SANCHEZ, J; PENNYCOOK, S. J et al.Journal of physics. D, Applied physics (Print). 2013, Vol 46, Num 38, issn 0022-3727, 385301.1-385301.10Article

TiAgx thin films for lower limb prosthesis pressure sensors: Effect of composition and structural changes on the electrical and thermal response of the filmsLOPES, C; GONCALVES, C; PEDROSA, P et al.Applied surface science. 2013, Vol 285, pp 10-18, issn 0169-4332, 9 p., aConference Paper

PIXE analysis of multilayer targetsREIS, M. A; BARRADAS, N. P; CHAVES, P. C et al.X-ray spectrometry. 2011, Vol 40, Num 3, pp 153-156, issn 0049-8246, 4 p.Article

Al1-xlnxN/GaN bilayers: Structure, morphology, and optical propertiesLORENZ, K; MAGALHAES, S; O'DONNELL, K. P et al.Physica status solidi. B. Basic research. 2010, Vol 247, Num 7, pp 1740-1746, issn 0370-1972, 7 p.Conference Paper

Formation of AlxGa1-xsb films over GaSb substrates by Al diffusionRUIZ, C. M; BARRADAS, N. P; ALVES, E et al.EPJ. Applied physics (Print). 2004, Vol 27, Num 1-3, pp 423-426, issn 1286-0042, 4 p.Conference Paper

Elemental thin film depth profiles by ion beam analysis using simulated annealing: a new toolJEYNES, C; BARRADAS, N. P; MARRIOTT, P. K et al.Journal of physics. D, Applied physics (Print). 2003, Vol 36, Num 7, pp R97-R126, issn 0022-3727Article

Advanced data analysis techniques for ion beam analysisBARRADAS, N. P.Surface and interface analysis. 2003, Vol 35, Num 9, pp 760-769, issn 0142-2421, 10 p.Conference Paper

The influence of in situ photoexcitation on a defect structure generation in Ar+ implanted GaAs(001) crystals revealed by high-resolution x-ray diffraction and Rutherford backscattering spectroscopyCHTCHERBATCHEV, K. D; BUBLIK, V. T; MARKEVICH, A. S et al.Journal of physics. D, Applied physics (Print). 2003, Vol 36, Num 10A, pp A143-A147, issn 0022-3727Conference Paper

Magnetic anisotropy and temperature dependence of the hyperfine fields of 111Cd in single-crystalline cobaltBARRADAS, N. P; ROTS, M; MELO, A. A et al.Physical review. B, Condensed matter. 1993, Vol 47, Num 14, pp 8763-8768, issn 0163-1829Article

Preparation and characterization of CrNxOy thin films: The effect of composition and structural features on the electrical behaviorARVINTE, R; BORGES, J; SOUSA, R. E et al.Applied surface science. 2011, Vol 257, Num 21, pp 9120-9124, issn 0169-4332, 5 p.Article

Hydrogenic retention of high-Z refractory metals exposed to ITER divertor-relevant plasma conditionsWRIGHT, G. M; ALVES, E; ALVES, L. C et al.Nuclear fusion. 2010, Vol 50, Num 5, issn 0029-5515, 055004.1-055004.9Article

Multilayers of Ge nanocrystals embedded in Al2O3 matrix: Structural and electrical studiesPINTO, S. R. C; ROLO, A. G; GOMES, M. J. M et al.Microelectronic engineering. 2010, Vol 87, Num 12, pp 2508-2512, issn 0167-9317, 5 p.Article

Structural study of Si1-xGex nanocrystals embedded in SiO2 filmsPINTO, S. R. C; KASHTIBAN, R. J; ROLO, A. G et al.Thin solid films. 2010, Vol 518, Num 9, pp 2569-2572, issn 0040-6090, 4 p.Conference Paper

Annealing Ni nanocrystalline on WC―CoFERNANDES, C. M; GUISBIERS, G; PEREIRA, S et al.Journal of alloys and compounds. 2009, Vol 482, Num 1-2, pp 131-136, issn 0925-8388, 6 p.Article

Growth of GaInSb concentrated alloys under alternating magnetic fieldMITRIC, A; DUFFAR, T; CORREGIDOR, V et al.Journal of crystal growth. 2008, Vol 310, Num 7-9, pp 1424-1432, issn 0022-0248, 9 p.Article

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