THE ACCURACY OF SCHOTTKY-BARRIER-HEIGHT MEASUREMENTS ON CLEAN-CLEAVED SILICON.VAN OTTERLOO JD; GERRITSEN LJ.1978; J. APPL. PHYS.; U.S.A.; DA. 1978; VOL. 49; NO 2; PP. 723-729; BIBL. 21 REF.Article

OPTIMUM BARRIER HEIGHT FOR SCHOTTKY-BARRIER DETECTORSSHOUSHA AHM.1982; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1982; VOL. 15; NO 4; PP. 669-675; BIBL. 7 REF.Article

MECHANISM FOR INJECTING CONTACT FORMATION AT METAL-CDS OR CDSE INTERFACESFREEMAN EC; SLOWIK JH.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 1; PP. 96-98; BIBL. 26 REF.Article

THE BIAS-DEPENDENT PHOTOELECTRIC BARRIER HEIGHT OF THE SCHOTTKY DIODESCHING YUAN WU.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 4; PP. 2909-2912; BIBL. 5 REF.Article

SCHOTTKY BARRIERS AT THE INTERFACE BETWEEN AMORPHOUS SILICON AND ELECTROLYTESWILLIAMS R.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 4; PP. 2848-2851; BIBL. 13 REF.Article

ON THE PINHOLE MODEL FOR MIS DIODESFONASH SJ; ASHOK S.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 11; PP. 1075-1076; BIBL. 19 REF.Article

ARE INTERFACE STATES CONSISTENT WITH SCHOTTKY BARRIER MEASUREMENTS.FREEOUF JL.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 3; PP. 285-287; BIBL. 15 REF.Article

NEW FERMI ENERGY PINNING BEHAVIOR OF AU ON GAAS (110) SUGGESTING INCREASED SCHOTTKY-BARRIER HEIGHTS ON N-TYPE GAASSKEATH P; SU CY; HINO I et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 4; PP. 349-351; BIBL. 15 REF.Article

SCHOTTKY BARRIERS ON COMPOUND SEMICONDUCTORS: THE ROLE OF THE ANION.MCCALDIN JO; MCGILL TC; MEAD CA et al.1976; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1976; VOL. 13; NO 4; PP. 802-806; BIBL. 18 REF.; (PHYS. COMPD. SEMICOND. INTERFACES. ANNU. CONF. 3. PROC.; SAN DIEGO, CALIF.; 1976)Conference Paper

INP SCHOTTKY CONTACTS WITH INCREASED BARRIER HEIGHTWADA O; MAJERFELD A; ROBSON PN et al.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 5; PP. 381-387; BIBL. 37 REF.Article

ON THE RESONANT BROADENING OF THE TRAP ASSISTED TUNNELING IN MIM STRUCTURESAYMERICH HUMET X; SERRA MESTRES F; MILLAN J et al.1981; PHYS. STATUS SOLIDI(A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 67; NO 2; PP. 597-602; ABS. FRE; BIBL. 15 REF.Article

OPTIMUM BUILT-IN-BARRIER HEIGHT UTILIZING AN EXTENDED CONCEPT OF IMPEDANCE MATCHINGKAJIYAMA K; MIZUSHIMA Y.1978; PROC. I.E.E.E.; USA; DA. 1978; VOL. 66; NO 5; PP. 598-599; BIBL. 4 REF.Article

SCHOTTKY BARRIER HEIGHT MEASUREMENT BY ELECTRON-BEAM INDUCED VOLTAGEHUANG HCW; ALIOTTA CF; HO PS et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 1; PP. 54-56; BIBL. 10 REF.Article

ANNEALING EFFECTS IN TUNNEL JUNCTIONS (VOLTAGE ANNEALING WITH ALTERNATING POLARITY)KONKIN MK; ADLER JG.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 7; PP. 5057-5060; BIBL. 9 REF.Article

BARRIER HEIGHT FOR COHALT ON SILICONHASHIMOTO K.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 71; NO 2; PP. K201-K203; BIBL. 5 REF.Article

BARRIER HEIGHTS AND SILICIDE FORMATION FOR NI, PD AND PT ON SILICONOTTAVIANI G; TU KN; MAYER JW et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 6; PP. 3354-3359; BIBL. 28 REF.Article

MICROSTRUCTURE AND SCHOTTKY BARRIER HEIGHT OF IRIDIUM SILICIDES FORMED ON SILICONOHDOMARI I; KUAN TS; TU KN et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 11 PART. 1; PP. 7020-7029; BIBL. 19 REF.Article

SCHOTTKY BARRIER HEIGHT CONTROL BY USING KNOCK-ON EFFECT IN ION IMPLANTATION.ISHIWARA H; FURUKAWA S.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 53-56; BIBL. 8 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

THE METAL-OVERLAP LATERALLY-DIFFUSED (MOLD) SCHOTTKY DIODE.RUSU A; BULUCEA C; POSTOLACHE C et al.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 6; PP. 499-506; H.T. 1; BIBL. 29 REF.Article

POLYPYRROLE-SEMICONDUCTOR SCHOTTKY BARRIERSINGANAES O; SKOTHEIM T; LUNDSTROEM I et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 6; PP. 3636-3639; BIBL. 14 REF.Article

HGTE/CDTE HETEROJUNCTIONS: A LATTICE-MATCHED SCHOTTKY BARRIER STRUCTUREKUECH TF; MCCALDIN JO.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 4; PP. 3121-3128; BIBL. 28 REF.Article

SCHOTTKY CONTACTS ON CHEMICALLY ETCHED P- AND N-TYPE INDIUM PHOSPHIDEHOEKELEK E; ROBINSON GY.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 5; PP. 426-428; BIBL. 21 REF.Article

INFLUENCE D'UN CHAMP ELECTRIQUE SUR LE PHOTOCOURANT PRODUIT PAR L'EMISSION D'ELECTRONS DU METAL DANS LE SEMICONDUCTEUR, DANS LES STRUCTURES AU-GAPGOL'DBERG YU A; KONSTANTINOV OV; L'VOVA TV et al.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 9; PP. 1529-1533; BIBL. 9 REF.Article

BARRIER HEIGHT STUDY ON AU-INP SCHOTTKY DIODES.HESS JM; NGUYEN PH; LEPLEY B et al.1978; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1978; VOL. 46; NO 1; PP. K55-K59; BIBL. 15 REF.Article

SURFACE STATES AND BARRIER HEIGHT AT METAL-GAAS INTERFACE.TYAGI MS.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 333-336; BIBL. 11 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper