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Results 1 to 25 of 3489

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THE POTENTIAL BARRIER LIMITED CURRENT IN SELENIUMSINKKONEN J; STUBB T.1973; SOC. SCI. FENN., COMMENT. PHYS.-MATH.; FINL.; DA. 1973; VOL. 43; NO 1; PP. 41-64; BIBL. 16 REF.Serial Issue

BACKSCATTERING OF 137CS GAMMA RAYS BY FINITE BARRIERSELIAS E; SEGAL Y; NOTEA A et al.1973; J. NUCL. ENERGY; G.B.; DA. 1973; VOL. 27; NO 5; PP. 351-362; H.T. 1; BIBL. 36 REF.Serial Issue

EFFECT OF THE DEFORMATION-DEPENDENT INERTIAL PARAMETER ON THE PENETRATION OF THE DOUBLE POTENTIAL BARRIER IN FISSIONING NUCLEIDUDEK J.1972; NUCL. PHYS., A; NETHERL.; DA. 1972; VOL. 194; NO 3; PP. 552-560; BIBL. 13 REF.Serial Issue

QUANTUM-MECHANICAL SYSTEMS RESTRICTED BY IMPENETRABLE BARRIERS STUDIED BY A PERTURBATION METHOD.GONDA I; GRAY BF.1975; J. CHEM. SOC., FARADAY TRANS., 2; G.B.; DA. 1975; VOL. 71; NO 12; PP. 2016-2024; BIBL. 31 REF.Article

THEORY OF POTENTIAL-BARRIER HOPPING IN HARMONIC SOLIDS.BRAWER S.1974; PHYS. REV., B; U.S.A.; DA. 1974; VOL. 10; NO 8; PP. 3287-3301; BIBL. 15 REF.Article

COMPORTEMENT ASYMPTOTIQUE DE LA DECOMPOSITION DES NIVEAUX D'UNE BARRIERE DE POTENTIEL DE FORME COMPLEXEDAMBURG R YA; PROPIN R KH.1974; LATV. P.S.R. ZINAT. AKAD. VEST., FIZ. TEH. ZINAT. SER.; S.S.S.R.; DA. 1974; NO 3; PP. 12-16; ABS. ANGL.; BIBL. 3 REF.Article

DISTRIBUTION ANGULAIRE DES ELECTRONS DANS LE PLASMA POUR UNE BARRIERE DE POTENTIEL RETARDATEUR PRES DU COLLECTEURBAKSHT FG; IVANOV VG; MOJZHES B YA et al.1972; ZH. TEKH. FIZ.; S.S.S.R.; DA. 1972; VOL. 42; NO 5; PP. 921-924; BIBL. 6 REF.Serial Issue

CLASSICAL ASPECTS OF BARRIER PENETRATION.CHILD MS.1976; MOLEC. PHYS.; G.B.; DA. 1976; VOL. 31; NO 4; PP. 1031-1036; BIBL. 10 REF.Article

PREPARATION DE STRUCTURES A BARRIERE DE SURFACE AU TELLURURE DE CADMIUM DE TYPE PUKRAINETS VE; SHNEJDER AD.1975; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1975; NO 2; PP. 222-224; BIBL. 12 REF.Article

THE INFLUENCE OF SODIUM ON THE SI-SIO2 INTERFACE.DI STEFANO TH; LEWIS JE.1974; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1974; VOL. 11; NO 6; PP. 1020-1024; BIBL. 19 REF.; (SYMP. ELECTRON. STRUCT. PROP. INTERFACES. PROC.; PRINCETON, N.J.; 1973)Conference Paper

OBSERVATIONS OF CHARGING DYNAMICSOLSEN RC; PURVIS CK.1983; JOURNAL OF GEOPHYSICAL RESEARCH; ISSN 0022-1406; USA; DA. 1983; VOL. 88; NO A7; PP. 5657-5667; BIBL. 18 REF.Article

ROLE OF SURFACE BAND BENDING IN RESIDUAL CONDUCTIVITY FORMATION IN EPITAXIAL GAAS FILMS.SITENKO TN; TYAGULSKII IP; LYASHENKO VI et al.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 30; NO 2; PP. 755-763; ABS. RUSSE; BIBL. 17 REF.Article

TRANSMISSION THROUGH A REAL ECKART-EPSTEIN POTENTIAL BARRIER TREATED BY MEANS OF CERTAIN PHASE-INTEGRAL APPROXIMATIONS.KARLSSON F.1975; PHYS. REV., D; U.S.A.; DA. 1975; VOL. 11; NO 8; PP. 2120-2123; BIBL. 10 REF.Article

EXACT AND APPROXIMATE METHODS FOR THE INVESTIGATION OF THE PROPAGATION OF WAVES THROUGH A SYSTEM OF BARRIERSHEADING J.1973; PROC. CAMBRIDGE PHILOS. SCI.; G.B.; DA. 1973; VOL. 74; NO 1; PP. 161-178; BIBL. 18 REF.Serial Issue

SUR LA BARRIERE DE REDRESSEMENT DANS LES DIODES SCHOTTKY A L'ARSENIURE DE GALLIUMSEJRANYAN GB; TKHORIK YU A.1973; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1973; NO 12; PP. 79-85; BIBL. 21 REF.Serial Issue

GRAIN BOUNDARY SPACE REGION POTENTIAL BARRIER IN POLYCRYSTALLINE SEMICONDUCTORSSINGAL CM; PRASAD B.1983; INTERNATIONAL JOURNAL OF ELECTRONICS THEORETICAL & EXPERIMENTAL; ISSN 0020-7217; GBR; DA. 1983; VOL. 54; NO 2; PP. 221-245; BIBL. 15 REF.Article

BARRIER HEIGHT ENHANCEMENT OF THE SCHOTTKY BARRIER DIODE USING A THIN UNIFORMLY-DOPED SURFACE LAYERCHING YUAN WU.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 9; PP. 857-862; BIBL. 13 REF.Article

AN EVALUATION OF SUBMICROMETER POTENTIAL BARRIERS USING CHARGE-TRANSFER DEVICESTAYLOR GW; CHATTERJEE PK.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 644-650; BIBL. 6 REF.Article

PHOTOCONDUCTIVITE NEGATIVE ET PHOTOMEMOIRE CAUSEES PAR LA BARRIERE DE POTENTIEL A LA SURFACE DE INASBALAGUROV LA; OMEL'YANOVSKIJ EH M; FISTUL VI et al.1978; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1978; VOL. 12; NO 5; PP. 944-947; BIBL. 18 REF.Article

ANALYTIC CALCULATION OF METAL SURFACE DIPOLE MOMENTS IN THE STEP-POTENTIAL APPROXIMATIONSAHNI V; KRIEGER JB; GRUENEBAUM J et al.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 12; NO 8; PP. 3503-3508; BIBL. 22 REF.Article

PHENOMENOLOGY OF METAL-SEMICONDUCTOR ELECTRICAL BARRIERS.MCGILL TC.1974; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1974; VOL. 11; NO 6; PP. 935-942; BIBL. 22 REF.; (SYMP. ELECTRON. STRUCT. PROP. INTERFACES. PROC.; PRINCETON, N.J.; 1973)Conference Paper

ON THE POTENTIAL BARRIER OF SCHOTTKY JUNCTIONSKLOSE H.1972; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1972; VOL. 14; NO 2; PP. 457-462; ABS. ALLEM.; BIBL. 15 REF.Serial Issue

ROLE DE LA "FORMATION" PAR FLUCTUATIONS DE LA BARRIERE DANS LA DIFFUSION QUANTIQUE DES PARTICULES ATOMIQUES DANS UN CRISTALKAGAN YU; KLINGER MI.1976; ZH. EKSPER, TEOR. FIZ.; S.S.S.R.; DA. 1976; VOL. 70; NO 1; PP. 255-264; ABS. ANGL.; BIBL. 10 REF.Article

UNIPOLAR CURRENT TRANSPORT THROUGH METAL-INSULATOR-METAL (MIM) STRUCTURES, SUPPLIED WITH BARRIER CONTACTS, IN THE DIFFUSION LIMIT.CISNEROS G; MARK P.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 6; PP. 563-568; BIBL. 11 REF.Article

HIGH-ORDER CALCULATION OF TRANSMISSION ABOVE THE POTENTIAL BARRIER.WALD SS; LU P.1974; PHYS. REV., D; U.S.A.; DA. 1974; VOL. 9; NO 4; PP. 895-898; BIBL. 5 REF.Article

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